GG3D Search Results

STF8045DV

Abstract: STF8045DF
Contextual Info: 3DE D • T'iS'iea? GG3DS1Ô 1 SCS-THOMSON ^ ^ 2.5 IILIim «! STF8045DF STF8045DV S G S-THOMSON NPN DARLINGTON POWER MODULE . . . . ■ . ■ ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL

ESM2012DV

Contextual Info: 3QE D • 7 ^2 3 7 GG3DM2D 3 SGS-THOMSON S ESM2012DF ESM2012DV G S - THOMS ON " y / 3 3 ./a, 5 " NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE

ZENER B89

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only APPLICATIONS • LESS THAN ±1% TOTAL ADJUSTED ERROR, -40°C TO +85°C • INDUSTRIAL PROCESS CONTROL • BRIDGE EXCITATION AND LINEARIZATION • SCADA • WIDE SUPPLY RANGE: 9V to 40V • WEIGHTING SYSTEMS

BTI ML-1 94V-0

Abstract: 94V-0 BTI ML-1 BTI ML-2 94V-0
Contextual Info: I . I Bulletin 127093 rev. A 09/97 International ir k .f i 52. s e r ie s iQRRectifier FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features 150 A • F a st tu rn -o ff th y ris to r ■ Fa st re c o v e ry dio d e ■ H ig h su rge c a p a b ility

Contextual Info: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

gg3d

Contextual Info: Data Sheet SINGLEGENERAL DUAL LOW VOLTAGE PURPOSE RAIL-TO-RAIL LOW VOLTAGE OUTPUT OPERATIONAL COMPARATOR AMPLIFIER General Description Features The AZV393 is a low voltage 2.5V to 5.5V, dual comparator, which has a very low supply current of 100µA, making the part an excellent choice for portable electronic systems. The device is pin-for-pin compatible

Contextual Info: MITSUBISHI LS Is <DRAM MODULE MH4M40CJ-5,-6,-7/ MH4M40CNJ-5,-6,-7 FAST PAGE MODE 167772160-BIT 4194304-WQRD BY 40-BIT) DYNAMIC RAM DESCRIPTION The MH4M40CJ/CNJ is 4194304-word by 40-bit dynamic RAM module. That module consists o f 10 industry 4M x 4 dynamic RAMs in SOJ.

skip+32+NAC+12+T3

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH2M36CXJ-6,-7/ MH2M36CNXJ-6,-7 FAST PAGE MODE 75497472-BIT (2097152-WORD BY 36-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Double side] The MH2M36CXJ/CNXJ is 2097152-word x 36-bit dynamic RAM. This consists of four industry standard

LR7189

Abstract: 2.54x5.08 CONNECTOR
Contextual Info: / -tn Card Edge Connectors Board-to-Board, Wire-to-Board) AIWIF» Catalog 82619 R e vis e d 8 -9 6 A M P Pace Connectors Performance Specifications AMP PACE Connectors Electrical Characteristics Contact Resistance: ACTION PIN Contact Interface— 5 m illioh m

ds3655

Contextual Info: A Product Line of Diodes Incorporated AZV393 DUAL GENERAL PURPOSE LOW VOLTAGE COMPARATOR Description Pin Assignments The AZV393 is a low voltage 2.5V to 5.5V, dual comparator, which has a very low supply current of 100µA, making the part an excellent choice for portable electronic systems. The device is pin-for-pin

Contextual Info: M7E D • «E3Sb05 0D3Db70 □ »SIEG SAB 8088 SIEMENS AKTIENGESELLSCHAF 8-Bit Microprocessor “ Preliminary SAB 8088 5 MHz SAB 8088-2 8 MHz SAB 8088-1 • 8-bit data bus interface • 16-bit internal architecture • Direct addressing capability to 1 M byte o f m em ory

XMP 820

Abstract: C1204B 3Q55
Contextual Info: KM416C1004BJ ELECTRONICS CMOS D R A M 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: KM416C1004BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

bur brown 700

Contextual Info: Or, Call Customer Service at W I I ‘548-6132 USA Only B U R R -B R O W N | b b OPA62Q j Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • LOW NOISE: 2.3nV/VHz HIGH OUTPUT CURRENT: 100mA

Contextual Info: MITSUBISHI ME M O R Y CARD STA TIC R A M CARDS MF3128 M L D A P X X 8-b it Data Bus M F3256- M L D A P X X Static R A M C ard M F3512-M LD A P X X Connector Ty pe Two-piece 60-pin DESCRIPTION 160-pin connector M its u b is h i's sta tic R A M cards provide large

AZV393M-G1

Abstract: AZV393 AZV393M-E1 AZV393MTR-E1 LMV393 gg3d
Contextual Info: Product Brief VOLTAGE DUAL GENERAL DETECTOR PURPOSE LOW VOLTAGE COMPARATOR Description AZ70XX AZV393 Parametric Table VCC=5V, typical, unless otherwise specified The AZV393 a lowICs voltage 2.5V voltage to 5.5V,detectors dual comparAZ70XXisseries are under

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N | B B INA103 | i i I INA103 Low Noise, Low Distortion INSTRUMENTATION AMPLIFIER APPLICATIONS • LOW NOISE: 1nV/VHz • LOW THD+N: 0.0009% at 1kHz, G = 100 • HIGH QUALITY MICROPHONE PREAMPS

BUK456

Abstract: C055 T0220AB 7ts transistor
Contextual Info: N AflER P H I L I P S / D I S C R E T E b^E D • hbS3=J31 003Qb6S DST » A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUF298F

Abstract: BUF298V 3641B
Contextual Info: 3QE rz 7 ^ 7# D • QÜ3D33Ô 7 S C S -T H O M S O N K œ iL lû lM K S s G S TH0MS0N 3 U F 2 9 8 F BUF298V 'T -'S s^S NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ISOLATED CASE 2500V RMS

Contextual Info: f PRELIMINARY CYPRESS C Y 7 C 92 4D X 200 MBaud HOTLink Transceiver Features Second generation HOTLink™ technology Fibre Channel and ESC O N com pliant 8B /10B encoder/decoder 10- or 12-bit pre-encoded data path raw m ode 8- o r 10-bit encoded data transport (using 8B/10B

Contextual Info: GEC P L E S S E Y S E M I C O N D U C T O R S M DS4145-3.3 DFS454 FAST RECOVERY DIODE KEY PARAMETERS vV RRM 2500V 365A ¡F AV 3500A u 200|xC Q, 2.0ns APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification.

Contextual Info: PRELIMINARY W48S87-04 Tg C Y P R E S S Spread Spectrum 3 DIMM Desktop Clock Key Specifications Features Outputs — 4 CPU Clock 2.5V or 3.3V, 50 to 83.3 M Hz — 7 PCI (3.3V) — 1 48-M H z for USB (3.3V) ±0.5% Spread Spectrum M o d u la tio n :. . ±0.5%

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only BURR- BROW Nt E OPA124 1 % FEATURES APPLICATIONS • • • • • • • • • • • LOW NOISE: 6nV/Vflz (10kHz) LOW BIAS CURRENT: 1pA max LOW OFFSET: 250|xV max LOW DRIFT: 2jiV/°C max HIGH OPEN-LOOP GAIN: 120dB min

Contextual Info: TOSHIBA TC74VHCT00AF/AFN/AFT TOSHIBA CMO S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT00AF, TC74VHCT00AFN, TC74VHCT00AFT QUAD 2 -INPUT NAND GATE_ _ The TC74VHCT00A is an advanced high speed CMOS 2INPUT NAND GATE fabricated with silicon gate C2MOS