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    Phoenix Contact MC-1-5/-2-GF-3-81-P26-THR

    PCB headers - nominal current: 8 A - rated voltage (III/2): 160 V - nominal cross section: 1.5 mm² - number of positions: 2 - pitch: 3.81 mm - color: black - contact surface: Tin - mounting: THR soldering - pin layout: Linear pinning - solder pin [P]: 2.6 mm
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    Master Electronics MC-1-5/-2-GF-3-81-P26-THR 300
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    • 100 $2.25
    • 1000 $2.11
    • 10000 $2.05
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    Phoenix Contact MCV-1-5/-8-GF-3-81

    PCB headers - nominal current: 8 A - rated voltage (III/2): 160 V - nominal cross section: 1.5 mm² - number of positions: 8 - pitch: 3.81 mm - color: green - contact surface: Tin - mounting: Wave soldering - pin layout: Linear pinning - solder pin [P]: 3.4 mm
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    Master Electronics MCV-1-5/-8-GF-3-81 185
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    • 10 $5.16
    • 100 $4.58
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    Phoenix Contact IMC-1-5/10-STGF-3-81

    PCB connector - nominal current: 8 A - rated voltage (III/2): 160 V - nominal cross section: 1.5 mm² - number of positions: 10 - pitch: 3.81 mm - connection method: Screw connection with tension sleeve - color: green - contact surface: Tin
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    Master Electronics IMC-1-5/10-STGF-3-81 44
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    • 10 $15.48
    • 100 $13.62
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    Phoenix Contact MCDV-1-5/-3-GF-3-81

    PCB headers - nominal current: 8 A - rated voltage (III/2): 160 V - nominal cross section: 1.5 mm² - number of positions: 3 - pitch: 3.81 mm - color: green - contact surface: Tin - mounting: Wave soldering - pin layout: Linear pinning - solder pin [P]: 3.4 mm - In combination with MCV plug components - both an MCVW and an MCVR plug must be used.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics MCDV-1-5/-3-GF-3-81 14
    • 1 $8.02
    • 10 $8.02
    • 100 $7.13
    • 1000 $6.40
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    Samtec Inc S1SS-02-30-GF-38.00-L

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics S1SS-02-30-GF-38.00-L
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    • 10 $4.33
    • 100 $3.51
    • 1000 $2.16
    • 10000 $1.56
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    GF38 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MGFS44V2735

    Abstract: Q-35 2.7 3.5 s band
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIM INARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFS44V2735 2.7 - 3.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS44V2735 is an internally impedance-matched


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    mgfs44v2735-45dbc20th/janq-35+12.7 3.5 s band PDF

    MGFK44A4045

    Contextual Info: PRELIMINARY MITSUBISHI s e m ic o n d u c t o r <GaAs fet> MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING T he M G F K 4 4 A 4 0 4 5 is an internally impedance matched G aAs power F E T especially Unit : millimeters


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    mgfk44a4045gf-3825ohmfk44a4045 PDF

    MGFC42V5964A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfc42v5964aitem-51 PDF

    MGFS45V2735

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfs45v2735-45dbc25deg PDF

    MGFK44A4045

    Abstract: SCL4035
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK44A4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfk44a404500ghz01ghz20ghz14+221ghzscl4035 PDF

    MGFC45V5964A

    Abstract: IM324
    Contextual Info: 27-March&#39;98 MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY MGFC45V5964A Notice : This is not a final specification. Some parametric limits are subject to change. 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V5964A is an internally impedance matched


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    27-marchmgfc45v5964aim324 PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC45V5964A 5.9 – 6.4 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfc45v5964a-45dbc PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC45V3642A 3.6 – 4.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfc45v3642a-45dbc PDF

    mgfs44v2735

    Contextual Info: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfs44v2735-45dbc PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC45V4450A 4.4 – 5.0 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfc45v4450a-45dbc PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC44V4450 4.4 – 5.0 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfc44v4450-45dbc PDF

    MGFS45V2735

    Contextual Info: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfs45v2735-45dbc PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC45V6472A 6.4 – 7.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfc45v6472a-45dbc PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC44V3642 3.6 – 4.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfc44v3642-42dbc PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFC45V3642A 3.6 DESCRIPTION - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET u n it : m m OUTLINE The M G F C 45V 3642A is an in ternally im ped ance-m a tched


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    mgfc45v3642a PDF

    MGFC50G

    Contextual Info: < C band internally matched power GaN HEMT > MGFC50G5867 5.8 – 6.7 GHz BAND / 100W OUTLINE DRAWING Unit : m illim eters FEATURES 24.0±0.3 • Amplifier for C-band SATCOM ② φ2.2 0.6±0.2 QUALITY 4.4+0/-0.3 2MIN ② 2.4 APPLICATION ① 8.0±0.2 17.4±0.2


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    mgfc50g5867cstg-14855mgfc50g PDF

    SSD1963

    Abstract: SSD1963QL9 SSD1963 16 bit SSD1963G41
    Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1963 Advance Information 1215KB Embedded Display SRAM LCD Display Controller This document contains information on a new product. Specifications and information herein are subject to change without notice. http://www.solomon-systech.com


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    ssd19631215kb21-nov-0808-dec-08+524-nov-082002/95/ecssd1963ql9ssd1963 16 bitssd1963g41 PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5964A 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfc45v5964aitem-51june/2004 PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfc42v6472aitem-51june/2004 PDF

    MGFC42V5964A

    Abstract: mgfc42v5964
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfc42v5964aitem-51june/2004mgfc42v5964 PDF

    MGFC42V6472A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfc42v6472aitem-51 PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


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    m6sta-005va/wa/samf-156sta-006va/wa/samf-156sra-002va/wa/samf-622sta-004va/wa/sa+16mf-622sta-005va/wa/samf-622sta-006va/wa/samf-622sra-002va/wa/samf-2500sta-002va/wa003va/wa004va/wac42v5964mgf1302 transistormgf1601mgfc1402m57721m67760lch2 marking sot-89 mmic2sc5125mitsubishi m57710-am68776 PDF

    MGFC44V

    Abstract: MGFC44V6472
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC44V6472 6 . 4 — 7.2G H Z BAND 2 4 W INTERNA LLY M ATCHED GaAs FE T DESCRIPTION T h e M G F C 4 4 V 6 4 7 2 is an in te rn a lly OUTLINE DRAWING im p e d a n c e -m a tc h e d G aA s p o w e r F E T especially designed fo r use in 6 .4 ~


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    mgfc44v647242dbcmgfc44v PDF

    3642G

    Abstract: MGFC44V3642
    Contextual Info: MITSUBISHI S E M IC O N D U C T O R <GaAs FET> MGFC44V3642 3.6-4.2GHZ BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3642 is an internally impedance-matched CUTUP'EDRßiWNG Lht:nillimeters inches GaAs power FET especially designed for use in 3.6-4.2


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    mgfc44v3642-42dbcdigita2790ghz+325degdec-983642g PDF