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MGFC45V6472A Datasheets (2)

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Mitsubishi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGFC45V6472A		Mitsubishi	6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET	Original	PDF	231.53KB	3
MGFC45V6472A		Mitsubishi	6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET	Original	PDF	40.88KB	2

MGFC45V6472A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC45V6472A 6.4 – 7.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc45v6472a -45dbc	PDF
IM324 Abstract: high power FET transistor s-parameters MGFC45V6472A Contextual Info: 27-March'98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched	Original	27-march mgfc45v6472a 25deg im324 +1high power fet transistor s-parameters	PDF
MGFC45V6472A Abstract: GF-38 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	mgfc45v6472a -45dbc 120ma 10mhz +1gf-38	PDF
Contextual Info: 27-March'98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> N o tic e : T his is n o t a fin a l s p e c ific a tio n . S o m e p a ra m e tric lim its are s u b je c t to c h a n g e MGFC45V6472A 6.4-7.2GHZ BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION	OCR Scan	27-march mgfc45v6472a gfc45v6472a	PDF
MGFC45V6472A Contextual Info: 27-March'98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched	Original	27-march mgfc45v6472a 2ghz70 25deg	PDF
MGFC45V6472A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	mgfc45v6472a -45dbc june/2004	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC45V6472A 6.4 – 7.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc45v6472a -45dbc	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	mgfc45v6472a -45dbc 25deg june/2004	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	m6sta-005va/wa/sa mf-156sta-006va/wa/sa mf-156sra-002va/wa/sa mf-622sta-004va/wa/sa +16mf-622sta-005va/wa/sa mf-622sta-006va/wa/sa mf-622sra-002va/wa/sa mf-2500sta-002va/wa 003va/wa 004va/wa c42v5964 mgf1302 transistor mgf1601 mgfc1402 m57721 m67760lc h2 marking sot-89 mmic 2sc5125 mitsubishi m57710-a m68776	PDF