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    MGFC42V6472A Search Results

    MGFC42V6472A Datasheets (1)

    Mitsubishi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MGFC42V6472A
    Mitsubishi 6.4-7.2GHz band 16W internally matched GaAs FET Scan PDF 85.28KB 2

    MGFC42V6472A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    mgfc42v6472aitem-51june/2004 PDF

    GAAS FET AMPLIFIER f 10Mhz to 2 GHz

    Abstract: MGFC42V6472A
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    mgfc42v6472aitem-51gaas fet amplifier f 10mhz to 2 ghz PDF

    MGFC42V6472A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    mgfc42v6472aitem-51 PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC42V6472A 6.4 – 7.2 GHz BAND / 16W DESCRIPTION unit : m m OUTLINE The MGFC42V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    mgfc42v6472a-45dbc PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC42V6472A 6.4 – 7.2 GHz BAND / 16W DESCRIPTION unit : m m OUTLINE The MGFC42V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    mgfc42v6472a-45dbc PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


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    m6sta-005va/wa/samf-156sta-006va/wa/samf-156sra-002va/wa/samf-622sta-004va/wa/sa+16mf-622sta-005va/wa/samf-622sta-006va/wa/samf-622sra-002va/wa/samf-2500sta-002va/wa003va/wa004va/wac42v5964mgf1302 transistormgf1601mgfc1402m57721m67760lch2 marking sot-89 mmic2sc5125mitsubishi m57710-am68776 PDF

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original
    h-cx587-rki-1311mgf4937mgfg5h1503+8mgf4937amgd-32mgfg5h1502mgf0904mgfc39v5964mgf2430mgf0909aba012j1 PDF