GE 5T2 Search Results
GE 5T2 Price and Stock
onsemi NCP692MN25T2GEVBPower Management IC Development Tools NCP692 2.5V EVAL BRD |
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NCP692MN25T2GEVB |
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onsemi NCP690MN15T2GEVBPower Management IC Development Tools NCP690 1.5V EVAL BRD |
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NCP690MN15T2GEVB |
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onsemi NCP690MN25T2GEVBPower Management IC Development Tools NCP690 2.5V EVAL BRD |
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NCP690MN25T2GEVB |
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onsemi NCP692MN15T2GEVBPower Management IC Development Tools NCP692 1.5V EVAL BRD |
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NCP692MN15T2GEVB |
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Carling Technologies 2MS-WSP5-T2-B4-M6GEToggle Switches 2MSWSP5T2B4M6GE |
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2MS-WSP5-T2-B4-M6GE |
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GE 5T2 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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simple Binary counterContextual Info: Philips Semiconductors Product specification Up/Down binary counter with reset and ripple clock 74F191 PIN CONFIGURATION FEATURES • High speed -125M Hz typical f^AX w • Synchronous, reversible counting D1 H m vcc • 4-Bit binary Q i GE g d0 Q oH 23 cp |
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74F191 -125M 74F191 711002b DCH1312 500ns SF00006 711002b simple Binary counter | |
2512D48HN
Abstract: 2503S12HN 2505D12HN 2505S12HN 2512D12HN 2512S12HN 2515D12HN 2515S12HN
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2500HN 12Vin) 24Vin) 48Vin) 12Vin 2512D48HN 2503S12HN 2505D12HN 2505S12HN 2512D12HN 2512S12HN 2515D12HN 2515S12HN | |
L7E transistor
Abstract: BF820 BF821 BF822 BF823
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BF821 BF823 BF820, BF822 BF821 L7E transistor BF820 BF823 | |
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
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CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 | |
Contextual Info: Customer Information Sheet SHT D R A W I N G No. : M80-5T2XXXXMF SPECIFIC AT IO NS : MATERIAL: MO U LD IN G = G L A S S - F I L L E D PPS, UL94V-0, BLA CK C O N T AC T = PH O SP HO R BRONZE JACKSCREW. NUT : S TA I N L E S S STEEL F INISH CONTACTS : 05 = 0.75(i G O L D ALL OV ER |
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M80-5T2XXXXMF UL94V-0, | |
40N60A
Abstract: 40n60 IXGH40N60 743e 40n60 igbt AT/40n60 igbt
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O-247 O-204 4fciflLi25b 40N60 40N60A 40N60A IXGH40N60 743e 40n60 igbt AT/40n60 igbt | |
BC337-01
Abstract: 2n2272 2N2246 D32K BC338-01 PT1836 PT1837 T018 2n2255 transistor u77d
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T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA BC337-01 2N2246 D32K BC338-01 PT1836 PT1837 T018 2n2255 transistor u77d | |
OP490Contextual Info: Low-Voltage Micropower Quad Operational Amplifier OP-490 A N ALO G D EVIC ES FEATURES GENERAL DESCRIPTION • The OP-490 is a high-performance micropowerquad op amp that operates from a single supply of +1.6V to +36V or from dual supplies of +0.8V to +18V. Input voltage range includes the |
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OP-490 OP-490 OP-490â DAC-8408 0P-490 OP490 | |
Contextual Info: E S C HE ELECTRONICS CORP D| ï T-U*7-l3 3037257 G Ü Ü Ü M m Q | DIGITAL DELAY LINES 8 PIN SINBLE-IN-LINE PACKAGES ' TTL COMPATIBLE 5 T A P S A N D SIN G LE OUTPUT SERIES STAIMD 5G .180 .180 MAX. MAX. W h ite Dot locates Pin 1 1.110 •1.110 8 P I N S O N |
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500ppm 010th | |
5T45
Abstract: 5G35 5T150 5G30 5t30 5T-35 5T50 5G75 5T100 5T25
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T-HHT-13 5T100 5T150 5T200 5T250 500ppm/Â 010th 5T45 5G35 5G30 5t30 5T-35 5T50 5G75 5T25 | |
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 1011-2L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 22 dBm, - Single carrier level • High power - P-|dB = 33.5 dBm at 10.7 GHz to 11.7 GHz |
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1011-2L 011-2L TIM1011-2L MW50080196 0C7250 002227b | |
JRC OPamp
Abstract: depth sounder j811 JRC 5068 G diode T-71 opamp jrc t1053 LM6142 LM6142AIM LM6142AIN
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LM6142 LM6144 LM6142/44 importan60 20-3A JRC OPamp depth sounder j811 JRC 5068 G diode T-71 opamp jrc t1053 LM6142AIM LM6142AIN | |
IRGKI140U06Contextual Info: International ïsr]Rectifier PD-9.964B IRGKI140U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all ''tail" |
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25KHz 100KHz IRGKI140U06 C-788 IRGKI140U06 | |
Contextual Info: COM’L : -10/15/20 IN D :-18/24 M A C H 2 3 0 - 1 0 /1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 8 4 P ins ■ 6 4 O u tp u ts ■ 12 8 M a cro cells ■ 128 F lip -flo p s ; 4 c lo c k ch o ic e s |
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ACH230 PAL22V10 MACH230 025752b PQR208 208-Pin 16-038-PQR-2 PQT044 | |
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Contextual Info: HARRIS H S E M I C O N D U C T O R P 2 1 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver October 1995 Description Features • I Drives N-Channel MOSFET Half Bridge The H IP 2100 is a high frequency, 100V Half Bridge N-Channel M O S F E T driver IC, available in 8 lead plastic |
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00V/2A 116VDC | |
servo motor AL 85
Abstract: 33030P BT Motorola
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MC33030 C33030 MC33030 b3b72S3 Q15bl servo motor AL 85 33030P BT Motorola | |
LT 428Contextual Info: "□a POWEREX INC D E I 7Sci4bai 0005^20 1 f ~ T-25—19 m jH u a w x FT250DM Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.75.15 Phase Control SCR 250 Amperes Avg |
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T-25-- BP107, FT250DM peres/200-1800 LT 428 | |
h1802
Abstract: #ZZZB 5T-25 1B02b STK 027 1802A
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H1802A/AC H1802BC 16x16 h1802 #ZZZB 5T-25 1B02b STK 027 1802A | |
Contextual Info: DEVICE SPECIFICATION IO-OUTPUT CLOCK DRIVER SC3517 FEATURES GENERAL DESCRIPTION • Ten clock outputs: The SC3517 is a precision low skew clock driver with ten outputs. It requires a 2X frequency clock input from a single-ended TTL or an ECL differential source operating between +5V and ground. This 2X |
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50-75il SC3517 25-unit 28-pin SC3517S-1/D | |
70T3539MContextual Info: HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE IDT70T3539M Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz)(max.) |
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IDT70T3539M 166MHz 133MHz) 12Gbps AN-411, 70T3539M | |
Contextual Info: HIGH-SPEED 2.5V 256/128K x 72 IDT70T3719/99M SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access |
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256/128K IDT70T3719/99M 166MHz 133MHz) 5T2010 5T9010 5T905, 5T9050 | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD 7 0 3 0 0 0 ,7 0 3 0 0 1 V851 32-/16-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ¿¡PD703000 is a p ro d u c t in the V 850 fam ily™ of 3 2 -b it sin g le -c h ip m ic ro c o n tro lle rs fo r re a l-tim e control |
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32-/16-BIT PD703000 PD703001 PD703000. 10935E | |
Contextual Info: HIGH-SPEED 2.5V 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access |
Original |
512/256/128K IDT70T3339/19/99S 200MHz 166MHz 133MHz) 14Gbps 144-pin | |
MECL III Series
Abstract: MC1696 MC1654 MC1600 MC1651 MC1662 MC1668 MC1670 MC1672 MC1674
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MC1600 MECL III Series MC1696 MC1654 MC1651 MC1662 MC1668 MC1670 MC1672 MC1674 |