GDDG Search Results

S5VB10

Abstract: s5vb40 SHINDENGEN DIODE
Contextual Info: SHINDENGEN ELECTRIC MFG 54E D • fl2 n 3 6 7 ■ GDDGSIS bST « S H E J O U T L IN E D IM E N S IO N S S5VBD 600V 6A ■ R A T IN G S A b s o lu te Maximum R a tin g s m s Item i£ # S J f Storage Temperature SteSM B« Operating Junction Temperature Maximum Reverse Voltage

Contextual Info: ACCUTEK MICROCIRCUIT BTE D DlD7t,47 GDDGDl? 7 ACU T -4 6 -2 3 -1 8 ACCUTEK AK581024W 1,048,576 x 8 bit CMOS Dynamic Random Access Memory MICROCIRCUIT DESCRIPTION The Accutek AK581024W high density memory module is a random access memory organized in 1 Meg x 8 bit words.

SCR 2000V 1000A

Abstract: GE-SPCO C702 cycloconverters Thyristor ys 150 C702CA C701PN oms 450 thyristor YS Thyristor SCR C701L
Contextual Info: N l û E CO/ STATIC PUR CMPNT 3ME » 3074504 GDDG1G3 1 • ù E S P High Power 53m m Silicon Controlled Rsctifier GE-SPCO S ta tic Pntoer C nm nonent O peration fifnlnem .P A USA 1000 A Avg. Up To 3200 Volts "7\W\*| PG 6.052 9/1/88 [ C7 Q2 A M P L IF Y IN G G A T E

Contextual Info: MAX-L ION CORP 32E D • 5fl75TLi5 GDDGD52 L> ■ SURFACE MOUNT DEVICES OPERATING AND STORAGE TEMPERATURE - 6 5 ° C to +175°G TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV VPK lo @ TC* Aa v 6C Maximum Forward

GDDG

Abstract: GDDG37G 1413L
Contextual Info: IINTL MICROCIRCUITS INC E5E » 4050410 GDDG37G 1 MPY-12 IMli 72 X /2 PARALLEL MULTIPLIER * I n t e r n a t io n a l M ic r o c ir c u it s I nc PRODUCT D E S C R IP TIO N S PRODUCT F E A T U R E S ^ Fast parallel 12 x 12 bit multiplication T he M PY-12IM I family of circuits are high-speed, 12 by

2N4039

Abstract: 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4038 2N4221
Contextual Info: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES

2N4303

Abstract: 2N3437 2n3866 noise 2N5566 2N4039 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161
Contextual Info: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES

Contextual Info: S7E ]> BMSIBSS GDDGÛ12 PAG • F G R S B40C20ÜÜ/15ÜÜ FAGOR BüUUUüUUO/1500 FAGOR ELECTRONICS Dimensions in mm. Plastic Voltage 100 to 1.000 V. Case 1 .1 ±0.05 Current 2.0 A. i= P = a • In process of evaluation UL 1449 • Low Cost • Case: Epoxy encapsulation

Contextual Info: SEMELAB LTD 37E Û1331Ô7 GDDG1SÔ SEMELAB K BUP49 /> o d NPN MULTI-EPITAXIAL TRANSISTOR M E C H A N IC A L D A T A Designed for high energy applications requiring robust fast switching devices D im ensions in mm FEATURES • LOW V CE|I11, 1-6 • FA ST SW ITCHING

uA 726 HC

Abstract: IC00030
Contextual Info: 323 011 4 ELECTRONIC DESIGNS INC_ 71C 0 0026 7 ELE CTR ON IC DESIGNS INC 71 D e | 323D114 GDDGQBt. 7 | Electronic Designs Inc. EDH5832-30/35/45 32K x 8 EEPROM T he EDH5832 is an e le ctrica lly erasable, p ro gra m m a ble rea d-o nly m e m o ry EEPRO M w ith ea se -o f-u se features. EEPRO M can be m od ifie d using sim p le T T L level

B250 FAGOR C2000 1500

Abstract: fagor b40 C2000 fagor B250 C2000 b380 c2000 B40C2000/1500 b40c200 fagor b380 c2000 B80C2000 fagor b380 c2000/1500 fagor b80 c2000
Contextual Info: BMSIBSS GDDGÛ12 PAG • F G R S S7E ]> B40C20ÜÜ/15ÜÜ FAGOR BüUUUüUUO/1500 FAGOR ELECTRONICS Dimensions in mm. .1 ±0.05 Plastic Case Voltage 100 to 1.000 V. Current 2.0 A. i= P = a • In process of evaluation UL 1449 \ + «y ~ co co co • Low Cost

Cyrix FasMath

Abstract: CX-83S87 cyrix 386SX fcom 7c DATA SHEET FOR OL 107 E SOLDER PEST FasMath 83D87 386SX CIRCUIT diagram 80386 83S87
Contextual Info: 83S87 User’s Manual High Performance CMOS Math Processor CYRIX CORP 3bE » H SSñ^ñn □ GQDlB'ì fi • T—49—1 2-05 FasMath CX-83S87 User's Manual January, 1990 o * P.O. Box 850118 Richardson, TX 76085-0118 CYR CYRIX CORP 3bE D ■ 2 5 ö t filici □ □ D D I M Q

C-CUBE CL450

Abstract: CL9100
Contextual Info: C L 4 5 0 MPEG V id e o D e c o d e r U s e r’s M a n u a l % C-Cube Microsystems • IVbM EbT 00DQ4Ô0 flbE ■ C-Cube Microsystems reserves the right to change any products described herein at any time and without notice. C-Cube Microsystems assumes no responsibility or liability arising from the use of the prod­

VCC3 1156 01

Abstract: VCC3 1156
Contextual Info: » I T T I O L O » _ S S S S S S GSM31P512KB-I66 256KB/512KB Modules s— Features Functional Description cont’d • • • • The GSM31P256KB-I66, and 256KB module, use GSI’s GS81132Q 32KX32 synchronous burst SRAM and a single 5V 8Kx8 SRAM for the tag. The GSM14P512K-I66, a

alpha wire catalog

Abstract: RW-69W RW67V
Contextual Info: •rlnm SEMI-PRECISION POWER WIREWOUND LAS/AS Alloy resistance w ire wound to specific parameters including TCR’s from +20 to +5500 ppm /'C SERIES* Alpha - Digital Marking Silicone conformai coating AI! welded cap — i and lead assembly 1/2 watt to 10 watts

I-CUBE

Abstract: P103t zener diode phc 16 ZENER diode p317 AB P89 zener PLK3210 hk30 transistor 4287 AB zener phc 12 kck 223
Contextual Info: SH5 I-Cube* IQX Family Data Sheet Description Features The IQX family of SRAM-based bit-oriented switching devices is manufactured using a 0.6vim CMOS process. These devices offer clock speed of up to 150 MHz and fastest pin-to-pin delay of 6 ns. • SRAM-based, in-system programmable

KL21

Abstract: T12N
Contextual Info: EUPEC SEE T> 3 4 0 3 2* 1 7 GQGGbm S3Ö H U P E C T12N T 'Z J 5 -IS TVpenrelhe/iype range T 12 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vrrm Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom

Contextual Info: Standard Product February, 1994 LXT304A Low -Pow er T1/E1 Integrated Short H aul Transceiver with Receive Jitter Attenuation Features The LXT304A is a fully integrated low-power transceiver for both North American 1.544 MHz Tl , and European 2.048 MHz (E l) applications. It features a constant low

SO-DIMM 144-pin

Contextual Info: IBM11T1640L 1M x 64 144 PIN SODIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns fcAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns

reh3

Abstract: 9555TAC 7B-26
Contextual Info: 64>*, ?6=33|<60>3 >;872 >?0?3 =380C 4IEUVSIT ^ N`glg akgdYlagf ^ JED klYlmk af\a[Ylgj ^ Da]d][lja[ klj]f_l` 9555T ^ X]jg [jgkk gj jYf\ge lmjf2gf ^ Bmadl2af kfmZZ]j ^ P]egnYZd] ^af_]j hjgg^ [gn]j YnYadYZd] ^ NYf]d egmfl ^ Efnajgfe]flYd ^ja]f\dq hjg\m[l .PgHQ [gehdaYfl/

Contextual Info: ^ 3 “ ^ I / I J • ^ A dvanced L in e a r D evices, Inc. ALD4706A/ALD4706B ALD4706 QUAD ULTRA MICROPOWER RAIL-TO-RAIL CMOS OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES T h e A LD 4706 is a quad monolithic C M O S ultra micropower high slew-rate operational amplifier intended for a broad range of analog applications

ilpi 031

Abstract: NB10EP143 NB10EP143J IOR 450 M ILPI
Contextual Info: NTT Electronics NB10EP143 9-bit Hold Register PIN NAME FUNCTIONS Pin Function Dü - D8 SEL CLK1, CLK2 MR QO - Q8 NC Data Inputs Mode Select Input Clock Inputs Master Reset Data Outputs No Connection -h o 4 D2 SEL Mode L H Load Hold o W u m a £ > isd fed

DR-B 2003

Abstract: sw 2604 ic ic sw 2604 YC 2604 sw 2604 SI 1125H DIODE S4 76A TA1360AFG DR26A sw68
Contextual Info: TA1360AFG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA1360AFG YCbCr/YPbPr Signal and Sync Processor for Digital TV, Progressive Scan TV and Double Scan TV The TA1360AFG integrates an analog component signal YCbCr/YPbPr processor and sync processor in a 80-pin QFP

equivalent D 13007

Abstract: equivalent 13007 valox* 457 LD 13007
Contextual Info: General Specifications MATERIALS Insulator: Blue glass filled thermopalstic polyester Valox UL 94V-0 Approved; Green glass filled ployphenylene sulfide Ryton UL 94V-0 Approved; Natural brown polyetheretherketone Peek UL 94V-0 Approved; Other materials available.