GAN BJT Search Results
GAN BJT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
GAN BJT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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28F0181-1SR-10
Abstract: CAPACITOR 150 RED
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RF3928280W RF3928 RF3928 DS120508 28F0181-1SR-10 CAPACITOR 150 RED | |
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
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RF3928 RF3928280W DS120508 | |
Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
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RFHA1025 RFHA1025 96GHz 215GHz DS120613 | |
ATC100B620
Abstract: L22 amplifier Gan hemt transistor RFMD
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RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD | |
Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
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RFHA1025 RFHA1025 96GHz 215GHz DS120928 | |
Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
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RFHA1025 96GHz 215GHz DS120613 | |
RF3928B
Abstract: power transistor gan s-band RF392
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RF3928B RF3928B DS111208 power transistor gan s-band RF392 | |
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
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RF3928B DS120503 | |
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
Original |
RF3928B RF3928B DS120503 | |
GaN hemt
Abstract: power transistor gan s-band air surveillance system diagram using radar
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RF3928280 RF3928 RF3928 DS110720 GaN hemt power transistor gan s-band air surveillance system diagram using radar | |
atc100a150
Abstract: power transistor gan s-band
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RF3928B RF3928B DS120503 atc100a150 power transistor gan s-band | |
Contextual Info: RFHA3944 60W GaN WIDEBAND POWER AMPLIFIER RFHA3944 Proposed 60W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features Broadband Operation Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology |
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RFHA3944 RF360-2 800MHz 2500MHz -40dBc DS120418 | |
Contextual Info: RFHA3942 35W GaN WIDEBAND POWER AMPLIFIER RFHA3942 Proposed 35W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features Broadband Operation Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology |
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RFHA3942 RF360-2 800MHz 2500MHz -40dBc DS120418 | |
Contextual Info: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features Broadband Operation 30MHz to 6000MHz Advanced GaN HEMT Technology 2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB |
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RFSW2100D 30MHz 6000MHz DS120620 | |
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35F0121-1SR-10
Abstract: ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR
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RF3928280W RF3928 RF3928 DS110221 35F0121-1SR-10 ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR | |
Contextual Info: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology |
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RFG1M09090 700MHZ 1000MHZ 1000MHZ RF400-2 865MHz 960MHz 44dBm | |
RFG1M09180
Abstract: ATC100B150JT
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RFG1M09180 700MHZ 1000MHZ RFG1M09180 RF400-2 865MHz 960MHz 47dBm ATC100B150JT | |
Contextual Info: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology |
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RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm | |
thermocouple gaasContextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF IN |
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RF3928280W RF3928 RF3928 DS110317 thermocouple gaas | |
ATC100B100JT
Abstract: ATC100B1R8BT alt110
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RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm ATC100B100JT ATC100B1R8BT alt110 | |
ATC800B680JTContextual Info: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features Advanced GaN HEMT Technology Peak Modulated Power >90W Advanced Heat-Sink Technology |
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RFG1M20090 RFG1M20090 RF400-2 44dBm -35dBc -55dBc DS120418 ATC800B680JT | |
Contextual Info: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance |
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RF3933D RF3933D90 96mmx2 52mmx0 RF3933D DS110520 | |
transistor 1800MHz
Abstract: r.f. amplifier 30mhz
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RF3826 30MHz 2500MHz, 2500MHz 2500MHz) transistor 1800MHz r.f. amplifier 30mhz | |
rf3826
Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
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RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz |