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RFHA1025 Datasheets (2)

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RF Micro Devices

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RFHA1025		RF Micro Devices	RF Amplifiers, RF/IF and RFID, RF AMP 280W 1.215GHZ	Original	PDF		10
RFHA1025PCBA-410		RF Micro Devices	RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF EVAL FOR RFHA1025 PA	Original	PDF		10

RFHA1025 Price and Stock

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Qorvo


Qorvo RFHA1025 RF & MW POWER AMPLIF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	RFHA1025				25	1 - 10 - 100 - 1000 - 10000 -	Get Quote

RFHA1025 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	RFHA1025 RFHA1025 96GHz 215GHz DS120613	PDF
Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	RFHA1025 RFHA1025 96GHz 215GHz DS120928	PDF
Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high	Original	RFHA1025 RFHA1025 DS130910	PDF
Contextual Info: RFHA1025 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features • Wideband Operation 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology  Supports Multiple Pulse Conditions  10% to 20% Duty Cycle	Original	RFHA1025 96GHz 215GHz RFHA1025 DS130515	PDF
Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	RFHA1025 96GHz 215GHz DS120613	PDF
RF565-2 Abstract: 440 transistors Contextual Info: RFMD. High-Power GaN Matched Power Transistors MPT RFMD’s MPT products are high-power discrete GaN amplifiers designed for radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high-power density	Original	RF565-2 RF56age 50-operation 440 transistors	PDF
Integrated Synthesizers with Mixers Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers Contextual Info: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services	Original	11F-B, Integrated Synthesizers with Mixers Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers	PDF