ATC100B150JT Search Results

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

MCR50V107M8X11

Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 2, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9060NR1

J365

Abstract: TLC 3391 ATC100B150JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 1, 2/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to

NIPPON CAPACITORS

Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with

Contextual Info: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >240W  Advanced Heat Sink Technology  Single Circuit for 865MHz To

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to

mcr63

Abstract: T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3 mcr63v477m
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to

Resistor mttf

Abstract: MRF6S9060NBR1 MRF6S9060NR1 MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION

A114

Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 atc100b220j
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION Designed for N - CDMA, GSM and GSM EDGE base station applications

TD-SCDMA

Abstract: A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

AN3263

Abstract: MRF6V4300N AN1955 MRF6V4300NBR1 MRF6V4300NR1 C3225JB2A105KT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to

LDMOS DVB-T transistors

Abstract: 470-860 CRCW120610RJ RF high POWER TRANSISTOR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with

RF1000LF

Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in

Contextual Info: RFG1M09180 RFG1M09180 180W GaN Power Amplifier 700MHz to 1000MHz The RFG1M09180 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 700MHz to 1000MHz frequency band, ideal for WCDMA and LTE applications. Using

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to