AN3263 Search Results

AN3263

Abstract: metric bolts tightening torque graphite foil m2 m2.5 m3 bolt tensile bts 2140 1b data sheet "RF Power Transistors"pallet metric bolts torque metric bolts torque m 32 omp amplifier A104
Contextual Info: Freescale Semiconductor Application Note AN3263 Rev. 0, 6/2006 Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages By: Mahesh Shah, Richard Wetz, Lindsey Tiller, Leonard Pelletier, Eddie Mares and Jin - wook Jang

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with

MRF6V2300N

Abstract: MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

ATC 1084

Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage

MRF1550

Abstract: FM LDMOS freescale transistor MRF1550N UHF AN721 MRF1550FNT1 AN215A S11 zener diode MRF1550N MRF1550NT1 VK200
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 13, 6/2008 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

hatching machine

Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9060NR1

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to

MRF6S19060N

Contextual Info: Document Number: MRF6S19060N Rev. 5, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

APP3263

Abstract: AN3263 introduction of demux DS3154 DS3150 DS3151 DS3152 DS3153
Contextual Info: Maxim > App Notes > TELECOM Keywords: supermapper, superframer, transmux, clear channel, map/demap, T3, line interface units, t3 LIUs, trans mux Jun 09, 2004 APPLICATION NOTE 3263 Connecting the Agere Supermapper Device Family to Dallas T3 LIUs Abstract: This application note shows how to connect our T3/E3 line interface units LIUs in clear-channel, transMUX,

MRF1535N

Abstract: MRF1535FNT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1535N Rev. 11, 2/2008 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This

C4532X5R1H475MT

Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
Contextual Info: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier

MRF8P9040N

Abstract: mrf8p ATC100B820JT RO4350B
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for

AN1977

Abstract: AN1987 AN3263 J1213 MW6IC1940NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-1 Rev. 3.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940GNB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base

MRF6S21060N

Abstract: CRCW12061001FKEA j8084 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A113 JESD22-A114 MRF6S21060NBR1 MRF6S21060NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

CRCW12064701FKTA

Abstract: a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22 MW6IC1940NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 1, 1/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This

ATC600F241JT250XT

Abstract: GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT AFT09MS031NR1 inductor 50 NH GRM31CR61H106KA12
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 1, 8/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of

Resistor mttf

Abstract: MRF6S9060NBR1 MRF6S9060NR1 MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION