C4532X5R1H Search Results

C1005JB

Abstract: C1608C0G1H272J C5750X5R1C476M230KA c2012jb1h C2012X5R1H104K C1005X5R1E154K C3216JB0J476 C1608X7R1H154K C2012CH1H C1005JB1A105M
Contextual Info: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2012 • All specifications are subject to change without notice.

Contextual Info: User's Guide SLVU185 – September 2006 TPS5410EVM-203 1-A, Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 4

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade General Up to 50V Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220]

C2012JF1C475Z

Abstract: C4532JF1H106Z C5750JF1E476Z C2012JF1A106Z C3216JF1H225Z c1608jf1a225z c3225 transistor C1608JF1C105Z CC0603 x5r C1608CH1H100D
Contextual Info: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and

ipc 9850

Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage

C1608CH1H010C080AA

Abstract: C1608X7R1H103K080AA 1608 B 100NF C2012X5R1H105K C1005X5R1A225K050BC c2012x5r1v C3216JB1H106K C1005C0G1H100C
Contextual Info: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2011 • All specifications are subject to change without notice.

NI-1230-4H

Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 2, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage

C4532X5R1H475MT

Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
Contextual Info: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier

MRF5S21045N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

IC SEM 2004

Abstract: PTC THERMISTOR TDK push-pull DC-dc converter TDK Ferrite Core PC44 P8205T BI-Tech ptc 100 rtd PTC TDK n1c thermistor HIP2101
Contextual Info: ISL6740, ISL6741 Data Sheet January 2004 Flexible Double Ended Voltage and Current Mode PWM Controllers FN9111.2 Features • Precision Duty Cycle and Deadtime Control The ISL6740, ISL6741 family of adjustable frequency, low power, pulse width modulating PWM voltage mode

dubilier CLP

Abstract: B340A LTC3770 LTC3770EG LTC3770EUH Si4884 33a sot23 diode 12v 30A regulator
Contextual Info: LTC3770 Fast No RSENSETM Step-Down Synchronous Controller with Margining, Tracking and PLL DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n Wide VIN Range: 4V to 32V ±0.67% 0.6V Reference Voltage Output Voltage Tracking Capability Programmable Margining

C5750JF1E476Z

Contextual Info: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and

CRCW08054701FKEA

Abstract: MWE6IC9100N ZO 607 MA MWE6IC9100GNR1 MWE6IC9100NBR1 MWE6IC9100NR1 A114 A115 AN1977 AN1987
Contextual Info: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage

Nichicon PL(M)

Abstract: Chemi-Con 4TPE150MAZB United Chemi-Con series SANYO POSCAP D3 simple switcher 5v 10A Aluminum Electrolytic Capacitor nichicon lead 12V DC to 24V dC converter circuit diagram SI4816BDY fB g19
Contextual Info: LTC3708 Fast 2-Phase, No RSENSE Buck Controller with Output Tracking DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 3708 is a dual, 2-phase synchronous step-down switching regulator with output voltage up/down tracking

J771

Abstract: gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 MRF5S21045NR1 TLX8-0300 a113 bolt MRF5S21045N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

C4532

Abstract: C4532CH1H104J CC1812 C4532JB1H225K
Contextual Info: SMD, General Use C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low residual inductance assures superior frequency

HPA173-001

Abstract: HPA173 MSS1278-183MLB TPS5430 SLVU157 MSS1278-223MLB HPA173-002 TPS5431
Contextual Info: User's Guide SLVU157 – March 2006 TPS5430/31EVM-173 3-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3

PTC THERMISTOR TDK

Abstract: TDK Ferrite Core PC44 PS2801-1-A PTC TDK TDK PC44 ISL6741IBZ NTC thermistor 10k ohm rtd ic 0603 footprint IPC BI-Tech
Contextual Info: ISL6740, ISL6741 Data Sheet July 13, 2007 Flexible Double Ended Voltage and Current Mode PWM Controllers FN9111.4 Features • Precision Duty Cycle and Deadtime Control The ISL6740, ISL6741 family of adjustable frequency, low power, pulse width modulating PWM voltage mode

C1608JB1H472K

Abstract: C4532JF1C476 C2012JF1H105Z C3225JB0J107M C1608JF1H104Z C0603CH1H010C C0603CH1H0R5C C0603CH1HR75C C4532JF C1005CH1H120J
Contextual Info: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and

C1005X5R1V154K050BC

Abstract: C3216X7R1H335K160AC C3216X7R1H475K C3225X7R1H106 C4532X7R1E106M250KA C0402CH1C390K020BC C1608X7S1A475K C1608X5R1A226M C4532X7R1H685M250 C1608C0G1H102K
Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade General Up to 50V Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220]

ATC600F100JT250XT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

MRF5S21045N

Contextual Info: Document Number: MRF5S21045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

HPA173-001

Abstract: C4532X7R1E106KT TPS5431 HPA173-002 TPS5430 MSS1278-183MLB HPA173
Contextual Info: User's Guide SLVU157 – March 2006 TPS5430/31EVM-173 3-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3