SI4816BDY Search Results
SI4816BDY Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| Si4816BDY | Vishay Telefunken | Original | 86.75KB | 9 | |||
| SI4816BDY-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.8A 8-SOIC | Original | 13 | |||
| SI4816BDY-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.8A 8-SOIC | Original | 13 |
SI4816BDY Price and Stock
Vishay Intertechnologies SI4816BDY-T1-GE3Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4816BDY-T1-GE3 | 2,500 |
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SI4816BDY-T1-GE3 | Ammo Pack | 1 |
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| SI4816BDY-T1-GE3 | Tape & Reel | 52 Weeks | 2,500 |
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SI4816BDY-T1-GE3 |
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SI4816BDY-T1-GE3 | Cut Tape | 195 | 1 |
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| SI4816BDY-T1-GE3 | Tape & Reel | 195 | 100 |
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| SI4816BDY-T1-GE3 | Tape & Reel | 2,500 |
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| SI4816BDY-T1-GE3 | Cut Tape | 2,500 |
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SI4816BDY-T1-GE3 | Reel | 2,500 |
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SI4816BDY-T1-GE3 | 14 |
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SI4816BDY-T1-GE3 | 54 Weeks | 2,500 |
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SI4816BDY-T1-GE3 | 53 Weeks | 2,500 |
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Vishay Intertechnologies SI4816BDY-T1-E3Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SI4816BDY-T1-E3 | 2,500 |
|
Get Quote | |||||||
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SI4816BDY-T1-E3 | Tape & Reel | 52 Weeks | 2,500 |
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Buy Now | |||||
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SI4816BDY-T1-E3 |
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Get Quote | ||||||||
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SI4816BDY-T1-E3 | Cut Tape | 2,500 |
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Buy Now | ||||||
| SI4816BDY-T1-E3 | Tape & Reel | 2,500 |
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Buy Now | |||||||
| SI4816BDY-T1-E3 | Tape & Reel | 100 |
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Buy Now | |||||||
| SI4816BDY-T1-E3 | Cut Tape | 1 |
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Buy Now | |||||||
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SI4816BDY-T1-E3 | Reel | 2,500 |
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SI4816BDY-T1-E3 | 15 | 1 |
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SI4816BDY-T1-E3 | 12 |
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SI4816BDY-T1-E3 | 54 Weeks | 2,500 |
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SI4816BDY-T1-E3 | 53 Weeks | 2,500 |
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Vishay Siliconix SI4816BDY-T1-E3SI4816BDY-T1-E3 N-CHANNEL MOSFET MODULE, 5.8 A, 8.2 A, 30 V, 8-PIN SOIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4816BDY-T1-E3 | Bulk | 2,500 |
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Vishay Siliconix SI4816BDY-T1-E3/BKNDUAL N-CH 30-V (D-S) MOSFET W/SCHOT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4816BDY-T1-E3/BKN | Bulk | 1 |
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Vishay Huntington SI4816BDY-T1-GE3MOSFET 2N-CH 30V 5.8A 8-SOIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4816BDY-T1-GE3 | 20,000 |
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SI4816BDY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Si4816BDY
Abstract: Si4816BDY-T1-E3
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si4816bdy08-apr-05si4816bdy-t1-e3 | |
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Contextual Info: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5 |
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si4816bdy2002/95/ec2011/65/eujs709a+1 | |
Si4816BDY
Abstract: 0757 c16tj
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si4816bdy18-jul-080757c16tj | |
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Contextual Info: SPICE Device Model Si4816BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si4816bdy18-jul-08 | |
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Contextual Info: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5 |
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si4816bdysi4816bdy-t1-e3si4816bdy-t1-ge32011/65/eu+2 | |
SI4816BDY
Abstract: MOSFET SPECIFICATIONS Si4816BDY-T1-E3 Si4816DY-T1-E3 PD1.4 Si4816DY Si4816DY-T1 73294
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si4816bdysi4816dysi4816bdy-t1-e3si4816dy-t1-e3+6 | |
Si4816BDY-T1-GE3
Abstract: Si4816BDY Si4816BDY-T1-E3
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si4816bdy11-mar-11si4816bdy-t1-ge3si4816bdy-t1-e3 | |
74696
Abstract: C 5763 transistor AN609 Si4816BDY 2576-3
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si4816bdyan60905-feb-1074696+2 | |
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Contextual Info: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5 |
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si4816bdy2011/65/eu2002/95/ec12-mar-12 | |
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Contextual Info: Si4816BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 6.8 FEATURES Qg (Typ) D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested |
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si4816bdysi4816bdy--e3si4816bdy-t1--e308-apr-05 | |
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Contextual Info: Si4816BDY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V |
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si4816bdysi4816bdy-t1-e318-jul-08 | |
Diod 0185
Abstract: SI4816BDY-T1-GE3 Si4816BDY Si4816BDY-T1-E3
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si4816bdy18-jul-08diod 0185si4816bdy-t1-ge3+1 | |
4392
Abstract: 74696 1526 3904 transistor AN609 Si4816BDY
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si4816bdyan60909-may-074392+3 | |
Si4816BDYContextual Info: SPICE Device Model Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4816bdys-52214rev24-oct-05 | |
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Si4816BDY-T1-E3Contextual Info: Si4816BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V 9.5 |
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si4816bdysi4816bdy-t1-e3si4816bdy-t1-ge311-mar-11 | |
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Contextual Info: Si4816BDY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V |
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si4816bdysi4816bdy-t1-e308-apr-05 | |
LTC4007-1
Abstract: zener diode 4.2V 0.25W 200W MOSFET POWER AMP 2N7002 MARKING IN4009 4009 circuit examples LTC4009 LTC4412 36V Li-Ion battery charge controller Datasheet ic 4009
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ltc4009ltc4009-1/ltc4009-2550khz20-pin+13 | |
IC 4012 DATASHEET
Abstract: 4012 IC data sheet 2N7002 MARKING LTC4012 dc adaptor 30v HV Charger Reference Design LTC1769 LTC4012-3 ORing diode VC10
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ltc4012-3550khz20-pinltc4413+12 | |
ISL88732
Abstract: SMPS CIRCUIT DIAGRAM lg FN6396 ISL8112 ISL8112IRZ ISL8112IRZ-T TB379 lg SMPS circuit multiple output pc smps pwm design
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isl8112fn6396isl88732smps circuit diagram lg+5 | |
ISL6236
Abstract: TB379 ISL6236IRZA ISL6236IRZA-T
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isl6236100mafn6373tb379+2 | |
RF3833
Abstract: 4TPE220MFC2 BSC035N04LS 25SVPD82M LTC3833 LTC3833EUDC SUNCON capacitor SUNCon me LTC3833E LTC3833EFE
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ltc3833500mv200khz20-pin+14 | |
an1272
Abstract: ISL6236 ISL6236IRZA ISL6236IRZA-T TB347 TB363 TB379
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isl6236100ma5m-1994fn6373+6 | |
24V 10A SMPS
Abstract: 24v 5a smps 5v dc smps an1272 dual high side MOSFET driver with charge pump circuit diagram of mosfet based smps power supply computer smps circuit diagram PAL 0007 E amplificador smps 3.3v 5v smps isolated 5v output
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isl6236a100ma5m-1994fn6453+10 | |
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Contextual Info: LTC3880/LTC3880-1 Dual Output PolyPhase Step-Down DC/DC Controller with Digital Power System Management DESCRIPTION FEATURES PMBus/I2C Compliant Serial Interface – Telemetry Read Back includes VIN, IIN, VOUT, IOUT, Temperature and Faults – Programmable Voltage, Current Limit, Digital |
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ltc3880/ltc3880-1250khz16-bit3880fa | |