MRF8P Search Results

MRF8P Datasheets (27)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MRF8P18265HR6	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF N-CH 1840MHZ 30V NI1230-8	Original	PDF		14
MRF8P18265HSR6	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF N-CH 1840MHZ 30V NI1230S8	Original	PDF		14
MRF8P20100HR3	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF N-CH 2025MHZ 28V NI780H-4	Original	PDF		22
MRF8P20100HSR3	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF N-CH 2025MHZ 28V NI780H-4	Original	PDF		22
MRF8P20100HSR3,128	NXP Semiconductors	RF POWER FIELD-EFFECT TRANSISTOR	Original	PDF	1.3MB
MRF8P20140WGHSR3	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, TRANS RF LDMOS 28V 500MA NI780S-	Original	PDF		17
MRF8P20140WHR3	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 500MA NI780-4	Original	PDF		17
MRF8P20140WHR5	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 500MA NI780-4	Original	PDF		17
MRF8P20140WHSR3	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 500MA NI780S-4	Original	PDF		17
MRF8P20140WHSR5	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 500MA NI780S-4	Original	PDF		17
MRF8P20161HSR3	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-780S	Original	PDF		13
MRF8P20165WHR3	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 550MA NI780-4	Original	PDF		16
MRF8P20165WHR5	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 550MA NI780-4	Original	PDF		16
MRF8P20165WHSR3	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 550MA NI780S4	Original	PDF		16

MRF8P20165WHSR5	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 550MA NI780S4	Original	PDF		16
MRF8P23080HR3	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF N-CH 2.3GHZ 28V NI780-4	Original	PDF		15
MRF8P23080HSR3	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF N-CH 2.3GHZ 28V NI780S-4	Original	PDF		15
MRF8P23160WHR3	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF N-CH 28V 2.4GHZ NI780-4	Original	PDF		13
MRF8P23160WHSR3	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF N-CH 28V 2.4GHZ NI780-4	Original	PDF		13
MRF8P9040GNR1	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN TO-270	Original	PDF		23

MRF8P Price and Stock

Filter by Manufacturer

NXP Semiconductors


NXP Semiconductors MRF8P8300HR6 RF MOSFET LDMOS 28V NI1230
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF8P8300HR6	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NXP Semiconductors MRF8P29300HR6 RF MOSFET LDMOS 30V NI1230
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF8P29300HR6	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	MRF8P29300HR6	Reel			150	1 - 10 - 100 - 1000 $1206.90 10000 $1186.44	Buy Now
Newark	MRF8P29300HR6	Bulk			1	1 $1471.47 10 $1430.31 100 $1347.99 1000 $1347.99 10000 $1347.99	Buy Now
Rochester Electronics	MRF8P29300HR6		23		1	1 $1230.86 10 $1230.86 100 $1157.01 1000 $1083.16 10000 $1083.16	Buy Now
NXP Semiconductors MRF8P8300HSR5 RF MOSFET LDMOS 28V NI1230
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF8P8300HSR5	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	MRF8P8300HSR5		1,950			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NXP Semiconductors MRF8P9040NBR1 RF MOSFET LDMOS 28V TO272-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF8P9040NBR1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NXP Semiconductors MRF8P20160HR3 RF MOSFET LDMOS 28V NI780
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF8P20160HR3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more MRF8P price and stock on Findchips.com

MRF8P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20161HS MRF8P20161HSR3	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with	Original	MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6	PDF
ATC600F0R1BT250XT Contextual Info: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for	Original	MRF8P18265H MRF8P18265HR6 MRF8P18265HSR6 ATC600F0R1BT250XT	PDF
MRF8P20140WH/HS Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WH/HS	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth	Original	MRF8P23160WH MRF8P23160WHR3 MRF8P23160WHSR3 MRF8P23160WHR3	PDF
NI-1230-4H Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 NI-1230-4H ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS	PDF
ATC100B390JT500XT Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with	Original	MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 92ficers, MRF8P9300H ATC100B390JT500XT ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X	PDF
MRF8P9040N Abstract: mrf8p ATC100B820JT RO4350B Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for	Original	MRF8P9040N MRF8P9040NR1 MRF8P9040NBR1 728-its MRF8P9040N mrf8p ATC100B820JT RO4350B	PDF
mosfet J442 Abstract: ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20161HS MRF8P20161HSR3 mosfet J442 ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3	PDF
CW12010T0050GBK Abstract: J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to	Original	MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3 CW12010T0050GBK J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical	Original	MRF8P23080H MRF8P23080HR3 MRF8P23080HSR3	PDF
ATC600S10 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth	Original	MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WHR3 ATC600S10	PDF
ATC600F100JT250XT Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT	PDF

MRF8P182 Abstract: ATC600F0R1BT250XT atc600f150jt250xt Contextual Info: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for	Original	MRF8P18265H MRF8P18mployees, MRF8P18265HR6 MRF8P18265HSR6 MRF8P18265H MRF8P182 ATC600F0R1BT250XT atc600f150jt250xt	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 MRF8P8300HR6	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P9210N MRF8P9210NR3	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to	Original	MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for	Original	MRF8P9040N MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1	PDF
MRF8P20140WHS Abstract: mrf8p20140 J473 MRF8P20140W Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WHS mrf8p20140 J473 MRF8P20140W	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8P26080H MRF8P26080HR3 MRF8P26080HSR3 MRF8P26080HR3	PDF
ATC100B Abstract: ATC100B1R0JP500XT KME63VB471M MRF8P9300H AN1955 MRF8P9300HR6 MRF8P9300HSR6 ATC100B200JT500XT ATC100B0R8JP500XT Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with	Original	MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6 ATC100B ATC100B1R0JP500XT KME63VB471M MRF8P9300H AN1955 MRF8P9300HSR6 ATC100B200JT500XT ATC100B0R8JP500XT	PDF
ATC600S2R7BT250XT Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth	Original	MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WH ATC600S2R7BT250XT ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT	PDF
GSC356-HYB2500 Abstract: MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8P26080H MRF8P26080HR3 MRF8P26080HSR3 MRF8P26080HR3 GSC356-HYB2500 MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625	PDF

MRF8P Search Results

MRF8P Datasheets (27)

MRF8P Price and Stock

NXP Semiconductors MRF8P8300HR6

NXP Semiconductors MRF8P29300HR6

NXP Semiconductors MRF8P8300HSR5

NXP Semiconductors MRF8P9040NBR1

NXP Semiconductors MRF8P20160HR3

MRF8P Datasheets Context Search

ATC600F0R1BT250XT

MRF8P20140WH/HS

NI-1230-4H

ATC100B390JT500XT

MRF8P9040N

mosfet J442

CW12010T0050GBK

ATC600S10

ATC600F100JT250XT

MRF8P182

MRF8P20140WHS

ATC100B

ATC600S2R7BT250XT

GSC356-HYB2500