ATC600S10 Search Results

Contextual Info: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA

140-A525-SMD

Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa
Contextual Info: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

ATC600S100JW

Abstract: m 53206 ATC600S100J MCR10EZHF49R9 ECD-G0ER709 ECD-G0ER909 GRM2165C2A71JA01D GRM2195C2A102JA01D RO4350 PFQN-16
Contextual Info: RoHS Compliant 3.4—3.8 GHz 10 W Power PHEMT Advanced Datasheet Oct. 10, 2005 MAAP-003438-010PP0 Package PFQN-16 Lead Features • This RF Power transistor is an unmatched GaAs PHEMT which exhibits high gain and linearity performance in a lead-free 3mm 16-lead PQFN

ATC600S10

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth

HEADER7X2

Abstract: 915055 circuit diagram for sma 4038 ic sma 4038 capacitor 10nj MURATA-LQH32MN sma003 BMIS-203 ATC600S0R 6CW2
Contextual Info: Dolphin Frequency Hopping Spread Spectrum Evaluation Kit Hardware and Software User’s Guide 2005 SLLU090F IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

ATC600S2R7BT250XT

Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth

426-49

Abstract: 293D105X9050C2T GRM2165C2A71JA01D GRM2195C2A102JA01D RO4350 T491D226M035AS MAAP-003438-005PP0
Contextual Info: RoHS Compliant 3.4—3.8 GHz 5 W Power PHEMT Advanced Datasheet Nov 28, 2005 MAAP-003438-005PP0 Package PFQN-16 Lead Features • This RF Power transistor is an unmatched GaAs PHEMT which exhibits high gain and linearity performance in a lead-free 3mm 16-lead PQFN

Msp430U

Abstract: 915055 MSP430U275 TRF6903 MSP430 MSP430C1351 MSP430F135 BMI-S-205 4P SOT323 sip-6p
Contextual Info: Dolphin Frequency Hopping Spread Spectrum Evaluation Kit Hardware and Software User’s Guide 2004 SLLU090 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

A55167

Abstract: MSWSH-100-30
Contextual Info: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA