ATC600F1R1BT250XT Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

mosfet J442

Abstract: ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

CW12010T0050GBK

Abstract: J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to

Contextual Info: Document Number: MMRF2006N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier MMRF2006NT1 The MMRF2006N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage

CW12010T0050GBK

Abstract: CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550
Contextual Info: Document Number: MRF8P20160H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2020N Rev. 1, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MW7IC2020NT1 The MW7IC2020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage

ATC600F330JT250XT

Abstract: J706 W5043 J-104 J420
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2020N Rev. 0, 1/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC2020NT1 The MW7IC2020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2020N Rev. 0, 1/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC2020NT1 The MW7IC2020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage

hitachi rf ldmos

Abstract: MMG15241H crcw120610k0fkea
Contextual Info: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design MMG15241H Driving MD7IC2250N W-CDMA RF Power Amplifier Lineup GaAs E-pHEMT Driving RF LDMOS Amplifier Lineup Characteristics