GAAS FET MICRO-X PACKAGE Search Results

rogers* RO4003C

Abstract: mgf1941 gaas fet micro-X Package marking 137 marking Micro-X MGF1941AL gaas fet micro-X GD-32 gaas fet micro-X Package gaas fet marking J r338
Contextual Info: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB Typ. @ f=12GHz APPLICATION Fig.1

gaas fet marking J

Contextual Info: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB Typ. @ f=12GHz APPLICATION Fig.1

gaas fet micro-X Package marking

Abstract: gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
Contextual Info: < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES FETis designed for use in S to Ku band amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION Fig.1 S to Ku band low noise amplifiers

UPG2117K

Abstract: UPG2118K J FET RF Cascode Input upg2118
Contextual Info: NEC's VERSATILE 3V GSM UPG2117K GaAs MMIC POWER AMPLIFIER FEATURES DESCRIPTION • E-MODE HJ-FET TECHNOLOGY/SINGLE POSITIVE SUPPLY VOLTAGE • LOW VOLTAGE OPERATION: VDD = +3.2 V • HIGH EFFICIENCY: PAE = 57% TYP • 20 PIN 4 X 4 MM SQUARE MICRO LEAD PACKAGE

NE3517S03

Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS

NE3517S03-A

Abstract: NE3517S03-T1C NE3517S03 HS350
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS

NE3520S03

Abstract: nE352
Contextual Info: Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA • K band Micro-X plastic S03 package

Contextual Info: bbE d MICROÜIAVE TECHNOLOGY • biE m ao ooooebü a m hm riiiv MwT - 6 18 GHz High Power GaAs FET MicroWave Technology n p 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES n I— I r ■ n 100 IsoJ Is o i I— 130—1 is o l Is J

MGF1200

Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.

Contextual Info: SDA-2000 SDA-2000 GaAs Distributed Amplifier Package: Die, 3.1mm x 1.45mm x 0.102mm RFMD’s SDA-2000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They

Contextual Info: SDA-6000 SDA-6000 GaAs Distributed Amplifier Package: Die, 2.21mm x 1.21mm x 0.102mm RFMD’s SDA-6000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high

104208

Abstract: GSM repeater power amplifier module AN054 1042-08 SDM-08060-B1F high power fet amplifier schematic EDS-104208 SDM-08060
Contextual Info: SDM-08060-BIF Y SDM-08060BIF(Y)869 MHz to 894 MHz Class AB 65 W Power Amplifier Module 869 MHz to 894 MHz CLASS AB 65 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: B Product Description Features

Contextual Info: SDA-7000 SDA-7000 GaAs Distributed Amplifier Package: Die, 2.40mm x 1.21mm x 0.102mm RFMD’s SDA-7000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high

SDM-09060-B1F

Abstract: TRANSISTORS BJT with low gate voltage NOTE-AN054
Contextual Info: SDM-09060-B1F Y SDM-09060B1F(Y)Low Noise, High Gain SiGe HBT 925 MHz to 960 MHz CLASS AB 65 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: B Product Description Features „ „ „ Available in RoHS Compliant

Rf6652

Contextual Info: RF6652Power Management IC RF6652 Proposed POWER MANAGEMENT IC Package: 12-Bump WLSCP, 4 x 3 Array 1.65mm x 1.25mm VEN_PA1 VEN_PA2 VEN_PA3 VEN_PA4 VMODE1 VMODE0   Digital Mode Control Compatibility VPWR Reference Voltage Generator Control Logic Features

RF6652

Abstract: HPM 15 smps dc-dc circuits
Contextual Info: RF6652A Power Management IC RF6652A Proposed POWER MANAGEMENT IC Package: 12-Bump WLSCP, 4 x 3 Array 1.65mm x 1.25mm VEN_PA1 VEN_PA2 VEN_PA3 VEN_PA4 VMODE1 VMODE0   Digital Mode Control Compatibility VPWR Reference Voltage Generator Control Logic Features

SLD-1083CZ

Abstract: GaN Bias 25 watt SLD1083CZ InP transistor HEMT 600S680JT250XT
Contextual Info: SLD-1083CZ SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package 4 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: RF083 Product Description Features „ „ „ 4 Watt Output P1dB Single Polarity Supply Voltage

Contextual Info: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of

SUF-8533

Abstract: gp bjt
Contextual Info: SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier SUF-8533 Preliminary DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier

SUF-8533SR

Abstract: pHEMT operating junction temperature DS110718
Contextual Info: SUF-8533 SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier

SLD-3091FZ

Abstract: SLD3091FZ GaN Bias 25 watt InP transistor HEMT 915 MHz RFID 27PF A191 22UF
Contextual Info: SLD-3091FZ 30 Watt Discrete LDMOS FET in Ceramic Flanged Package SLD-3091FZ Preliminary 30 WATT DISCRETE LDMOS FET IN CERAMIC FLANGED PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: A191 Product Description Features „ „ „ 30 Watt Output P1dB

RF6650

Abstract: LQM2HPN2R2MG0L material declaration taiyo yuden smps dc-dc circuits Material Declaration MURATA
Contextual Info: RF6650 POWER MANAGEMENT IC Package: 8-Bump WLCSP, 3x3 Array, 1.58mm x1.57mm Features          VPWR C3 A1 RF6650 AGND High Efficiency >95% Transient Response <25s 650mA Load Current Capability Programmable Output Voltage Bypass FET

RF6280

Abstract: RD6280
Contextual Info: RF6280 Preliminary POWER MANAGEMENT IC Package Style: 15-Bump WLCSP, 4 x 4 Array, 2 mm x 2 mm Features „ „ „ „ „ „ „ „ „ „ „ „ „ Peak Efficiency Up To 96% High Efficiency Over Various Loads Transient Response < 10 s 650 mA Current Capability

Material Declaration MURATA

Contextual Info: RF6650 POWER MANAGEMENT IC Package: 8-Bump WLCSP, 3x3 Array, 1.58mm x1.57mm Features          VPWR C3 A1 RF6650 AGND High Efficiency >95% Transient Response <25s 650mA Load Current Capability Programmable Output Voltage Bypass FET