G7E DIODE Search Results

LS168

Abstract: Ls168up
Contextual Info: S G S-THOMSON G7E D | TTEIEB? DGlbiai 3 | '•1 LOW POWER SCHOTTKY Ift i ^ T54LS168/169 * j[> S i > T74LS168/1691 INTEGRATED CIRCUITS - 67C 16260 D T SYNCHRONOUS BI-DIRECTIONAL COUNTERS LS168-BCD DECADE LS169-MODULO 16 BINARY

SGSP211

Abstract: sgsp312 P512 74c74 P312 Diode D7E
Contextual Info: s G S-T H O H SO N G7E : 73C D I 1 7 3 j> 7 7121237 D DÜ 17SSQ 7 T ~-3?-/r_ SGSP211/P212 SGSP311/P312 ? SGSP511/P512 N-CHANNHL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

sef710

Contextual Info: S G S-THONSON G7E D | 7 ^ 2 3 7 QUJ.flD37 D 1 .7 5 3 4 X Z .?y ^ °^ . SEF7I0 i ^ "» jL \ SEF71J . '\ •U\ . ^ SEF712 J N-CHANNEL POWER MOS TRANSISTORS - .Sim3 . i 73C D. HIGH SPEED SWITCHING APPLICATIONS T h e se p roducts are diffused multi-cell silicon gate

Contextual Info: s g S-THOMSON G7E D g 7^237 DDlbWO? LOW POWER SCHOTTKY INTEGRATED CIRCUITS I I54LS682 T74LS682 6 7 C 16 5 36 T -4 -5 H 7 PRELIMINARY DATA 8-B IT M AGNITUDE COMPARATOR DESCRIPTION The T54LS682/T74LS682 is 8-Bit Magnitude Com­ parator. This device is designed to perform com­

SGSP474

Abstract: SEFH7N45
Contextual Info: ^ B S 3 S G S-THOMSON G7E D 73C 17558 _ T I I p i N-CHANNEL POWER MOS TRANSISTORS H IG H SPEED S W IT C H IN G A P P L IC A T IO N S These products are diffused multi^celi silicon gate N-Channe! enhancement mode Power-Mos field effect transistors. B 9 7^153?

sef720

Abstract: 20V3A
Contextual Info: S G S-TH0Ï1SÔN G7E 73C 712=1537 D 17538 : .0 .{ ? s h ; •V î S '• ‘i l 1 1 : î N-CHANNEL POWER MOS TRANSISTORS ODlflOm r ~ 3 f '/ / SEF720 SEF721 SEF722 SEF723 HIGH S P EE D SW ITCH IN G A P P LIC A TIO N S V DSS These products are diffused multi-cell silicon gate

G7E Diode

Contextual Info: S G S-THOUsON 07E D | 7 ^ 5 3 7 Q01ST5D 1 | LOW POWER SCHOTTKY INTEGRATED CIRCUITS T74LS33 67C D 15075 7 ^ 3 -/S" QUAD 2-INPUT NOR BUFFER DESCRIPTION The T54LS33/T74LS33 is a high speed QUAD 2-INPUT NOR BUFFER fabricated in LOW POWER SCHOTTKY technology. t

C17K

Abstract: T74LS175B1 ic17k T74LSI
Contextual Info: G S S-THOMSON 07E D I 7 ^ 2 3 7 67C T54LS175 ' T74LS175 ìn « # Q 0 lb lS 2 16 2 31 I LOW POWER SCHOTTKY INTEGRATED CIRCUITS DESCRIPTION The LSTTL/M SI T54LS175/T74LS175 is a high speed Quad D Flip-Flop. The device is useful for general flip-flop requirements where clock anc clear

Q01t

Contextual Info: S G S-THOnSON D7E D | 7 ^ 2 3 7 if* 00lb3bû 1 | 1 LOW POWER SCHOTTKY I a INTEGRATED CIRCUITS 67C 15497 D T-66-21-51 QUAD 2-PORT REGISTER DESCRIPTION The T54LS/T74LS398/399 are Quad 2-Port Regi­ sters. They are the logical equivalent of a quad 2-input multiplexer followed by a 4-bit edgetriggered register. Selection between two 4-bit in­

35N06

Abstract: C293 SEFH35H06 G7E Diode SEFH35N05
Contextual Info: S G S-THÔMSÔN Q?E D 73C 1 7 5 6 8 7c15ciE37 OOlfl071 □ D T v^ -U » SEFH35N05 SEFH35H06 SEFM35N05 SEFH35N06 W ' i l H N -G H A N N El POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

SGS30DA070D

Abstract: 57558 SGS30DA060D 19002D SGS30DA060 SGS30D
Contextual Info: S G S-THOilSON D7E D I TRANSPACK NPN POWER DARLINGTON 19001 m o dule APPLICATIONS: 7^237 These products are silicon NPN power dariingtons for industrial switching applications with three-phase mains operation. FAST FREEWHEEL DIODE ISOLATED POWER MODULE 30KVA - 375W

sef530

Abstract: SEF532 SEF531 60v 9A c243s
Contextual Info: S G'S-THOMSON. 0 7 E 73C D 17*12*1237 17518 D •\ ' T N-CHANNEL POWER MDS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N'Channel enhancement mode Power-Mos field effect transistors. A B SO LU TE MAXIMUM RATINGS

c303 diode

Abstract: 5N35 SEFM4N45
Contextual Info: S G S-TH0NS0N D?E 73 C 17579 SEFM4N45/SEFP4N45 SEFM5N35/SEFP5N3S SEFM5N40/SEFP5N40 7 eI2 t1237 QOlâQflS 4 D | D ~ N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

p217s

Abstract: p317 w55c p217 ic 17358 17356 C82 to-220 DIODE C06 15 C82J W25-C
Contextual Info: S G S-THOnSON D7E 1 73C 1 7 355 SGSP216/P2I7 1 SGSP316/P317 ] SGSP516/P517 ; HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V DGR V qs Id Idlm •! P.0« "^stg Tl o Q01?flSû 1 T 3 9 - / / N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cell silicon gate

T74LS266B1

Contextual Info: S G S-THOMSON Ü 7 E D I 7^2^237 QDlti2Lil 5 J LOW POWER SCHOTTKY INTEGRATED CIRCUITS Ai - 67C16390 T54LS266 T74LS266 Ì T -tz -tS D QUAD 2-INPUT EXCLUSIVE NOR GATE DESCRIPTION The T54LS266/T74LS266 Is a high speed QUAD

165-V4

Contextual Info: S G S-TWOHSON 07E D | 7 ^ 2 3 7 I 0 0 ] , s f l =]3 LOW POWER SCHOTTKY INTEGRATED CIRCUITS - s - '•wsssfäsM ‘ 67C 16018 D T -j‘3-/5' QUAD 2-INPUT AND GATE DESCRIPTION The T54LS09/T74LS09 is a high speed QUAD 2-INPUT AND GATE WITH OPEN COLLECTOR

D 16027 G

Abstract: 165-V4
Contextual Info: s G S - T H O H S O N 0?E D | 7 ^ 5 3 7 □ 0 1 5 CID5 1 I LOW POWER SCHOTTKY iT 7 4 L S 1 2 INTEGRATED CIRCUITS ^ 6 7C 16027 T~42>-/S _ PRELIMINARY DATA TRIPLE 3-INPUT NAND GATE DESCRIPTION The T54LS12/T74LS12 is a high speed TRIPLE 3-INPUT NAND GATE with open collector output

T74LS03B1

Contextual Info: S G S-THONSON 07E D | 7 ^ 2 3 ' OpiSôôl ô | LOW POWER SCHOTTKY f INTEGRATED CIRCUITS fk S- _ ._ • 67C 15006 * ^ D T -¥ 3 -/5 ' QUAD 2-INPUT NAND GATE 's. DESCRIPTION The T54LS03/T74LS03 is a high speed QUAD 2-INPUT NAND GATE fabricated in LOW POWER

BU930P

Abstract: BU930 350v ZENER DIODE BU930Z BU930ZP SOT93 package car ignition
Contextual Info: S G S-THOnSON 07E D | 7 ^ 5 3 7 67C 15 0 3 2 0017130 D b | T-33-29 MULTI EPITAXIAL BIPLANAR NPN P R E L IM IN A R Y D A T A NPN POWER D A R L IN G T O N S The B U 9 3 0 Z and B U 9 3 0 Z P are silicon N P N multiepitaxial biplanar darlingtons respectively

SGS911

Abstract: IC 638S SGS910 BU911 1421sg S912 638s
Contextual Info: S-THOMSON 0 7 E D | 7=12^537. 0 0 1 7 4 4 0 4 | 6 7C 15 350 D T-33-29 MULT1EPITAXIAL PLANAR NPM H IG H V O L T A G E P O W E R D A R L IN G T O N S The S G S9 1 0 , S G S 9 1 1, S G S 9 1 2 and B U 910, B U 9 1 1, B U 9 1 2 are silicon multiepitaxial planar

LS93

Contextual Info: S/G S - T H O n S O N D7E D | 7 ^ 5 3 7 DOlbOOl 1 I LOW POWER SCHOTTKY INTEGRATED CIRCUITS T74LS90/92/93 67 C 1 6 1 2 9 D y . ¿ /S '3 3 '/ 3 LS90 DECADE COUNTER LS92 D IVIDE-BY-TW ELVE COUNTER LS93 4-B IT BINARY COUNTER DESCRIPTION The T54LS90/T74LS90, T54LS92/T74LS92 and

Contextual Info: S G S-THOMSON 0?E D I T54LS386 1 "J J te -T74LS386 . 4 7^237 Ü Q l t 3 S a fi I LOW POWER SCHOTTKY INTEGRATED CIRCUITS >- 67 C16 4 81 D —- T f 3 “/5‘ - HRELIMINARY DATA QUAD 2-INPUT EXCLUSIVE-OR GATE DESCRIPTION The T54LS386/T74LS386 is a high speed QUAD

Contextual Info: S G S- TH OM SON 0?E D | 7^51237 O Q I S W LOW POWER SCHOTTKY INTEGRATED CIRCUITS - - ;- 67C û | V K If 15084 T74LS4Q 7 -V 3 - / S D DUAL 4-INPUT NAND BUFFER DESCRIPTION The T54LS40/T74LS40 is a high speed DUAL

Contextual Info: s g s - t h <x i s o n o ? e î> | TiaisB? oois^àô a | -« j ÿ ' v i  î i ï LOW POWER SCHOTTKY INTEGRATED CIRCUITS 67C 16053 D T-V3-/5 DUAL 4-INPUT NAND GATE DESCRIPTION The T54LS22/T74LS22 is a high Speed DUAL 4-INPUT NAND GATE fabricated in LOW POWER