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    35N06

    Abstract: C293 SEFH35H06 G7E Diode SEFH35N05
    Contextual Info: S G S-THÔMSÔN Q?E D 73C 1 7 5 6 8 7c15ciE37 OOlfl071 □ D T v^ -U » SEFH35N05 SEFH35H06 SEFM35N05 SEFH35N06 W ' i l H N -G H A N N El POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		oolfl071sefh35n05sefh35h06sefm35n05+7sefh35n060v/60v35n06sgsp491c-293c293g7e diode PDF

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Contextual Info: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


    OCR Scan     		irf510irf511irf512irf513+16irf520irf521irf522irf523irf610irf611irf740 "direct replacementirf9640 replacement guideirf9540 replacementirf640 irf5102sk350 hitachiirf9613rca9213abuz11 cross referencesgsp467fu120 PDF