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35N06 Abstract: C293 SEFH35H06 G7E Diode SEFH35N05 Contextual Info: S G S-THÔMSÔN Q?E D 73C 1 7 5 6 8 7c15ciE37 OOlfl071 □ D T v^ -U » SEFH35N05 SEFH35H06 SEFM35N05 SEFH35N06 W ' i l H N -G H A N N El POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field	OCR Scan	oolfl071 sefh35n05 sefh35h06 sefm35n05 +7sefh35n06 0v/60v 35n06 sgsp491 c-293 c293 g7e diode	PDF

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35N06

Abstract: C293 SEFH35H06 G7E Diode SEFH35N05
Contextual Info: S G S-THÔMSÔN Q?E D 73C 1 7 5 6 8 7c15ciE37 OOlfl071 □ D T v^ -U » SEFH35N05 SEFH35H06 SEFM35N05 SEFH35N06 W ' i l H N -G H A N N El POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

OCR Scan

oolfl071 sefh35n05 sefh35h06 sefm35n05 +7

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