G30N6
Abstract: 27N60C3DR
Contextual Info: [ /Title HGT G27N6 0C3D R /Subject (54A, 600V, Rugged UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche HGTG27N60C3DR CT ODU ODUCT R P PR TE OLE UTE OBS UBSTIT 0B3D E S G30N6
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g30n60
Contextual Info: G30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The G30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at
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G30N60
Abstract: TA49053 TA49172 TA49170 G30N60B3 G30N60B3D HGTG30N60B3D LD26 HGTG30N60b 200pulse
Contextual Info: G30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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G30N60A4
Abstract: HGTG30N60A4 IGBT G30N60A4 g30n60a smart ups 750 circuit g30n60 247A03
Contextual Info: G30N60A4 Data Sheet April 2013 600V SMPS IGBT Features The G30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high
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hgtg30n60a4ta49343o-247g30n60a4+5igbt g30n60a4g30n60asmart ups 750 circuitg30n60247a03
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g30n60c3d
Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
Contextual Info: G30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The G30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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g30n60hs
Abstract: g30n60 SGW30N60HS 1A20A
Contextual Info: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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NGTG30N60FLWG
Abstract: G30N60FL G30N60F
Contextual Info: G30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
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G30N60F
Abstract: g30n60 NGTG30N60FWG
Contextual Info: G30N60FWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
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G30N60B3
Abstract: G30N60 G30N60B3 hARRIS TA49170 G30N60B
Contextual Info: G30N60B3 S E M I C O N D U C T O R 60A, 600V, UFS Series N-Channel IGBT January 1998 Features Description • 60A, 600V, TC = 25oC The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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No 42 G30N60C3D
Abstract: g30n60c3d HGTG30N60C3D LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C
Contextual Info: G30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss
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G30N60B3
Abstract: TA49170
Contextual Info: G30N60B3 Data Sheet April 2013 600 V, NPT IGBT Features The G30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where
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G30N60
Abstract: G30N60C3 G30N60C3S HGTG SC-15 HGT4E30N60C3S HGTG30N60C3 LD26 RHRP3060 TA49051
Contextual Info: G30N60C3, HGT4E30N60C3S Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The G30N60C3 and HGT4E30N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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g30n60
Abstract: g30n60c3d RHRP3060 TA49051 TA49053 HGTG30N60C3D
Contextual Info: G30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The G30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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G30N60
Abstract: TA49051 G30N60C3 HGTG30N60C3 LD26 RHRP3060 igbts
Contextual Info: G30N60C3 Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The G30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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G30N60B3D
Abstract: G30N60 G30N60B3 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
Contextual Info: G30N60B3D Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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g30n60
Abstract: G30N60 IGBT equivalent to g30n60 1 L 0380 PG-TO-263-3-2 SGB30N60 30mJ
Contextual Info: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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sgb30n60pg-to-263-3-2o-263abg30n60+4g30n60 igbtequivalent to g30n601 l 038030mj
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G30N60
Abstract: TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC
Contextual Info: in t e G30N60B3D r r ii J a n u a ry . m D ata S h eet 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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hgtg30n60b3dta49170ta49053g30n60+7g30n60b3dg30n60b3ta49172transistor c110transistor no c110lg 631lg 631 ic
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G30N60C3
Abstract: igbt g30n60c3 HGTG30N60C3 LD26 RHRP3060 TA49051
Contextual Info: G30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The G30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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g30n60a4
Abstract: g30n60a IGBT G30N60A4 TA49343 G30N60A4 transistor g30n60 12V 30A diode HGTG30N60A4 TA49373 ICE 280
Contextual Info: G30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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hgtg30n60a4150oc100khz200khz+10125ocg30n60a4g30n60aigbt g30n60a4ta49343g30n60a4 transistorg30n6012v 30a diodeta49373ice 280
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G30N60A4
Abstract: G30N60A G30N60 IGBT G30N60A4 TA49343 TA49373 HGTG30N60A4 G30N60A4 transistor LD26
Contextual Info: G30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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g30n60a4
Abstract: IGBT G30N60A4 G30N60A HGTG30N60A4 TA49343 G30N60A4 transistor LD26 TA49373
Contextual Info: G30N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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G30N60B3D
Abstract: HGTG30N60B3D TA49172
Contextual Info: G30N60B3D Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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g30n60b3
Abstract: HGTG30N60B3
Contextual Info: G30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The G30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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G30N60
Abstract: G30N60 IGBT g30n60 infineon SGW30N60 PG-TO-220-3-1 IGBT 400V 100KHZ 30A igbt 600V 30A
Contextual Info: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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