G30N60F Search Results
G30N60F Price and Stock
onsemi NGTG30N60FLWGIGBT, PFC, High Frequency, 30 A, 600 V - Rail/Tube (Alt: NGTG30N60FLWG) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NGTG30N60FLWG | Tube | 480 |
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NGTG30N60FLWG | 8,160 | 1 |
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NGTG30N60FLWG | 150 |
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NGTG30N60FLWG | 9,272 |
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onsemi NGTG30N60FWGIGBT, 600 V, 30 A, PFC, Low Frequency - Rail/Tube (Alt: NGTG30N60FWG) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NGTG30N60FWG | Tube | 270 |
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NGTG30N60FWG | 580 |
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NGTG30N60FWG | 8,039 |
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G30N60F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NGTG30N60FLWG
Abstract: G30N60FL G30N60F
|
Original |
ngtg30n60flwg100ablengtg30n60flw/dg30n60fl+1 | |
G30N60F
Abstract: g30n60 NGTG30N60FWG
|
Original |
ngtg30n60fwgngtg30n60fw/dg30n60fg30n60 | |
G30N60FLContextual Info: G30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. |
Original |
ngtg30n60flwg100ablengtg30n60flw/dg30n60fl | |
G30N60FLContextual Info: G30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. |
Original |
ngtg30n60flwgngtg30n60flw/dg30n60fl |