G1740 Search Results

G1736

Abstract: G1735 G1737 G1738 G1740 G3297
Contextual Info: PHOTODIODE GaAsPフォトダイオード 拡散型 赤感度延長タイプ 特長 用途 l 低暗電流 l 高安定性 l 赤感度延長タイプ l 分析機器 l 色識別 • 一般定格／絶対最大定格 型名 G1735 G1736 G1737 G1738 G1740 G3297 外形

G1125-02

Abstract: S2216 02 S1863 G1126-02
Contextual Info: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length

hamamatsu S875

Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
Contextual Info: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size

G1735

Abstract: G1736 G1737 G1738 G1740 G3297
Contextual Info: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings

Contextual Info: GaAsP Photodiodes Diffusion Types - Type No. I Dimensional Outline (P.46 to 53)/ Window Material '1 Area X Peak Sensitivity Wavelength ^p (mm2) (nm) (nm) Effective Active Active Package Area Size (mm) Spectral Response Range Photo Sensitivity S (A/W)

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

D174D

Abstract: 83C452 80C452-1
Contextual Info: UPI-452 CHMOS PROGRAMMABLE I/O PROCESSOR 83C452 - 8K x 8 Mask Programmable Internal ROM 80C452 - External ROM/EPROM • 83C452/80C452:3.5 to 14 MHz Clock Rate ■ Software Compatible with the MCS-51 Family ■ 128-Byte Bi-Directional FIFO Slave Interface ■ Two DMA Channels

S1722-01

Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
Contextual Info: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR

G1735

Contextual Info: GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications Low dark current Analytical instruments High stability Color identification Red sensitivity extended type Structure / Absolute maximum ratings Type no. G1735 G1736 G1737 G1738

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2756GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. 8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1

Contextual Info: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current

photodiode

Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Contextual Info: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

G1735

Abstract: G1736 G1737 G1738 G1740 G3297 Borosilicate Hamamatsu G1735
Contextual Info: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings

G1961-01

Abstract: G1962-01 S1190 hamamatsu g1962 S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ
Contextual Info: HAMAMATSU liE CÔRP D • 422=^0=1 Q002S3ti S ■ T ^ 4 \ - S \ GaP Photodiodes Photosensitive surface Spectral Response Outline. Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) 190-520 440+30 Characteristics (25°C)

g1962-01

Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
Contextual Info: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt

Hamamatsu G1735

Abstract: G1735
Contextual Info: GaAsP photodiodes Diffusion type Red sensitivity extended type Features Applications Low dark current Analytical instruments High stability Color identification Red sensitivity extended type Structure / Absolute maximum ratings Type no. Dimensional outline/

S1133-02

Abstract: S1133-11 S1133-03 S2216 02 S2164 S1190 hamamatsu S1087 Hamamatsu S1087 light S2357 Hamamatsu S1133
Contextual Info: HAMAMATSU Silicon CORP 1TE D • 42SU0*! 00 DE S 2t . 5 ■ 'p*|-S\ P h O tO d lO d e S Visible Light/Visible Light to IR Photometry Photosensitive surface Spectral Response Outlines Type No. Features S1087-01 For visible light to near IR S1087 For visible light

G1122

Abstract: G1118 G1117
Contextual Info: HAMAMATSU CORP tn DE ODOaDDb T GaAsp Photodiodes 422J96Û 9 HAM AM ATSU 890 CORP Photosensitive Surface Spectral Response T *- H i - 5" I Characteristics 25°C Package (mm) (mm2) (nm) (nm) Short Circuit Current Peak Wave­ length 560nm • GaP LED lsh, 1(