G03D4 Search Results

BUK416-100AE

Abstract: YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x
Contextual Info: N AMER P H I L I P S / D I S C R E T E L^E D • G03D440 DET HIAPX Product Specification Philips Semiconductors BU K416-1OOAE/BE PowerM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device Is intended for use in

Contextual Info: / CYPRESS PRELIMINARY W150 440BX AGPset Spread Spectrum Frequency Synthesizer Features Table 1. Mode Input Table • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Single chip system frequency synthesizer for Intel 440BX AGPset

Contextual Info: ADV MICRO MEMORY MAE D • 0257550 00303^0 S ■AN»4 T -4 6 -1 3-29 Am27C010 Advanced Micro Devices 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Easy upgrade from 28-Pin JEDEC EPROMs ■ Fast access time—100 ns ■ Low power consumption:

D0304

Abstract: T-46
Contextual Info: ADV MI CRO MEMORY 4ÖE 02S7S2Ö J> 003D4S3 h • AMD4 T - 46-13-29 Advanced Micro Devices A m 2 7 C 1 0 2 4 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrite programming ■ Fast access tim e — 100 ns ■ Low power consumption:

Contextual Info: ID C/Edgecard/Printed Circuit Connectors Quick Selection Chart Insulation Displacement Connectors Num ber of C o n t a c ts C o n ta c t A rra n g e m e n t C o n ta c t M a te ria l C o n ta c t F in ish In s u la to r M a te ria l C o n ta c t C e n te rs

Contextual Info: KM416C1204BT CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power