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    D0304

    Abstract: T-46
    Contextual Info: ADV MI CRO MEMORY 4ÖE 02S7S2Ö J> 003D4S3 h • AMD4 T - 46-13-29 Advanced Micro Devices A m 2 7 C 1 0 2 4 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrite programming ■ Fast access tim e — 100 ns ■ Low power consumption:


    OCR Scan     		02s7s2003d4s3t-46-13-29am27c1024+616-bit40-pin0d304l06780-009ed0304t-46 PDF

    BUK417-500AE

    Abstract: BUK417-500B 500ae BUK417-500BE BUK417
    Contextual Info: bTE D N AMER P HI LI PS/ DIS CRE TE • bbSBRBl GD3DMS0 T7R * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor ¡n ISOTOP envelope. The device is intended for use in


    OCR Scan     		buk417-500ae/beot227bbuk417-500ae+5-500bebuk417-500aebuk417-500b500aebuk417-500be PDF