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    500AE Search Results

    500AE Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TS3L500AERHUR
    Texas Instruments 16-Bit to 8-Bit SPDT Gigabit LAN Switch With LED Switch and Enhanced ESD Protect 56-WQFN -40 to 85 Visit Texas Instruments Buy
    SF Impression Pixel

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    Sensata Technologies P265-500A-E1C

    4.5÷5.5VDC; OUT: analogue voltage; IP67; -40÷125°C
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    TME P265-500A-E1C 29 1
    • 1 $163.70
    • 10 $133.94
    • 100 $133.94
    • 1000 $133.94
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    Vishay Intertechnologies SQJ500AEP-T1_BE3

    Transistor: N/P-MOSFET; unipolar; 40V; 48W; PowerPAK® SO8
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    TME SQJ500AEP-T1_BE3 3,000
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    Avnet Americas SQJ500AEP-T1_BE3 Tape & Reel 30 Weeks 3,000
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    • 10000 $0.63
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    Mouser Electronics SQJ500AEP-T1_BE3 38,735
    • 1 $2.30
    • 10 $1.12
    • 100 $1.00
    • 1000 $0.75
    • 10000 $0.66
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    Newark () SQJ500AEP-T1_BE3 Cut Tape 3,000
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    SQJ500AEP-T1_BE3 Tape & Reel 3,000
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    EBV Elektronik SQJ500AEP-T1_BE3 24 Weeks 3,000
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    Vishay Intertechnologies SQJ500AEP-T1_GE3

    Transistor: N/P-MOSFET; unipolar; 40V; 48W; PowerPAK® SO8
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    TME SQJ500AEP-T1_GE3 3,000
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    Mouser Electronics SQJ500AEP-T1_GE3 50,538
    • 1 $2.30
    • 10 $1.12
    • 100 $1.00
    • 1000 $0.77
    • 10000 $0.67
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    Newark () SQJ500AEP-T1_GE3 Cut Tape 620 5
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    • 10 $1.12
    • 100 $1.03
    • 1000 $0.98
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    SQJ500AEP-T1_GE3 Tape & Reel 620 100
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    Avnet Asia SQJ500AEP-T1_GE3 32 Weeks 3,000
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    EBV Elektronik SQJ500AEP-T1_GE3 24 Weeks 3,000
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    Vishay Intertechnologies RS01A1R500AE70

    - Tape and Reel (Alt: RS01A1R500AE70)
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    Avnet Americas RS01A1R500AE70 Tape & Reel 15 Weeks 1,000
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    • 1000 $22.76
    • 10000 $21.79
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    Vishay Intertechnologies NH2501R500AE01

    - Bulk (Alt: NH2501R500AE01)
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    Avnet Americas NH2501R500AE01 Bulk 12 Weeks 1
    • 1 $4739.21
    • 10 $3160.67
    • 100 $1028.39
    • 1000 $1016.96
    • 10000 $1016.96
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    500AE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUK446-800B

    Abstract: BUK551-100A BUK583 BUK555 600b BUK5
    Contextual Info: Pow er Devices Power MOSFET Transistors General Purpose in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) Rd s on max (ft) 500 500 500 600 600 600 600 600 600 BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B


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    buk438-500bbuk417-500bebuk417-500aebuk454-600b+11buk444-600bbuk455-600bbuk445-600bbuk457-600bbuk437-600bbuk454-800bbuk446-800bbuk551-100abuk583buk555 600bbuk5 PDF

    BUK417-500AE

    Contextual Info: Product Specification Philips Semiconductors BUK417-500AE/BE PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    buk417-500ae/bebuk417-500ae-500be+2ot227bbuk417-500ae PDF

    BUK617-500AE

    Abstract: SVM91 TRANSISTOR C 557 B W 21
    Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery


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    buk617-500ae/bebuk617-500ae-500be+3buk617-500aesvm91transistor c 557 b w 21 PDF

    BUK617-500AE

    Abstract: TRANSISTOR C 557 B TIC 136 Transistor
    Contextual Info: PHILIPS INTERNATIONAL b5E J> H 7110a5t. OObMETb 37T • P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode


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    7110a5tbuk617-500ae/beot227bbuk617+4-500aebuk617-500aetransistor c 557 btic 136 transistor PDF

    Contextual Info: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery


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    ot227bbuk617-500ae/bebuk6170030fib4+11e-02 PDF

    "1pg" transistor

    Abstract: BUK617-500AE BUK617-500BE BUK617
    Contextual Info: N ANER PHILIPS/DISCRETE t.'lE D • bbSBSBl □ QBOat.D 541 « A P X Philips Sem iconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope.


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    buk617-500ae/beot227bbuk617-500ae+31pg" transistorbuk617-500aebuk617-500be PDF

    EP-08-031DE-120

    Abstract: EP-08-250BG-120 10 35L VISHAY EK 03 125BZ 10C CEA-XX-125UN-350 EP-08-500BL-350 WK-XX-250AF-350 EP-08-125BT-120 CEA-XX-250UW-10C EP-08-125AD-120
    Contextual Info: Linear Patterns Vishay Micro-Measurements General Purpose Strain Gages - Linear Patterns FEATURES • Gage patterns designed for measuring strain in a single direction • Single-grid and parallel dual-grid patterns • Gage lengths from 0.008 in 0.20 mm to 0.500 in (12.7 mm)


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    008clcea-xx-500uw-120cea-xx-500uw-35026-aug-03+10ep-08-031de-120ep-08-250bg-12010 35l vishayek 03 125bz 10ccea-xx-125un-350ep-08-500bl-350wk-xx-250af-350ep-08-125bt-120cea-xx-250uw-10cep-08-125ad-120 PDF

    ts5a6442

    Abstract: TS40A41611 HDMI scaler TS40A41612 8B123 TS40A41641 laptop motherboard schematic military switch HDMI TO VGA MONITOR PINOUT HDMI to vga pinout
    Contextual Info: Analog Switch Guide LAN Network PCI USB Video 3Q 2008 2 Analog Switch Overview ➔ Introduction Today’s competitive environment creates a constant need for higher performance. One common method to optimize system performance involves the use of FET switches also referred to as


    Original
    ts5a6442ts40a41611hdmi scalerts40a41612+68b123ts40a41641laptop motherboard schematicmilitary switchhdmi to vga monitor pinouthdmi to vga pinout PDF

    T161-160

    Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
    Contextual Info: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.


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    iso9001to300sf15cl500aelement+10t161-160scr t161-160t153-630kp25at123-250tc171zp50at143-630 scrkp200at151-100 PDF

    K4175

    Abstract: BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500B BUK417-500BE transistor bc 148 BC 148 transistor bc 147 B transistor
    Contextual Info: PH ILIP S I NTE RN ATI ON AL bSE D H 7 1 1 0 6 2 b 00b3flfib T5^ « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in IS O T O P envelope. The device is intended for use in


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    711dflsbbuk417-500ae/beot227bbuk417+12-500ae-500bebuk417-500aek4175bc 148 transistor pin configurationtransistor bc 147sf 128 transistorbuk417-500bbuk417-500betransistor bc 148bc 148 transistorbc 147 b transistor PDF

    Axial fans

    Contextual Info: 37779-7-8811 • KO-08/07-10,8’ Printed in Germany Axial fans version 07 Axial fans ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen


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    ko-08/07-10d-74673d-78112d-84030+1axial fans PDF

    Axialventilatoren

    Abstract: w1g250hh
    Contextual Info: 37778-7-8811 • KO-07/07-3,25’ Printed in Germany ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen D-78112 St.Georgen D-84030 Landshut


    Original
    ko-07/07-3d-74673d-78112d-84030+2axialventilatorenw1g250hh PDF

    Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3R31 0D3DMSD T7R * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies


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    bbs3r31ot227bbuk417-500ae+3-500bebuk417-500ae/bebuk417-500ae PDF

    BUK417-500AE

    Abstract: BUK417-500B 500ae BUK417-500BE BUK417
    Contextual Info: bTE D N AMER P HI LI PS/ DIS CRE TE • bbSBRBl GD3DMS0 T7R * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor ¡n ISOTOP envelope. The device is intended for use in


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    buk417-500ae/beot227bbuk417-500ae+5-500bebuk417-500aebuk417-500b500aebuk417-500be PDF