500AE Search Results

BUK446-800B

Abstract: BUK551-100A BUK583 BUK555 600b BUK5
Contextual Info: Pow er Devices Power MOSFET Transistors General Purpose in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) Rd s on max (ft) 500 500 500 600 600 600 600 600 600 BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B

BUK417-500AE

Contextual Info: Product Specification Philips Semiconductors BUK417-500AE/BE PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK617-500AE

Abstract: SVM91 TRANSISTOR C 557 B W 21
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery

BUK617-500AE

Abstract: TRANSISTOR C 557 B TIC 136 Transistor
Contextual Info: PHILIPS INTERNATIONAL b5E J> H 7110a5t. OObMETb 37T • P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery

"1pg" transistor

Abstract: BUK617-500AE BUK617-500BE BUK617
Contextual Info: N ANER PHILIPS/DISCRETE t.'lE D • bbSBSBl □ QBOat.D 541 « A P X Philips Sem iconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope.

EP-08-031DE-120

Abstract: EP-08-250BG-120 10 35L VISHAY EK 03 125BZ 10C CEA-XX-125UN-350 EP-08-500BL-350 WK-XX-250AF-350 EP-08-125BT-120 CEA-XX-250UW-10C EP-08-125AD-120
Contextual Info: Linear Patterns Vishay Micro-Measurements General Purpose Strain Gages - Linear Patterns FEATURES • Gage patterns designed for measuring strain in a single direction • Single-grid and parallel dual-grid patterns • Gage lengths from 0.008 in 0.20 mm to 0.500 in (12.7 mm)

ts5a6442

Abstract: TS40A41611 HDMI scaler TS40A41612 8B123 TS40A41641 laptop motherboard schematic military switch HDMI TO VGA MONITOR PINOUT HDMI to vga pinout
Contextual Info: Analog Switch Guide LAN Network PCI USB Video 3Q 2008 2 Analog Switch Overview ➔ Introduction Today’s competitive environment creates a constant need for higher performance. One common method to optimize system performance involves the use of FET switches also referred to as

T161-160

Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Contextual Info: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.

K4175

Abstract: BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500B BUK417-500BE transistor bc 148 BC 148 transistor bc 147 B transistor
Contextual Info: PH ILIP S I NTE RN ATI ON AL bSE D H 7 1 1 0 6 2 b 00b3flfib T5^ « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in IS O T O P envelope. The device is intended for use in

Axial fans

Contextual Info: 37779-7-8811 • KO-08/07-10,8’ Printed in Germany Axial fans version 07 Axial fans ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen

Axialventilatoren

Abstract: w1g250hh
Contextual Info: 37778-7-8811 • KO-07/07-3,25’ Printed in Germany ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen D-78112 St.Georgen D-84030 Landshut

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3R31 0D3DMSD T7R * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies

BUK417-500AE

Abstract: BUK417-500B 500ae BUK417-500BE BUK417
Contextual Info: bTE D N AMER P HI LI PS/ DIS CRE TE • bbSBRBl GD3DMS0 T7R * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor ¡n ISOTOP envelope. The device is intended for use in