G0032 Search Results

EPM7160

Abstract: EPM7160 PLCC CN-TC01 H6062
Contextual Info: ALTERA CORP bfiE D • 05^5375 G003253 013 H A L T EPM7160 EPLD Features ^ □ □ □ □ □ High-density, erasable CMOS EPLD based on second-generation MAX architecture 3,200 usable gates Combinatorial speeds with tPD = 12 ns Counter frequencies up to 90.9 MHz

Contextual Info: b ln n lV t a U D r v l i GH PCRfORMANCE MULQQ INTEGRATEDCIRCUITS EL7134C â C EL7134C High Speed, High Current. Line Driver w/3-State F eatu res G eneral D escrip tion • • • • • • • • • The EL7134C 3-state driver is particularly well suited for ATE

Contextual Info: r& T O K O TK15110 TWO INPUT/SINGLE OUTPUT VIDEO ANALOG SWITCH FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ Low Operating Voltage Low Input Current Wide Dynamic Range Video Frequency Range 55 dB Isolation Television VCR Input Selector Special Effects Generators

EPM7256 PIN

Contextual Info: ALTERA bflE CORP D • DS1S372 GGD3272 T7S « A L T EPM7256 EPLD Features □ □ □ □ □ □ High-density, erasable CMOS EPLD based on second-generation MAX architecture 5,000 usable gates Combinatorial speeds with tPD = 20 ns Higher speed versions under development

PT6005

Abstract: VSC300
Contextual Info: V L S I TECHNOLOGY INC IflE D T3ÔÔ347 üüü32bfl 4 VLSI T ech n o lo gy, inc. VSC300 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL FEATURES • A dvanced 1-m icron draw n gate length , silicon gate C M O S , 2 -la ye r m etal technology • Fast design tu rn-around tim e w ith

nec 2501 optocoupler

Abstract: DIN 32676 Wiring Diagram pt-100 siemens pt100 temperature sensor schematic DEUTSCH connectors abc nec matrix Vacuum tube display nec 14308 Siemens PT100 temperature sensor coriolis D184B111U02
Contextual Info: Operating Instruction D184B111U02 Mass Flowmeter CoriolisMaster FCM2000 Standard software D699G001U01 C.1x D699G001U02 C.1x D699G001U03 C.1x P R O F PROCESS FIELD BUS B U S I Blinder Text Mass Flowmeter CoriolisMaster FCM2000 Operating Instruction D184B111U02

MC1400

Abstract: LT1021C-5 SOI series shunt lt1021-5 lt1021 APPLICATION lt 1021-10 LT 1021 lt1021dcn8-5 LTI021-7 LT1021A-10
Contextual Info: LINEAR TECHNOLOGY CORP r r m EOE D • SSlflMbfl GQ03ST1 S ■ _ m g y -iy TEC H N O LO G Y LT1021 Precision R e fe re n c e F€ATUR€S DCSCRIPTIOfl ■ Pin Compatible w ith M ost Bandgap Reference Applications, Including Ref 0 1 , Ref 0 2 , LM 3 6 8 ,

SO-8 LTLS e3

Abstract: ltls e3 IC LTLS E3
Contextual Info: M O S E L V TTE U C PRELIMINARY V52C8256 MULTIPORT VIDEO RAM WITH 256K X 8 DRAM AND 5 1 2 X 8 SAM HIGH PERFORMANCE V52C8256 Max. RAS Access Tim e, tRAC 60 70 80 60 ns 70 ns 80 ns Max. CA S Access Time, (tcAc) 15 ns 20 ns 25 ns Max. Column Address Access Tim e, ( t ^ )

E43 SHUNT REGULATOR

Abstract: CS-3865CDW16 CS-3865CN16
Contextual Info: CS-3865C H igh Performance D ual Channel Current M ode Controller w ith ENABLE D escription T h e CS-3865C is a h ig h p e rfo r­ m an ce, fix ed freq u e n cy , d u a l c u r­ re n t m o d e co n tro lle r. It is u se d in O ff-L ine a n d D C to D C co n v e rte r

1A-2K

Contextual Info: CAT29F002 S Advance Information Advance Information CAT29F002 2 Megabit CMOS 5V Only Sector Flash Memory FEATURES 100,000 Program/Erase Cycles and 10 Year Data Retention • Fast Read Access Time: 90/120/150 ns ■ Sectored Architecture: - One 16-KB Boot Sector

Contextual Info: •HYUNDAI H Y 5 1 1 6 2 6 0 S e r ie s IM X 16-bit CMOS DRAM with 2CAS &WPB DESCRIPTION The HY5116260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116260 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HYM581000B M-Series • H Y U N D A I 1M x8-btt CMOS DRAM MODULE DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.

PH93

Contextual Info: B E N C H M A R Q _ b q 2 0 5 0 Lithium Ion Power Gauge 1C Features General Description >- Conservative and repeatable measurement of available capacity in Lithium Ion rechargeable batteries The bq2050 L ith iu m Ion Pow er

sc1007

Abstract: dt6167
Contextual Info: INTEGRATED DEVICE 14E D • 4Ö25771 00035tb 4 ■ IDT 6167SA IDT 6167LA CMOS STATIC RAM 16K 16K x 1-BIT TW6-23-05 FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) The IDT6167 Is a 16,384-blt high-speed static RAM organized as 16K x 1. The part Is fabricated using IDT's high-performance, hlghreiiabllity tech nolog y-C E M O S . This state-of-the-art technology,

EPM7256

Abstract: fp 221 25.b EPM7256-25 EPM7256 PIN EPM7256-20 DDD3271 B1395 HA1084 NN37 KE236
Contextual Info: ALTERA bflE D CORP • DS1S372 GGD3272 T7S « A L T EPM7256 EPLD Features □ □ □ □ □ □ High-density, erasable CMOS EPLD based on second-generation MAX architecture 5,000 usable gates Combinatorial speeds with tPD = 20 ns Higher speed versions under development

Contextual Info: r& T O K O TK15210 TWO INPUT/SINGLE OUTPUT AUDIO ANALOG SWITCH APPLICATIONS FEATURES Low Supply Current TTL or CMOS Control Wide Operating Voltage Range Low Distortion .004% TYP High Input Impedance/Low Output Impedance Very Small Surface Mount Package •

Contextual Info: fi- O h a 9 1RS NX SERIES NX Series of I/O Card Interface Connectors • GENERAL — — — ^ ^ ^ _ Connectors o f the NX Series were developed fo r use w ith I/O card interfaces, have a spacing o f 0.8 mm between contacts, and are equipped w ith an inner lock. These connectors can be used w ith type I and type II cards com pliant

12.696

Contextual Info: MF Series Surface Mount Low Profile Horizontal Chip Solvent Proof +85°C Maximum Temperature The MFseries are the standard low profile, surface mount capacitors from United Chemi-Con. These horizontal chip type capacitors are designed for reflow soldering, and the terminals can be seen from

transistor ECG123a

Abstract: ECG123A ECG703A ECG703 PHILIPS colour television schematic radar detector detector FM TRANSMITTER CIRCUIT D tv transmitter amplifier circuit 8T20 coupling capacitive voltage transformer 2000PF
Contextual Info: bbS312fl 0003245 7 • — ECG703A RF/IF AMPLIFIER OSCILLATOR AND MIXER - T V T ? - 0 PHILIPS E C G INC ' 3 'D 7 — 17E D DESC RIPTION The E C G 7 0 3 A in te g ra te d c ir c u it is an R F / IF a m p lifie r in te n d e d for use as a lim itin g or

BP107

Abstract: CDD10410 CDD10810 f3205 pow-r-blok
Contextual Info: POWEREX INC m U B t 1SE D E • TSmbEl GD03S73 5 ■ CDD 10410 CDD10810 X Powerex, Inc., Wills Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Dual Diode POW-R-BLOK Modules

gs e501

Contextual Info: EL2082C f lla w in f HIGH PERFORMANCE ANAbOG INTEGRATED CIRCUITS EL2082C CllTTBtlt-ModC M ultip lld V F eatu res G eneral D escrip tion • Flexible inputs and outputs, all ground referred • 150 M Hz large and small-signal bandwidth • 46 dB of calibrated gain control

EPM7128

Abstract: EPM7128 EPLD EPM7128-15 altera max epm7128 EPM7128-10 EPM7128 PLCC epm71284 D4038 EPM7128-12
Contextual Info: A L TE RA CORP bôE D • OSASTE 0003244 GÜD « A L T EPM7128 E P LD Features ^ □ □ □ □ □ H igh -d en sity CM O S EP LD b a se d on secon d -gen eration M AX architecture 2,500 usable gates Com binatorial speeds with tPD = 10 ns Counter frequencies up to 100 MHz

receiver philips fr 310

Contextual Info: fc.bSS'lSfl Q0032kl s • ECG706 WIDE-BAND AMPLIFIER, FM DETECTOR AF PREAMPLIFIER/ DRIVER semiconductors PHILIPS E C G INC 1 7 E ^ 7 7 - 0 7 - 0 5 4 5 m hi IN P U T Cl T il V O L U M E ‘ C IR C U IT BYPASS T GND ( T FEATURES (knee • large audio drive voltage capability