IDT6167 Search Results

Contextual Info: CMOS STATIC RAM 16K 16Kx 1-BIT IDT6167SA IDT6167LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed (equal access and cycle time) — Military: 1 5 /2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 /1 00ns (max.) — Com mercial: 12 /15/2 0 /2 5 /3 5 n s (m ax.)

125OC

Abstract: IDT6167 IDT6167LA IDT6167SA
Contextual Info: IDT6167SA IDT6167LA CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS

bbu07

Contextual Info: IDT6167SA IDT6167LA CMOS STATIC RAM 16K 16K x 1-BIT Integrated Device Technology, Inc. FEATURES: Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CSgoes HIGH, the circuit will automatically go to, and remain in, a standby

Contextual Info: Data Sheet March 1992 l ^ AT&T Microelectronics ATT7C167 High-Speed CMOS SRAM 16 Kbits 16K x 1 , Separate I/O Features • High speed — 10 ns maximum access time ■ Plug-compatible with IDT6167 and CY7C167 ■ Automatic powerdown during long cycles ■ Low-power operation

IDT6167

Abstract: IDT6167LA IDT6167SA
Contextual Info: CMOS Static RAM 16K 16K x 1-Bit IDT6167SA IDT6167LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit

Contextual Info: INTEGRATE] DEVICE SÔE V CMOS STATIC RAM 16K 16K x 1-BIT) 4ÖBS771 001154Q TSb IDT6167SA IDT6167LA Integrated Device Technology» Inc. FEATURES: Access times as fast as 12ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH,

Contextual Info: CMOS STATIC RAM 16K 16K x 1-BIT IDT6167SA IDT6167LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

Contextual Info: CMOS STATIC RAM 16K 16Kx 1-BIT IDT6167SA IDT6167LA Integrated Device Technology, Inc. FEATURES: A cc e ss tim e s as fa st as 12ns are available. T h e circuit also offers a reduced po w e r stan dby m ode. W hen C 5 g o e s HIGH, the circuit w ill au tom atically go to, and rem ain in, a standby

Contextual Info: CMOS STATIC RAM PLASTIC SIP MODULE 16K x 5-BIT Integrated D eviceTechnology Inc IDT7MP564 FEATURES: DESCRIPTION: • • • • • The IDT7MP564 is an 80K (16,384 x 5-bit) high-speed CMOS static RAM constructed on an epoxy laminate substrate using 5 IDT6167 (16,384 x 1-bit) CMOS static RAMs in plastic surface

SO20-1

Contextual Info: IDT6167SA IDT6167LA CMOS STATIC RAM 16K 16Kx 1-BIT Integrated D evice T ech n o logy, Inc. Access tim es as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby

cerdip 300mil

Abstract: 300mil SO20 Package IDT6167 IDT6167LA IDT6167SA LA6570
Contextual Info: IDT6167SA IDT6167LA CMOS STATIC RAM 16K 16K x 1-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

Contextual Info: CMOS STATIC RAM 16K 16Kx 1-BIT IDT6167SA IDT6167LA In te g ra te d D evice T echnology, Inc. FEATURES: • H igh-spee d (equal a c c e s s and cycle tim e) — M ilitary: 1 5 /2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 /1 00 ns (m ax.) — C o m m e rc ia l: 15 /2 0 /2 5 /3 5 n s (m ax.)

Contextual Info: CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT6167SA IDT6167LA OBSOLETE PART high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit

s-1311

Abstract: D15C
Contextual Info: 256K CMOS STATIC RAM MODULE ID T 7M 656L FEATURES: DESCRIPTION: • • • The IDT7M656 is a 256K-bit high-speed CMOS static RAM con­ structed on a multilayered ceramic substrate using 16 IDT6167 16Kx1 static RAMs inleadiesschipcarriers. Making 4 chip select

2981 24 pin

Abstract: ldt6167
Contextual Info: IDT6167SA IDT6167LA CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit

t616

Contextual Info: 3ÖE D IN T E G R A T E D DEVI CE • 4ÔES771 OOGölbl M CMOS STATIC RAM 16K 16K x 1-BIT 4 ■ IDT ^ - 2 2 - ô S - IDT6167SA IDT6167LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 1 5 /2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 /1 00ns (m ax.)

sc1007

Abstract: dt6167
Contextual Info: INTEGRATED DEVICE 14E D • 4Ö25771 00035tb 4 ■ IDT 6167SA IDT 6167LA CMOS STATIC RAM 16K 16K x 1-BIT TW6-23-05 FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) The IDT6167 Is a 16,384-blt high-speed static RAM organized as 16K x 1. The part Is fabricated using IDT's high-performance, hlghreiiabllity tech nolog y-C E M O S . This state-of-the-art technology,

LA5512

Abstract: nd 2981
Contextual Info: CMOS STATIC RAM 16K 16K x 1-BIT IDT6167SA IDT6167LA Integrated Device Technology, Inc. FEATURES: Access times as fast as 12ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby

N1121A

Abstract: IDT7M656
Contextual Info: The IDT7M656 is a 256K-bit high-speed CMOS static RAM con­ structed on a multilayered ceramic substrate using 16 IDT6167 16Kx1 static RAMs in leadless chip carriers. Making 4 chip select lines available (one for each group of 4 RAMs) allows the user to

Contextual Info: IDT6167SA IDT6167LA CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit

Contextual Info: IDT6167SA IDT6167LA CMOS STATIC RAM 16K 16K x 1-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

HA1318

Contextual Info: CMOS STATIC RAM 16K 16K x 1-BIT IDT6167SA IDT6167LA Integrated Device Technology, inc. FEATURES: A cce ss tim e s a s fa s t a s 15 n s a re a va ila b le . T h e c irc u it also offers a reduced p o w e r s ta n d b y m ode. W h e n C S g o e s H IG H ,

cerdip 300mil

Abstract: 300mil SO20 Package 16K RAM IDT6167 IDT6167LA IDT6167SA a0191
Contextual Info: IDT6167SA IDT6167LA CMOS STATIC RAM 16K 16K x 1-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

Contextual Info: 256K CMOS STATIC RAM MODULE lnT7iJCCC, i d t ?M656L FEATURES: DESCRIPTION: • High-density 256K-blt CMOS static RAM module The IDT7M656 is a 256K-bit high-speed CMOS static RAM con­ structed on a multilayered ceram ic substrate using 16 IDT6167 16Kx1 static RAMs in leadless chip carriers. Making 4 chip select