G 7N60 Search Results

7N60P

Contextual Info: PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 ID25 = 7 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V VGS

7N60P

Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 = 7 ID25 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 600 600

7N60m

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60-M Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7N60G-TF3-T

Abstract: 7N60 7n60f 7n60l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi IXGA 7N60C IXGP 7N60C Maximum Ratings 600 = 1 MΩ V Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series VCES IC25 VCE sat typ tfi = 600 V = 14 A = 2.0 V = 45 ns Preliminary Data Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES Maximum Ratings 600 600 V

7N60G-TF3-T

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7n60f

Abstract: 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

7n60f

Abstract: UTC7N60 7N60R 7N60G-TF3-T 7n60l 7N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7N60C

Abstract: TO-220 footprint
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series VCES IC25 VCE sat tfi IXGA 7N60C IXGP 7N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

7N60B

Abstract: 7N60B equivalent how to test 7N60B 7N60B pdf download free 7N60 7N60B UPS equivalents transistor 7n60b
Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi IXGA 7N60B IXGP 7N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C

Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi IXGA 7N60B IXGP 7N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C

7N60C

Contextual Info: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series VCES IC25 VCE sat typ tfi = 600 V = 14 A = 2.0 V = 45 ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

7n60b

Abstract: DS98977
Contextual Info: Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V VCES IC25 VCE sat tfi = 600 V

7N60C

Abstract: TO-220AB footprint
Contextual Info: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C

Contextual Info: Advanced Technical Information IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

DIODE 349

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

DIODE 349

Abstract: 7n60z
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche