7N60L Search Results
7N60L Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 7N60L | Unisonic Technologies | 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET | Original | 182.88KB | 7 | ||
| 7N60L-TA3-T | Unisonic Technologies | 7.4 Amps, 600 Volts N-CHANNEL MOSFET | Original | 144.96KB | 7 |
7N60L Price and Stock
Helical Wire Inc M4X.7N6.0L |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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M4X.7N6.0L | 5 |
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United Technologies Corporation UTC7N60L |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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UTC7N60L | 2,949 |
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Buy Now | |||||||
7N60L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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UTC7N60L
Abstract: 7N60L 7N60LL 7N60L-A 20v 3a ultra fast recovery diode
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7n60l7n60llqw-r502-189utc7n60l+2 | |
UTC7N60L
Abstract: 7N60L 7N60LL power mosfet 600v 7N60L-A
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7n60l7n60ll7n60lgqw-r502-189+3 | |
7n60bContextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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7n60lqw-r502-0767n60b | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60-Q Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
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7n60-q7n60l-ta3-t7n60g-ta3-t7n60l-tf3-t+2 | |
7N60B
Abstract: 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60
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7n60l7n60gqw-r502-0767n60b+8 | |
7n60fContextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60-F Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
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7n60-f7n60l-ta3-t7n60g-ta3-t7n60l-tf3-t+3 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
Original |
7n60l-ta3-t7n60g-ta3-t7n60l-tf3-t7n60g-tf3-t+2 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
Original |
o-220o-220f7n60lqw-r502-076 | |
7N60G-TF3-T
Abstract: 7N60 7n60f 7n60l
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7n60-f/7n60-m/7n60-r/7n60-qqw-r502-0767n60g-tf3-t+3 | |
7N60G-x-TF1Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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o-220o-220f7n60-f/7n60-l/7n60-m/7n60-qqw-r502-076+1 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
Original |
7n60l-ta3-t7n60g-ta3-t7n60l-tf3-t7n60g-tf3-t+2 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
Original |
7n60l-ta3-t7n60g-ta3-t7n60l-tf3-t7n60g-tft+1 | |
7N60mContextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60-M Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
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7n60-m7n60l-ta3-t7n60g-ta3-t7n60l-tf3-t+3 | |
7n60b
Abstract: tr 7n60b 74ATC MOSFET 7N60B D7N60 7N60B free 7N60 600v 4A mosfet
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7n60l7n60gqw-r502-0767n60b+7 | |
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7n60f
Abstract: 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET
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o-220o-220f7n60/7n60-r7n60-f/7n60-m/7n60-q+11 | |
7N60G-TF3-TContextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
Original |
7n60-f/7n60-m/7n60-r/7n60-qqw-r502-0767n60g-tf3-t | |
7n60f
Abstract: UTC7N60 7N60R 7N60G-TF3-T 7n60l 7N60
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o-220o-220f7n60/7n60-r7n60-f/7n60-m/7n60-q+7 | |
7N60
Abstract: OF 7N60 7n60 mosfet 7N60L 7N60L-TA3-T 7N60-TA3-T 7N60-TF3-T
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o-220o-220f7n60lqw-r502-076+6 | |
ge tube companyContextual Info: 7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Features Description • Low saturation voltage : VCE sat = 1.4 V @ IC = 7A Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage |
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fgpf7n60lsdo-220ffgpf7n60lsdtuge tube company | |
7N60
Abstract: 7n60 mosfet 7n60f 7N60B 7N60L TO-262 MOSFET OF 7N60 DATASHEET OF 7N60 7N60L-x-T2Q-T mosfet 4b
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o-220o-220f7n60/7n60-r7n60-f/7n60-m/7n60-q+11 | |
7N60B
Abstract: TO-262 MOSFET 7N60 7N60B free mosfet 4b mosfet TEST G7N60 G 7N60
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o-220o-220fo-220f1o-262+9 | |