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    FQPF SERIES Search Results

    FQPF SERIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    11C90DM
    Rochester Electronics LLC 11C90 - Prescaler, ECL Series PDF Buy
    MD8212/B
    Rochester Electronics LLC 8212 - Registered Bus Transceiver, 82 Series, 8-Bit, True Output PDF Buy
    54AC14/QCA
    Rochester Electronics LLC 54AC14 - Inverter, AC Series, 6-Func, 1-Input, CMOS - Dual marked (5962-8762401CA) PDF Buy
    54ACTQ32/QCA
    Rochester Electronics LLC 54ACTQ32 - OR Gate, ACT Series, 4-Func, 2-Input, CMOS, - Dual marked (5962-8973601CA) PDF Buy
    5962-8672601EA
    Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy

    FQPF SERIES Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQPF Series
    Fairchild Semiconductor Discrete Products Original PDF 60.67KB 3

    FQPF SERIES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: KSMF17P06 60V P-Channel MOSFET TO-220F FQPF Series Features • -12A, -60V, R DS on = 0.12 Ω @VGS = -10 V • Low gate charge ( typical 21 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175 °C maximum junction temperature rating


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    KSMF17P06 O-220F PDF

    8n80c

    Abstract: 8n80 FQP8N80C FQPF
    Contextual Info: TM FQP8N80C/FQPF8N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP8N80C/FQPF8N80C O-220 FQPF8N80C FQPF8N80CXDTU FQPF8N80CYDTU 8n80c 8n80 FQP8N80C FQPF PDF

    Contextual Info: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    FQP11N40C/FQPF11N40C O-220 O-220F FQP11N40C/FQPF11N40C PDF

    8N60C

    Abstract: 8N60CT FQPF8N60CT FAN7602 FQPF8N60CYDTU FQPF8N60C AN-6014 FQPF Series
    Contextual Info: FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP8N60C/FQPF8N60C FQPF8N60C AN-6014: AN-6014 FAN7602 FQPF8N60CT FQPF8N60CYDTU 8N60C 8N60CT FAN7602 FQPF Series PDF

    Contextual Info: FRFET TM FQPF8N60CF 600V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQPF8N60CF FQPF8N60CF PDF

    Contextual Info: QFET FQPF12N60CT 600V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQPF12N60CT FQPF12N60CT PDF

    Contextual Info: TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description • 9A, 500V, RDS on = 0.85Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 28 nC)


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    FQPF9N50CF FQPF9N50CF PDF

    Contextual Info: FRFET TM FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description • 9A, 600V, RDS on = 0.8Ω @VGS = 10 V • Low gate charge ( typical 44 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


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    FQP10N60CF FQPF10N60CF FQPF10N60CF PDF

    FQPF Series

    Abstract: FQP10N60C
    Contextual Info: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


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    FQP10N60C FQPF10N60C FQPF10N60C FQPF Series PDF

    Contextual Info: FRFET TM FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description • 13A, 500V, RDS on = 0.54Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    FQP13N50CF FQPF13N50CF FQPF13N50CF PDF

    pfv218n50

    Abstract: PV218N50 18N50V2 PV2-18N50 FQPF18N50V2 pfv218 FQPF18N50 FQP18N50V2 18N50 pfv2
    Contextual Info: FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description • 550V @TJ = 150°C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Typ. RDS on = 0.265Ω @VGS = 10 V


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    FQP18N50V2/FQPF18N50V2 FQP18N50V2/FQPF18N50V2 factTO-220F FQPF18N50V2 O-220F-3 FQPF18N50V2SDTU pfv218n50 PV218N50 18N50V2 PV2-18N50 pfv218 FQPF18N50 FQP18N50V2 18N50 pfv2 PDF

    Contextual Info: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


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    FQP10N50CF FQPF10N50CF FQPF10N50CF PDF

    Contextual Info: QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP12N60C FQPF12N60C FQPF12N60C PDF

    9N25C

    Abstract: FQPF9N25CT
    Contextual Info: FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP9N25C/FQPF9N25C FQPF9N25C FQPF9N25CT 9N25C PDF

    EE ferrite

    Contextual Info: IN-PLUG IPS1 5 Datasheet – Rev.12 - Low cost, High Efficiency, Low Power off-line Switcher IN-PLUG® series: IPS1 5 Low Cost, High Efficiency, Low Power Enhanced Off-line Switcher – REVISION 12 INTRODUCTION DESCRIPTION The IN-PLUG® IPS15 is an enhanced off-line


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    IPS15 IPS10. IPS10, 1290-B EE ferrite PDF

    ASIC R2

    Contextual Info: IN-PLUG IPS15 Datasheet – Rev.12 - Low cost, High Efficiency, Low Power off-line Switcher IN-PLUG® series: IPS15 Low Cost, High Efficiency, Low Power Enhanced Off-line Switcher – REVISION 12 INTRODUCTION DESCRIPTION The IN-PLUG® IPS15 is an enhanced off-line


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    IPS15 IPS15 IPS10. IPS10, 1290-B ASIC R2 PDF

    IPS15HI

    Abstract: IPS15H 90-265V
    Contextual Info: IN-PLUG IPS15H Datasheet – Rev.10 – Hiccup flyback Cont® roller – Easy Opto Failsafe Protection IN-PLUG series: IPS15H Enhanced Off-line Switcher With Hiccup, Low Cost, High Efficiency, Low Stand-By Power. Fail-Safe Protection from Optocoupler Failure


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    IPS15H IPS15H IPS15 1290-B IPS15HI 90-265V PDF

    Contextual Info: IN-PLUG IPS18 Rev.10 Datasheet –Ultra Green Hiccup Flyback ® Controller -Easy Opto Failsafe Protect. IN-PLUG series: IPS18 Off-line Switcher With Hiccup & Cycle skipping, Ultra Green, Low Cost, High Efficiency. Fail-Safe Protection from Feedback Loop Failure


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    IPS18 IPS18 IPS15H IPS15 1290-B PDF

    FQPF Series

    Abstract: FQPF7N20L
    Contextual Info: QFET TM FQPF7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQPF7N20L FQPF Series FQPF7N20L PDF

    br 4n60

    Contextual Info: IN-PLUG IPS401 Datasheet - Rev.11 - Universal WHITE LED Controller with 0.5V current FB voltage IN-PLUG® series: IPS4 0 1 High Ef f iciency, High Power Fact or , Univer sal High Br ight ness WHITE LED Cont r oller – REVISION 11 – INTRODUCTION DESCRIPTION


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    IPS401 1290-B br 4n60 PDF

    FQPF9N50CF

    Abstract: FQPF*9n50cf FQPF9N50C
    Contextual Info: TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description • 9A, 500V, RDS on = 0.85Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 28 nC)


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    FQPF9N50CF FQPF9N50CF FQPF*9n50cf FQPF9N50C PDF

    Contextual Info: QFET TM FQPF65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQPF65N06 PDF

    Contextual Info: TM FQPF2N70 700V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQPF2N70 O-220F PDF

    FQPF6N45

    Contextual Info: QFET TM FQPF6N45 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQPF6N45 FQPF6N45 PDF