FQPF SERIES Search Results

Contextual Info: KSMF17P06 60V P-Channel MOSFET TO-220F FQPF Series Features • -12A, -60V, R DS on = 0.12 Ω @VGS = -10 V • Low gate charge ( typical 21 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175 °C maximum junction temperature rating

FQPF8N60CF

Contextual Info: FQPF8N60CF N-Channel QFET FRFET® MOSFET 600 V, 6.26 A, 1.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

8n80c

Abstract: 8n80 FQP8N80C FQPF
Contextual Info: TM FQP8N80C/FQPF8N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

10N60CT

Abstract: 10N60C FQPF10N60CT FQPF Series fqpf10n60c FQPF10N60C FQPF Series FQPF 10N60 FQP10N60C
Contextual Info: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

8N60C

Abstract: 8N60CT FQPF8N60CT FAN7602 FQPF8N60CYDTU FQPF8N60C AN-6014 FQPF Series
Contextual Info: FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

9N50C

Abstract: 9N50C mOSFET FQPF9N50C FQPF9N50CT high power diode 500v 220F3
Contextual Info: TM FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FRFET TM FQPF8N60CF 600V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET FQPF12N60CT 600V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description • 9A, 500V, RDS on = 0.85Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 28 nC)

Contextual Info: FRFET TM FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description • 9A, 600V, RDS on = 0.8Ω @VGS = 10 V • Low gate charge ( typical 44 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FQPF Series

Abstract: FQP10N60C
Contextual Info: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

2n60 fqpf

Abstract: 2N60 MOSFET SMPS STD2NB60 3n60 MOSFEt STD3NB60 Self-Oscillating Flyback Converters 3N60
Contextual Info: Power Management IPS102 IN-PLUG series: IPS102 Critical Mode PFC Controller Low Cost, High Efficiency PRELIMINARY REV. 5 INTRODUCTION FEATURES DESCRIPTION  The IN-PLUG IPS102 is a primary-side switching controller which provides simple yet high performance active power factor correction PFC .

3N60

Contextual Info: Power Management IPS102 IN-PLUG series: IPS102 Critical Mode PFC Controller Low Cost, High Efficiency PRELIMINARY REV. 5 INTRODUCTION FEATURES DESCRIPTION  The IN-PLUG IPS102 is a primary-side switching controller which provides simple yet high performance active power factor correction PFC .

Contextual Info: FRFET TM FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description • 13A, 500V, RDS on = 0.54Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

pfv218n50

Abstract: PV218N50 18N50V2 PV2-18N50 FQPF18N50V2 pfv218 FQPF18N50 FQP18N50V2 18N50 pfv2
Contextual Info: FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description • 550V @TJ = 150°C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Typ. RDS on = 0.265Ω @VGS = 10 V

Contextual Info: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IN-PLUG IPS1 0 1 Datasheet – Rev.10 - High Efficiency Power Factor Correction Cont r oller IN-PLUG® series: IPS1 0 1 Low Cost, High Efficiency Power Factor Correction Controller – REVISION 10 - INTRODUCTION FEATURES DESCRIPTION ® The IN-PLUG IPS101 is a special line-side

3N80C

Abstract: FQPF*3N80C DATE CODE FAIRCHILD
Contextual Info: TM FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

9N25C

Abstract: FQPF9N25CT
Contextual Info: FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

6n40c

Contextual Info: TM FQP6N40C/FQPF6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

5n50c

Abstract: FQPF*5n50c 5n50
Contextual Info: TM FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

EE ferrite

Contextual Info: IN-PLUG IPS1 5 Datasheet – Rev.12 - Low cost, High Efficiency, Low Power off-line Switcher IN-PLUG® series: IPS1 5 Low Cost, High Efficiency, Low Power Enhanced Off-line Switcher – REVISION 12 INTRODUCTION DESCRIPTION The IN-PLUG® IPS15 is an enhanced off-line