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    FQPF9N25CT Search Results

    FQPF9N25CT Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQPF9N25CT
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8.8A TO-220F Original PDF 8
    FQPF9N25CT
    		Fairchild Semiconductor 250V N-Channel Advance Q-FET C-Series; Package: TO-220F; No of Pins: 3; Container: Rail Original PDF 1.15MB 10
    FQPF9N25CT_NL
    		Fairchild Semiconductor 250V N-Channel Advance Q-FET C-Series Original PDF 1.15MB 10
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    FQPF9N25CT Price and Stock

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    onsemi FQPF9N25CT

    MOSFET N-CH 250V 8.8A TO220F
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    DigiKey FQPF9N25CT Tube 1,000
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    onsemi FQPF9N25CT (QFET SERIES)

    Mosfet S - Single; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:8.8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:38W Rohs Compliant: Yes |Onsemi FQPF9N25CT
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    Newark FQPF9N25CT (QFET SERIES) Bulk 1,000
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    Fairchild Semiconductor Corporation FQPF9N25CT

    Power Field-Effect Transistor, 8.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    Rochester Electronics FQPF9N25CT 43 1
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    FQPF9N25CT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FQPF9N25C / FQPF9N25CT N-Channel QFET MOSFET 250 V, 8.8 A, 430 mΩ Features Description • 8.8 A, 250 V, RDS on = 430 mΩ (Max.) @ VGS = 10 V, ID = 4.4 A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FQPF9N25C FQPF9N25CT PDF

    9N25C

    Abstract: FQPF9N25CT
    Contextual Info: FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQP9N25C/FQPF9N25C FQPF9N25C FQPF9N25CT 9N25C PDF