8N60C Search Results
8N60C Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
SLF8N60C
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Maplesemi | 600V N-Channel MOSFET with 7.5A continuous drain current, 1.0 ohm typical RDS(on) at VGS = 10V, low gate charge of 29nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. | Original |
8N60C Price and Stock
onsemi FQI8N60CTUPower MOSFET, N-Channel, QFET?, 600 V, 7.5 A, 1.2 ?, I2PAK - Rail/Tube (Alt: FQI8N60CTU) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQI8N60CTU | Tube | 1,000 |
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FQI8N60CTU | 6,985 | 1 |
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FQI8N60CTU | 12,000 |
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onsemi FQP8N60CPower MOSFET, N-Channel, QFET?, 600 V, 7.5 A, 1.2 ?, TO-220 - Rail/Tube (Alt: FQP8N60C) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQP8N60C | Tube | 1,000 |
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FQP8N60C | 4,887 | 1 |
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FQP8N60C | 918 |
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onsemi FQPF8N60C- Rail/Tube (Alt: FQPF8N60C) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQPF8N60C | Tube | 2,000 |
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FQPF8N60C | 14,408 | 1 |
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FQPF8N60C | 460 |
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Infineon Technologies AG SIPC08N60C3X1SA1- Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIPC08N60C3X1SA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIPC08N60C3X1SA1 | Waffle Pack | 498 |
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Infineon Technologies AG SIPC18N60CFDX1SA1- Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIPC18N60CFDX1SA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIPC18N60CFDX1SA1 | Waffle Pack | 207 |
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8N60C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
8N60C
Abstract: 8N60CT FQPF8N60CT FAN7602 FQPF8N60CYDTU FQPF8N60C AN-6014 FQPF Series
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Original |
FQP8N60C/FQPF8N60C FQPF8N60C AN-6014: AN-6014 FAN7602 FQPF8N60CT FQPF8N60CYDTU 8N60C 8N60CT FAN7602 FQPF Series | |
8n60cContextual Info: TM 8N60C / 8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQB8N60C FQI8N60C FQI8N60C O-262 FQI8N60CTU 8n60c | |
8n60c
Abstract: SVDF8N60c
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Original |
FQB8N60C FQI8N60C O-263 FQB8N60CTM 8n60c SVDF8N60c |