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    FQI8N60CTU Search Results

    FQI8N60CTU Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQI8N60CTU
    		Fairchild Semiconductor 600V N-Channel Advance Q-FET C-Series Original PDF 656.94KB 9
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    FQI8N60CTU Price and Stock

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    FLIP ELECTRONICS FQI8N60CTU

    MOSFET N-CH 600V 7.5A I2PAK
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    DigiKey FQI8N60CTU Tube 1,000
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    onsemi FQI8N60CTU

    MOSFET N-CH 600V 7.5A I2PAK
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    Avnet Americas FQI8N60CTU Tube 807
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    Verical () FQI8N60CTU 23,000 216
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    FQI8N60CTU 5,985 216
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    FQI8N60CTU 1,000 216
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    FQI8N60CTU 312 216
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    Rochester Electronics FQI8N60CTU 6,985 1
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    Flip Electronics FQI8N60CTU 12,000
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    Rochester Electronics LLC FQI8N60CTU

    POWER FIELD-EFFECT TRANSISTOR, 7
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    DigiKey () FQI8N60CTU Bulk 173
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    Fairchild Semiconductor Corporation FQI8N60CTU

    Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics FQI8N60CTU 25,774 1
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    FQI8N60CTU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FQB8N60C / FQI8N60C N-Channel QFET MOSFET 600 V, 7.5 A, 1.2 Ω Description Features • 7.5 A, 600 V, RDS on = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


    Original     		FQB8N60C FQI8N60C PDF

    8n60c

    Contextual Info: TM FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB8N60C FQI8N60C FQI8N60C O-262 FQI8N60CTU 8n60c PDF