pfv218n50
Abstract: PV218N50 pfv2 FQPF18N50V2 FQP18N50V2 BIR-H0033A FQPF18N50 PV2-18N50
Contextual Info: FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description • 550V @TJ = 150°C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Typ. RDS on = 0.265Ω @VGS = 10 V
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fqp18n50v2/fqpf18n50v2pfv218n50pv218n50pfv2+5fqpf18n50v2fqp18n50v2bir-h0033afqpf18n50pv2-18n50
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pfv218n50
Abstract: PV218N50 18N50V2 PV2-18N50 FQPF18N50V2 pfv218 FQPF18N50 FQP18N50V2 18N50 pfv2
Contextual Info: FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description • 550V @TJ = 150°C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Typ. RDS on = 0.265Ω @VGS = 10 V
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fqp18n50v2/fqpf18n50v2factto-220ffqpf18n50v2o-220f-3+10fqpf18n50v2sdtupfv218n50pv218n5018n50v2pv2-18n50pfv218fqpf18n50fqp18n50v218n50pfv2
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pfv218n50
Abstract: PV218N50 PV2-18N50 isd 2530
Contextual Info: FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description • 550V @TJ = 150°C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Typ. RDS on = 0.265Ω @VGS = 10 V
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fqp18n50v2/fqpf18n50v2pfv218n50pv218n50pv2-18n50+1isd 2530
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