FMXG Search Results

AG01A

Abstract: EG01A FMC-26U FMD-G26S FMG-G26S FMG-G36S FML-G16S FML-G26S FMN-G16S FMX-G16S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Tj (°C) 600 Frame-2Pin Center-tap 30 IR (H) (mA) t rr VF (V) max Ta IF V = V V = V R RM R RM (°C) (A) max max Half-cycle Sinewave Single Shot Axial IR (µA) Tstg (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point

FMX-G12S

Abstract: FMP-G12S FMPG12S
Contextual Info: ULTRA-FAST-RECOVERY RECTIFIER DIODES Type No. V rm lo If s m V (A) (A) VF Ir Max. @ lF trr (mA) (ns) Type No. V rm lo If s m (V) (A) (A) 1.5 (A) 25 1.0 10nA 50 RG 2Y 70 SFPL-52 200 0.9 SFPL-62 200 1.0 RG 2Z 200 AL01Z 200 1.0 25 0.98 1.0 0.1 50 RG 2 400 1.2

FMX-G14S

Contextual Info: SANKEN ELECTRIC CO., LTD. FMX-G14S 1. Scope The present specifications shall apply to Sanken silicon diode, FMX-G14S. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification，etc. Flammability: UL94V-0 Equivalent 3. Absolute maximum ratings

fml-g16s

Abstract: RG-2A Diode AG01A EG01A FMC-26U FMD-G26S FMG-G26S FMG-G36S FMN-G16S FMX-G16S
Contextual Info: VRM V Package Part Number Surface Mount MP3-306 Axial 600 Frame-2Pin IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 2 : I F / I R (=I F) 90% Recovery Point

AG01

Abstract: AL01 EG01 FMG-14S FMG-24S FML-14S FML-24S FML-G14S FMN-G14S FMX-G14S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V Ta R RM R RM (A) (°C) max max 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8

FMX-32S

Abstract: AG01 AL01 EG01 FMG-14S FMG-24S FML-14S FML-24S FML-G14S FMN-G14S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V Ta R RM R RM (A) (°C) max max 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

GM-3A

Abstract: GU-1F GH-1E FML-G14S FML-G16S FML-G22S FMP-G12S FMX-G12S GFB30B GFB30C
Contextual Info: - 66 AË B £ FML-G13S FML-G14S FML-G 1 6 S FML-G22S FMP-G 1 2 S FMP-G 3 F S FMP-G15FS FMX-G12S GFB30B GF B 3 0 C * * * GFB30E * GF B 3 0 G * GF D I O B * GF D I O C * GFDIOE a « y >r y ^ y*r y y >r y y *T y -tf- y *r y < fy> r y Vr s m V k r :m Vr IFM V

FMPG3F

Abstract: FMP-G3FS GH-1E FML-G14S FML-G16S FML-G22S FMP-G12S FMX-G12S GFB30B GFB30C
Contextual Info: - 66 AË B £ FML-G13S FML-G14S FML-G 1 6 S FML-G22S FMP-G 1 2 S * * * * * * * FMP-G 3 F S FMP-G15FS FMX-G12S GFB30B GF B 3 0 C GFB30E GF B 3 0 G GF D I O B GF D I O C GFDIOE a « y >r y ^ y*r y y >r y y *T y -tf- y *r y < fy> r y Vr s m V k r :m Vr IFM V

gu 81

Abstract: GM-3A GFB30B GFB30C GH-1E FML-G14S FML-G16S FML-G22S FMP-G12S FMX-G12S
Contextual Info: - 66 AË B £ FML-G13S FML-G14S FML-G 1 6 S FML-G22S FMP-G 1 2 S * * FMP-G 3 F S FMP-G15FS FMX-G12S GFB30B GF B 3 0 C GFB30E GF B 3 0 G GF D I O B * GF D I O C * GFDIOE a « y ^ y*r y y >r y y *T y -tf- y *r y < fy> r y = .& * * =m * * * * GFDIOG G H -IE G H -1F

AG01A

Abstract: fml-g16s EG01A FMC-26U FMD-G26S FMG-G26S FMG-G36S FMN-G16S FMX-G16S FMX-G26S
Contextual Info: VRM V Package Part Number Surface Mount MP3-306 Axial 600 Frame-2Pin IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 2 : I F / I R (=I F) 90% Recovery Point

fml-g16s

Abstract: AG01A EG01A FMC-26U FMD-G26S FMG-G26S FMG-G36S FMN-G16S FMX-G16S FMX-G26S
Contextual Info: VRM V Package Part Number Surface Mount MP3-306 Axial 600 Frame-2Pin IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 2 : I F / I R (=I F) 90% Recovery Point

SJPL

Contextual Info: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks 0.9 1.0 1.0 2.0 1.5 1.5 Package Surface-Mount (SFP) Surface-Mount (SFP) Surface-Mount (SJP) Surface-Mount (SFP) Surface-Mount (SJP)

AG01Z

Abstract: AL01Z EG01Z EN01Z MP2-202S MPL-102S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

AG01

Abstract: AL01 EG01 FMG-14S FMG-24S FML-14S FML-24S FML-G14S FMN-G14S FMX-G14S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V Ta R RM R RM (A) (°C) max max 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8

FMXG26

Abstract: sanken power transistor FGM623S FMX-G26S fmxg sanken
Contextual Info: SANKEN ELECTRIC FGM623S Features ・Low Saturation Voltage VCE sat =1.5V typ. (IC=30A) ・High Speed SW tf=120ns typ. (IC=30A) http://www.sanken-ele.co.jp Jul. 2010 Package TO-3PF Applications ・Current Resonance Inverter Switching Equivalent circuit C(2)

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

FMX-G22S

Abstract: FMX-G22
Contextual Info: FMX-G22S Super Fast Rectifiers VOLTAGE RANGE: 200 V CURRENT: 10 A ITO-220AC Features Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses The plastic m aterial carries U/L recognition 94V-0 Mechanical Data

FMXA-1106S

Abstract: XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps
Contextual Info: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode

STR-H2003

Abstract: STR-H2022 Sanken STR-H2022 STR-H2005 SEC165P2-24 seb80n2 led HG 740 nm STRH2022 SEB80N2-24 SEB100P2
Contextual Info: より明るく薄く、高効率に サンケン の ディスプレイ トータル ~CCFL（冷陰極蛍光放電管）からデバイス、 インバータ、電源モジュールまで∼ より大きく、明るく、そして鮮やかに、と日々進化するＴＶやモニタなどの液晶ディス

10zrl

Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

Contextual Info: VRM V Package Part Number Surface Mount MP3-306 Axial 600 Frame-2Pin Center-tap 30 I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 t rr 2

Contextual Info: VRM V Package Part Number Surface Mount MP3-306 Axial 600 Frame-2Pin Center-tap 30 I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 t rr 2