FMXG14 Search Results

FMX-G14S

Contextual Info: SANKEN ELECTRIC CO., LTD. FMX-G14S 1. Scope The present specifications shall apply to Sanken silicon diode, FMX-G14S. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification，etc. Flammability: UL94V-0 Equivalent 3. Absolute maximum ratings

AG01

Abstract: AL01 EG01 FMG-14S FMG-24S FML-14S FML-24S FML-G14S FMN-G14S FMX-G14S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V Ta R RM R RM (A) (°C) max max 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8

FMX-32S

Abstract: AG01 AL01 EG01 FMG-14S FMG-24S FML-14S FML-24S FML-G14S FMN-G14S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V Ta R RM R RM (A) (°C) max max 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

AG01

Abstract: AL01 EG01 FMG-14S FMG-24S FML-14S FML-24S FML-G14S FMN-G14S FMX-G14S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V Ta R RM R RM (A) (°C) max max 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

FMN1106S

Abstract: FMNS1106 FMXK-1086S FML-4204S capacitor+x2+GMF+40/100/21
Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks 600 IFSM (A) 50Hz Tj (°C) Tstg (°C) VF (V) max Single Half Sine Wave IF (A) IR IR(H) (mA) (µA) VR=VRM VR=VRM max max Tj (°C) trrq (ns) IF/IRP (mA)

Contextual Info: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

Contextual Info: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8

Contextual Info: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8

Contextual Info: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8

Contextual Info: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8

Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Axial (Body Diameter/Lead Diameter) Part Number 10.0 TO-220F（Center-tap） FMXB-2102 200 300 IF (A) IR(H) IR (µA) (mA) VR=VRM VR=VRM max

Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0

rjp 6065

Abstract: RJP 3045 ACS758 tda 7304 sla6805m OHD 3- 105M SLA6805MP tda 3640 pin diode tda 1053 ACS758LCB
Contextual Info: Bulletin No O03JF0 （Jan.,2010） 半導体総合カタログ I C トランジ スタ サ イリスタ ダ イオ ード サンケン電気株式会社 http://www.sanken-ele.co.jp 注意 ● 本書に記載されている内容は改良などにより予告なく変更することがありますので、最新の情報

FML4204S

Abstract: FMN-1106S FMN-2206S fmn2206s fmn1056s FML-4204S FMD-4206S FMNS-1106S FMX-4206S 4204S
Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Axial (Body Diameter/Lead Diameter) Part Number IF (A) Single Half Sine Wave IR IR(H) (µA) (mA) VR=VRM VR=VRM max max Ta (°C) trrq (ns) IF/IRP

FMN-1106S

Abstract: rvb 602 diode ry2a FMN 2206 RBV-3006 ry2a zener diode reference guide RU20x RK1X fmx4202s
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 194 Taping Specifications . 196