FLM14144 Search Results

FLM1414-4C

Contextual Info: p. FLM1414-4C Internally Matched Power GaAs FETs . J FEATURES • High Output Power: P-idg = 35.5dBm Typ. • High Gain: G-j^B = 5.0dB (Typ.) • High PAE: r iadd = 21% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed

Contextual Info: FLM1414-4F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: FLM1414-4C Internally Matched Power GaAs / / : 7 s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 25 w °c °c Total Power Dissipation pt Tc = 25°C Storage Temperature

Contextual Info: F L M 1 4 1 4 - 4 F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P ^ b = 36.0dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: r iadd = 27% (Typ.) Low IM3 = -46dBc@ Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz

FLL101ME

Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C
Contextual Info: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV ıiS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=25*0 t st (V) * ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)

fujitsu GHz gaas fet

Contextual Info: FLM1414-4F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: hadd = 27% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50W

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips

fujitsu gaas fet

Abstract: FLM1414-4F FLM14144
Contextual Info: FLM1414-4F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: INTERNALLY MATCHED POWER GaAs FETs X,Ku-BAND Electrical Characteristics (Ta = 25°C) PidB TYP. (dB) GtdB TYP. (dB) T)add TYP. (dB) f VDS id s (GHz) FLM8596-4C 36.0 7.5 30 FLM8596-8C 38.5 6.5 FLM0910-2 33.5 FLM0910-4C Part Number Rth (V) (mA) TYP. (°C/W)

FLM1414-4F

Abstract: fujitsu GHz gaas fet
Contextual Info: FLM1414-4F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: FLM1414-4C Finrrçil r UJ11DU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 35.5dBm Typ. High Gain: G ^ b = 5.0dB (Typ.) High PAE: riadd = 21% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Q

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking

FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of