FLC31 Search Results

High Power GaAs FET

Abstract: Fujitsu GaAs FET application note C-111A EIAJ ED-4701 111A RM1101 fujitsu gaas fet ED-4701 FLC317MG-4 High voltage GaAs FET FLC31
Contextual Info: FLC317MG-4 High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=34.8dBm Typ. ・High Gain: G1dB=9.5dB(Typ.) ・High PAE: ηadd=37%(Typ.) ・Proven Reliability ・Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for

FLC317MG-4

Abstract: S211 fujitsu gaas fet
Contextual Info: FLC317MG-4 - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G-j^B = 9.5dB(Typ.) High PAE: r iadd = 37%(Typ.) Proven Reliability

FLC317MG-4

Contextual Info: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for

Contextual Info: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: hadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for

Contextual Info: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for

Contextual Info: FLC311MG-4 FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r iadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC311MG-4 is a power GaAs FET that is designed for

flc311mg-4

Abstract: FLC311MG4 FLC311
Contextual Info: FLC311MG-4 F lltrn ;il J C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|dB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r iadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC311MG-4 is a power GaAs FET that is designed for

teledyne 640-1

Abstract: teledyne relay 640-1 teledyne 640-1 relay 640-1 relay 640-1 teledyne teledyne 640 relay TTL 7438
Contextual Info: W TELEDYNE SOLID STATE \ \ % V % 1 m • +' • ■- 1 • . ■ 1 flc317bbti aODDb3b SIE « T S S SSE D TELEDYNE SOLID STATE 1 -" SERENDIP SOLID STATE AC/DC RELAY T R A N S F O R M E R IS O L A T E D 8 0 m A / ± 5 0 V dc ELECTRICAL SPECIFICATIONS FEATURES

FLC317MG-4

Contextual Info: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for

37 TV samsung lcd Schematic circuit diagram

Abstract: schematic diagram inverter lcd monitor fujitsu lmg9970zwcc FLC31SVC6S schematic diagram crt tv sharp hitachi tx31 LT133X1-124 37 TV samsung lcd Schematic schematic diagram tv sharp sanyo schematic diagram dvd s1
Contextual Info: 65550/554/555 & 69000 HiQVideo Series Application Note Book Revision 1.0 June 1998  Copyright Notice Copyright 1998 Chips and Technologies, Inc., a subsidiary of Intel Corporation. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc., a subsidiary of Intel Corporation. You may not reproduce, transmit ,

Contextual Info: F LC 311 M G -4 C - t ì a n d Power ni. Is h E l s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25 C Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 15 w Total Power Dissipation Tc = 25°C Pt Storage Temperature

schematic diagram crt tv samsung

Abstract: schematic diagram crt tv sharp schematic diagram inverter lcd monitor fujitsu P24R10 37 TV samsung lcd Schematic circuit diagram pcb circuit diagram of crt tv samsung FLC31SVC6S toshiba notebook schematic diagram free CT1642 samsung crt monitor circuit diagram
Contextual Info: 65550/554/555 & 69000 HiQVideo Series Application Note Book Revision 1.1 December 1998  Copyright Notice Copyright 1998 Chips and Technologies, Inc., a subsidiary of Intel Corporation. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc., a subsidiary of Intel Corporation. You may not reproduce, transmit ,

samsung dl6

Abstract: LMG9970ZWCC FR27 FR37 TX30D01VC1CAA edmgr LQ14X01 NL8060BC31-01 fr17 TX31D*VC1CAA
Contextual Info: 6555x HiQVideo Series Panel Interface Information Application Note Revision 1.1 May 1997
  Copyright Notice Copyright 1997 Chips and Technologies, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc. You may not reproduce, transmit,

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

transistor z0127 MA

Abstract: ImpacTV2 YM 1104 YAMAHA CLEVO htc hd2 LCD flex connector MD7 LC 2716 2N007 VCC3 2456 23 new bright R288 RO5 9435
Contextual Info: 1 2 3 2800/2820/2850 4 5 Notebook Computer 6 7 Service Manual 8 i Preface NOTICE The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any

FLC081XP

Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
Contextual Info: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A

MD7 LC 2716

Abstract: MD7 LC 2716 VOLTAGE CLEVO ati rage 128 amc ver 2.0 RO3 9435 QM723 96v inverter circuit diagrams 2N1072 R5C475II TX36D85VC
Contextual Info: 1 2 3 2800/2820/2850 4 5 Notebook Computer 6 7 Service Manual 8 i Preface NOTICE The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking

FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of

29F400TA

Abstract: FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA
Contextual Info: Index Page Document code Series Series Series Series Series 33 35 36 37 31 - CG51 Series D 5 C B Series D1 F1 Series F2 Series F3 Series 32 112 113 113 113 D S0 4 -2 3 1 1 1 -1 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E F4C Series (T1)