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FLC253 Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLC253MH-6		Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	46.18KB	1
FLC253MH-6		Unknown	FET Data Book	Scan	PDF	103.5KB	2
FLC253MH-8		Unknown	FET Data Book	Scan	PDF	103.5KB	2
FLC253MHXIII8		Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	47.89KB	1

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FUJITSU Limited FLC253MH-6 TRANSISTOR,MESFET,N-CHAN,15V V(BR)DSS,SOT-437AVAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLC253MH-6		144			1 $96.86 10 $96.86 100 $75.07 1000 $72.65 10000 $72.65	Buy Now
FUJITSU Semiconductor Limited FLC253MH-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLC253MH-8		1			1 $366.49 10 $366.49 100 $366.49 1000 $366.49 10000 $366.49	Buy Now
Fuji Electric Co Ltd FLC253MH6 INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	FLC253MH6		29			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FLC253 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FLC253MH8 Contextual Info: F, , FLC253MH-8 J C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-\|<jB = 34.0dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 35%(Typ.) ProvenReliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC253MH-8 is a power GaAs FET that is designed for general	OCR Scan	flc253mh-8 flc253mh8	PDF
FLC253MH-6 Contextual Info: FLC253MH-6 C -tìa n d Power ìaA s FETs ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 15 w Total Power Dissipation Pt Tc = 25°C Storage Temperature Tstg	OCR Scan	flc253mh-6 volt26	PDF
FLC253MH-8 Abstract: q050 FLC253MH8 0/FLC253MH-8 Contextual Info: F\|.fjU-,. FLC253MH-8 rU JlljU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-i ^ b = 34.0dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: r iadd = 35%(Typ.) ProvenReliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC253MH-8 is a power GaAs FET that is designed for general	OCR Scan	flc253mh-8 q050 flc253mh8 0/flc253mh-8	PDF
FLC253MH-6 Contextual Info: F, , FLC253MH-6 J C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-\|<jB = 34.0dBm Typ. High Gain: G ^ b = 9.0dB(Typ.) High PAE: r iadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC253MH-6 is a power GaAs FET that is designed for general	OCR Scan	flc253mh-6	PDF
FLC253MH-6 Abstract: FLC253MH6 FLC253 Contextual Info: FLC253MH-6 fujTtsu C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-\|dB = 34.0dBm Typ. High Gain: G ^ b = 9.0dB(Typ.) High PAE: riadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC253MH-6 is a power GaAs FET that is designed for general	OCR Scan	flc253mh-6 flc253mh6 flc253	PDF
FLL55 Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME Contextual Info: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.	OCR Scan	flu10xm flu17xm flu35xm fll101me +11fll171me fll351me fll55mk fll120mk fll200ib-1 fll200ib-2 fll55 flc253mh-6 fll300ip-2 flu10 fll171	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan	flc301xp flc301xp equivalent flk052xp fujitsu gaas fet application note +6iss1b1 cs98e1v6r800-k41d cs98e1v6r000-k41b fujitsu "application notes fjs-ds-158 fll171	PDF
FLC081XP Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA Contextual Info: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A	OCR Scan	fhx05x fhx06fa/lg fhx06x fhx15faag +14fhx35lg 27dbin flc253mh-8 flc301mg-8 flc311mg-4 flk012wf flc081xp flc253mh-6 flc091wf flc053wg flc103wg flk022wg flk052wg fhx15fa	PDF
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan	fmc141401-02 fujitsu gaas marking code fujitsu k022 fll300-2 +6fll55 fsx52wf fujitsu l101 fujitsu x51 fll200-2 fll300-1	PDF
FSX52WF Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of	OCR Scan	flx202mh-12 flk202mh-14 fsx52wf fujitsu "application notes +8fsx51wf nf037 fmc141401-02 fll101 fll171 fmc1414p1-02 fll55 fll120mk	PDF