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Am27C020

Contextual Info: a Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 90 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to

AMD 27C040

Abstract: 27c040
Contextual Info: Advanced Micro Devices Am27C040 4 Megabit 524,288 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — Typical programm ing tim e of 1 minute — 100 ns ■ Latch-up protected to 100 mA from -1 V to ■ Low power consumption

Contextual Info: Am27C512 OTP 65,536 x 8-Bit CMOS One-Time Programmable ROM OTPROM Am27C512 OTP ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • Fast access time — 200 ns Low-power dissipation Both interactive and new Flashrite* programming algo­ rithms available

Contextual Info: Advanced Micro Devices Am27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply ■ Fast Flashrite programming — R e g u la te d p o w e r s u p p ly 3 .0 V - 3 .6 V — U n re g u la te d p o w e r s u p p ly 2 .7 V - 3 .6 V

Product Selector Guide

Contextual Info: AMD£I FINAL Am27C2048 2 Megabit 131,072 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ ±10% power supply tolerance standard ■ 100% Flashrite programming — 55 ns maximum access time ■ Low power consumption — Typical programming time of 16 seconds

Contextual Info: FINAL Am27C2048 2 Megabit 128 K x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance standard ■ Fast access time ■ 100% Flashrite programming — Speed options as fast as 55 ns ■ Low power consumption — Typical programming time of 16 seconds

Contextual Info: FINAL a Advanced Micro Devices Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 85 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from -1 V to

Contextual Info: FINAL A M D ii Am27C040 4 Megabit 512 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply — Available in speed options as fast as 90 ns ■ Low power consumption ■ ±10% power supply tolerance standard ■ 100% Flashrite programming

Contextual Info: FINAL AMDZ1 Am27C4096 4 Megabit 256 K x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply ■ ±10% power supply tolerance standard — Speed options as fast as 90 ns ■ Low power consumption ■ 100% Flashrite programming

AM27256

Abstract: AM27256-25 AM27256 150 27128A-2 27128A-20 27128A-25 2764A-2 2764A-20 C0009 Am27128A
Contextual Info: 8-BIT OTPROM FAMILY Am2764A, Am 27128A, Am 27256 8-BIT DISTINCTIVE CHARACTERISTICS Fast access tim es — as low as 200 ns Low-power dissipation Both interactive and new Flashrite* programming algorlthms available • Single + 5-V power supply • TTL-com patible Inputs and outputs

AMD am2 socket pinout

Abstract: 2575S5 amd AM2 pinout AMD socket AM2 pinout v020 pinout AM2 AMD AM27LV020
Contextual Info: PRELIM IN ARY Advanced Micro Devices Am27LV020/Am27LV020B 2 Megabit 262,144 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS 100% Flashrite programming — Typical programming time of 32 seconds • Single 3.3 V power supply — Regulated power supply 3.0 V -3 .6 V

CLV044

Abstract: 56497
Contextual Info: ZI FINAL Am27C1024 Advanced Micro Devices 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from -1 V to

D0304

Abstract: T-46
Contextual Info: ADV MI CRO MEMORY 4ÖE 02S7S2Ö J> 003D4S3 h • AMD4 T - 46-13-29 Advanced Micro Devices A m 2 7 C 1 0 2 4 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrite programming ■ Fast access tim e — 100 ns ■ Low power consumption:

AM28F020

Abstract: qu34 A03404
Contextual Info: Am28F020 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ ■ ■ CMOS Low power consumption ■ — 100 n A m a xim um s ta n d b y c u rre n t Flashrite Programming

AM27C020

Abstract: AM27C020-120
Contextual Info: FINAL Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance standard on most speeds ■ Fast access time — 70 ns ■ Low power consumption ■ 100% Flashrite programming — 100 µA maximum CMOS standby current

a1334

Contextual Info: FINAL AMDÌ1 Am27C1024 1 Megabit 65 K x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance standard ■ Fast access time — Speed options as fast as 55 ns ■ 100% Flashrite programming ■ Low power consumption — Typical programming time of 8 seconds

Contextual Info: Am27C1024 Advanced Micro Devices 1 Megabit 65,536 X 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time 100% Flashrite programming — 7 0 ns — T yp ica l p ro g ra m m in g tim e o f 8 s e c o n d s ■ Low power consumption — 20 Latch-up protected to 100 mA from -1 V to

M27C020

Abstract: Am27CQ2Q 27c020-12
Contextual Info: F IN A L A M D il Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 55 ns maximum access time — Typical programming time of 32 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to

Contextual Info: FINAL A M D il Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — Speed options as fast as 45 ns — Typical programming time of 16 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to

AM27C020

Abstract: AM27C020-120 AM27C020-150
Contextual Info: FINAL Am27C020 2 Megabit 256 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply ■ ±10% power supply tolerance standard — Speed options as fast as 55 ns ■ Low power consumption ■ 100% Flashrite programming

Contextual Info: FINAL Advanced Micro Devices Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from –1 V to

AM27C020

Contextual Info: FINAL AMDZ1 Am27C020 2 Megabit 256 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply ■ ±10% power supply tolerance standard — Speed options as fast as 55 ns ■ Low power consumption ■ 100% Flashrite programming

AM27C010

Abstract: 032-32-Pin AM27C010 Revision A
Contextual Info: FINAL A M D ii Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — Speed options as fast as 45 ns ■ — Typical program m ing tim e of 16 seconds Low power consumption ■ Latch-up protected to 100 mA from -1 V to

AM27C1024

Contextual Info: ADV MI CRO MEMORY b4E D • DES7SEÖ □ □ 3 1 ci 71 5b4 Advanced Micro Devices A m 27C 1024 1 Megabit (6a,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 85 ns — Typical programming time of 8 seconds