FET 547 Search Results

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

MGF1907

Abstract: MGF1907A mgf1302 MGF1302 equivalent
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1907A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1907A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and

fet K 793

Abstract: MGF1402 cdb 838 S22VS MGF1402B Q017 91 569 775 -35 S 30ria
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> • b24tlfl2ti 0017040 b47 ■ MGF1402B LOW NOISE GaAs FET DESCRIPTION OU TLINE DRAWING The MGF1402B low-noise GaAs FET w ith an N-channel Schottky gate is designed fo r use in S to X band ampli­ fiers and oscillators. The hermetically sealed metalceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1 902 B is a low noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 9 0 2 B isa lo w noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed metalceramic package assures m inim um parasitic losses, and

NEC Ga FET marking L

Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
Contextual Info: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm

9085 d

Abstract: ic fet 547 fet 547 MA644 9415
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION small size handheld radio. FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm APPLICATION PDC 0.8G Hz ABSOLUTE MAXIMUM RATINGS Tc Ratings

fet 547

Abstract: MA644 FA01219A 90 HYBRID 70 mhz rf power acp 100k
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm

S 170 MOSFET TRANSISTOR

Abstract: TB-547 TO247 package
Contextual Info: MOTOROLA Order this document by MTW6N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW6N100E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1.5 OHM

mj 1504 transistor

Abstract: transistor mj 1504 TB-547 AN569 MTV6N100E SMD310 surface mount diode 735 motorola make of mj 1504 transistor
Contextual Info: MOTOROLA Order this document by MTV6N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount Designer's MTV6N100E TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1.5 OHM N–Channel Enhancement–Mode Silicon Gate

D2504 transistor

Abstract: d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 NE329S01
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent low

Contextual Info: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general

Contextual Info: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general

Eudyna Devices

Abstract: FLC167WF
Contextual Info: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general

FLC167WF

Abstract: flc167
Contextual Info: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general

NEC 2561

Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Contextual Info: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym

FLK202XV

Contextual Info: FLK202XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G -j^B = 6.0dB(Typ.) High PAE: r iadd = 27% (Typ.) Proven Reliability DESCRIPTION The FLK202XV chip is a pow er GaAs FET that is designed

Contextual Info: MOTOROLA O rder this docum ent by M TW 6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW6N100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 W ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

Contextual Info: MOTOROLA O rder this docum ent by M TV6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV6N 100E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TM OS POWER FET 6.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate

4963 MOSFET

Abstract: 6N diode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTV6N100E TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1-5 OHM N-Channel Enhancement-Mode Silicon Gate The D3PAK package has the capability of housing the largest chip

s-parameter s11 s12 s21 10000

Abstract: nec 151 C10535E NE721S01 NE721S01-T1 NE721S01-T1B nec 7912 um 741 AN 17821 audio
Contextual Info: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7 dB TYP. @f = 12 GHz PACKAGE DIMENSIONS • Gate Length: Lg = 0.8 µm recessed gate (Unit: mm) • Gate Width: Wg = 330 µm

NE24200

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 24 3 GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE24200 is a pseudomorphic Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and

NE32400

Abstract: NE32400M NE32400N
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip