ACP50 Search Results

2CSC400002D0903

Abstract: 2CSG210200R1211 ABB E 257 C30-230 S465502 2CSG035100R1211 2CSG210100R1211 ABB SACE sn 125 EA1733 LCD TV SCHEMA S550284
Contextual Info: Catalogo tecnico System pro M compact System pro M Interruttori magnetotermici, differenziali e apparecchi modulari per impianti in bassa tensione System pro M compact® - System pro M Per tener conto dell’evoluzione delle Norme e dei materiali, le caratteristiche e le dimensioni di ingombro indicate nel presente

KGF2511

Abstract: ACP-100k
Contextual Info: This version: Oct. 1998 Previous version: — E2Q0056-18-X2 ¡ electronic components KGF2511 ¡ electronic components KGF2511 Medium Power Amplifier for UHF band GENERAL DESCRIPTION The KGF2511 is a medium power amplifier for UHF band that features high output power, high

IEC 269-2

Abstract: abb SACE csa 932 abb ABB SACE S.p.a 930-S 10,3X38 ABB ABB SACE 125 14X51 IEC 947-3 933N
Contextual Info: E 930 fuse holders Customized protection for fuses of all sizes 603052/011 The wide range of ABB SACE System pro M modular devices has been extended with the E 930 series of fuse holders with new enhanced performance levels including operating at up to 690 V a.c.

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01227 Preliminary GaAs FET HYBRID IC Specifications are subject to change without notice. 1. 7MAX DESCRIPTION FA01227 is RF Hybrid IC designed for • 0.8GHz band small size handheld radio. H a » a FEATURES Low voltage

9085 d

Abstract: ic fet 547 fet 547 MA644 9415
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION small size handheld radio. FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm APPLICATION PDC 0.8G Hz ABSOLUTE MAXIMUM RATINGS Tc Ratings

KGF2512

Abstract: 100w amplifire
Contextual Info: This version: Oct. 1998 Previous version: — E2Q0057-18-X1 ¡ electronic components KGF2512 ¡ electronic components KGF2512 Midium Power Amplifier for L-band GENERAL DESCRIPTION The KGF2512 is a midium power amplifier for L-band that features high output power, high

High voltage GaAs FET

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC DESCRIPTION FA01220A is RF Hybrid IC designed for 1.5GHz band small size handheld radio. FEATURES • Low voltage 3.5V • High gain 20.5B • High efficiency 50% • High power 30.5dBm APPLICATION

Contextual Info: 01.09.03 P0421551H 1.5 GHz band ♦ Features Power Amplifier Module • Low voltage operation of 4.8 V with negative voltage of -3 V • 1477 - 1487 MHz frequency band • Typical P1dB of 30 dBm • Excellent Adjacent Channel Leakage Power • Typical 36 dB power gain

PDC800

Abstract: 9aax
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA 0 12 3 4 P r e l i m i n a r y y GaAs FET h y b r id ic DESCRIPTION FA01234 is RF Hybrid IC designed for 0.8GHz band small size handheld radio. FEATURES Low voltage 3.6V High gain 26dB High efficiency 60% High power 29.7dBm

IBEK

Contextual Info: IBEK 5 Watt AC-DC-Converter Family ACP5 www.ibek.ch Single & double outputs Input to output isolated • • • • • • • • • Ultra wide 1:3 input voltage ranges Very high efficiency up to 80% Very low output voltage noise High reliability Continuous no-load and short circuit proof

450 khz filter

Abstract: AN6227FHN
Contextual Info: 移動体通信用 IC AN6227FHN 1.5 GHz PDC送受信 1チップ IC 5.20±0.10 5.00 12 8 24 (0.77) 1 7 8 24 (0 .1 5) (0.44) • 携帯電話(1.5 GHz PDC) Seating plane 0.10 4.00±0.10 (1.10) (0.77) 3.00±0.10 • 用 途 0.20±0.10 R0.30 • 受信スリープ機能内蔵

Contextual Info: Photoelectrics Diffuse-reflective, Transistor Output Type PC50CND10BA • • • • • • • • • • Range: 1 m Adjustable sensitivity Modulated, infrared light Supply voltage: 10 to 30 VDC Output: 200 mA, NPN or PNP Make and break switching function selectable

acp 100k

Abstract: ACP-100k FA01220A
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01220A is RF Hybrid IC designed for 1.5GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 20.5B • High efficiency 50% • High power 30.5dBm

PR221DS sace tmax

Abstract: ABB RD2 earth leakage relay 2CSC400002D0205 mccb 60947-2 max zs ABB Sace Tmax S941N C2 60947-2 MAX EARTH LOOP IMPEDANCE BSEN 60898 R0427 50Hz to 60Hz 400v circuit diagram SQZ3
Contextual Info: Technical catalogue System pro M compact and other modular devices for low voltage installation System pro M compact® and other modular devices for low voltage installation In consideration of modifications to Standards and materials, the characteristics

midium power uhf transistor

Abstract: KGF2511 marking ACP
Contextual Info: This version: Oct. 1998 Previous version: — E2Q0056-18-X1 ¡ electronic components KGF2511 ¡ electronic components KGF2511 Midium Power Amplifier for UHF band GENERAL DESCRIPTION The KGF2511 is a midium power amplifier for UHF band that features high output power, high

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01229 Preliminary GaAs FET HYBRID IC Specifications are subject to change without notice. T 114-11 1 DESCRIPTION FA01229 is RF Hybrid IC designed for 1.5GHz band small size handheld radio. » « H " d e » FEATURES Low voltage

CCII APPLICATION

Abstract: PDC1500 FA01231
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA 0 1 2 3 1 P r e l i m i n a r y ^ 0T\ V £ *. GaAs FET HYBRID IC DESCRIPTION FA01231 is RF Hybrid IC designed for 1.5GHz band small size handheld radio. FEATURES Low voltage High gain High efficiency High power 3. 5 ± 0. 3

Contextual Info: GaAs MMICs GN01067B GaAs IC with built-in ferroelectric For the preamplifier of the transmitting section in a cellular phone unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 +0.1 6 0.5 –0.05 ● Amplifier with high-gain AGC function

fet 547

Abstract: MA644 FA01219A 90 HYBRID 70 mhz rf power acp 100k
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm

PC50CND

Abstract: PC50CND10BA PC50CND10BAM1
Contextual Info: Photoelectrics Diffuse-reflective, Transistor Output Type PC50CND10BA • • • • • • • • • • Product Description Range: 1 m Adjustable sensitivity Modulated, infrared light Supply voltage: 10 to 30 VDC Output: 200 mA, NPN or PNP Make and break switching function selectable

GN01067

Contextual Info: GaAs MMICs GN01067B GaAs IC with built-in ferroelectric For the preamplifier of the transmitting section in a cellular phone unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo