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    FA01234 Search Results

    FA01234 Datasheets Context Search

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    PDC800

    Abstract: 9aax
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA 0 12 3 4 P r e l i m i n a r y y GaAs FET h y b r id ic DESCRIPTION FA01234 is RF Hybrid IC designed for 0.8GHz band small size handheld radio. FEATURES Low voltage 3.6V High gain 26dB High efficiency 60% High power 29.7dBm


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    fa01234pdc800acp5050khz+4acp100100khz00/may/24th9aax PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


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    m6sta-005va/wa/samf-156sta-006va/wa/samf-156sra-002va/wa/samf-622sta-004va/wa/sa+16mf-622sta-005va/wa/samf-622sta-006va/wa/samf-622sra-002va/wa/samf-2500sta-002va/wa003va/wa004va/wac42v5964mgf1302 transistormgf1601mgfc1402m57721m67760lch2 marking sot-89 mmic2sc5125mitsubishi m57710-am68776 PDF