S22VS Search Results

MMIC SWITCH

Abstract: RTPA5250-130
Contextual Info: RTPA5250-130 3.3V UNII Band Power Amplifier/Switch MMIC Module for WLAN ADVANCED INFORMATION Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information

f4316

Abstract: F4319F MGF4319F
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series ! S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0F series super-low -noise HEMT High Electron M o b ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

mitsubishi microwave

Abstract: MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S cho ttky g a te, is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed m etalceram ic package assures m inim um parasitic losses, and

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF0904A L, S BAND POWER GaAs FET DESCRIPTION The M G F 0 9 0 4 A , GaAs OUTLINE DRAWING F E T w ith an N-channel schottky U n it: m illim e te rs inches gate, is designed fo r use in U H F band am plifiers. FEATURES

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> | M G F0906B | _ L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. I S Unit: millimeters 17.5 FEATURES

Contextual Info: SMD 1575.42MHz SAW Filter AFS1575.42W90-TS5 Pb RoHS Compliant FEATURES: • Low insertion loss 2.2dB max • 2.5 x 2.0 x 1.0mm • Suitable for RoHS reflow profile 2.5 x 2.0 x 1.0mm | | | | | | | | | | | | | | APPLICATIONS: • GPS STANDARD SPECIFICATIONS:

Contextual Info: SMD 1575.42MHz SAW Filter AFS1575.42W90-TS5 Pb RoHS Compliant FEATURES: • Low insertion loss 2.2dB max • 2.5 x 2.0 x 1.0mm • Suitable for RoHS reflow profile 2.5 x 2.0 x 1.0mm | | | | | | | | | | | | | | APPLICATIONS: • GPS STANDARD SPECIFICATIONS:

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 37V 404S 1 4 .0 — 14.5G H z BAND SW INTERNALLY MATCHED GaAs FET DESCRIPTION T he M G F K 3 7 V 4 0 4 5 is an internally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 .0 ~ 14.5 G H z-band am plifiers. The herm etically sealed m etal-ceram ic

DIVERSITY MODULE MURATA

Abstract: raytheon ltcc 78-S11 RAYTHEON RTPA5250-130 murata ltcc grm39 MAXB68 16qam-modulated power amplifier mmic
Contextual Info: RTPA5250-130 3.3V UNII Band Power Amplifier MMIC/Switch Module for WLAN Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING Unit:millimeiers The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. y FEATURES • High output power PidB=38dBm(TYP.)

ha 1406 ha

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package

Contextual Info: De | aiBMb^B □ DO DOS S L Transistor Absolute Maximum Ratings CaseTemperature*25°C -Symbols Features v • Usable to 4 GHz • Rugged Hermetic Package V .c b o . VcEO - V ebo Description . Ic Pt The SCA 0 0 0 5 is a small signal NPN RF-UHF silicon bipolar transistor, With ft—2.2 GHz, the device is

CAPACITOR SM

Abstract: S11V ID11 CL10B103KBNC LL1608-FS27NJ SGL-0263 S12vs inductor manufact
Contextual Info: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices’ SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as

Contextual Info: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices’ SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0907B L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 7 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. U nit; n il lt r FEATURES • • Class A operation