S11V Search Results

CAPACITOR SM

Abstract: S11V ID11 CL10B103KBNC LL1608-FS27NJ SGL-0263 S12vs inductor manufact
Contextual Info: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices’ SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as

XL1019-DA-EV1

Abstract: XL1016 XL1016-DA XL1019-DA
Contextual Info: 0.5-1.6 GHz GaAs pHEMT Current Adjustable, Low Noise Amplifier L1016-DA March 2010 - Rev 23-Mar-10 Features Low Noise Figure Excellent Input Return Loss Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor 20-80 mA

L1019

Abstract: XL1019-DA-EV1 XL1019-DA xl1016-da L1019-DA XL1019-DA-0G00
Contextual Info: 1.4-4.0 GHz GaAs pHEMT Current Adjustable, Low Noise Amplifier L1019-DA March 2010 - Rev 18-Mar-10 Features Low Noise Figure Excellent input Return Loss Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor 20-80 mA

FX-102

Abstract: MS-212 TCL04 TRANSISTOR BC 187 mPD78023
Contextual Info: mPD78024 SUBSERIES 8-BIT SINGLE-CHIP MICROCOMPUTER mPD78023 mPD78024 mPD78P024 1994 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan PREFACE Intended Readership This manual has been prepared for user engineers who want to understand the

transistor 1800MHz

Contextual Info: SONY PRELIMINARY DATA SHEET Dual-Band 3 Volt Power Amplifier for GSM900/1800 Applications CXG1047FN - Dual Band The CXG1047 Dual Band GaAs PA is a 3 Stage Power Amplifier that may be used for both GSM900 and GSM1800 applications. To achieve minimum die-size and package dimensions, it contains one amplifier

Contextual Info: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices’ SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as

Contextual Info: Housing Model Nc. C ir­ c uits Q -•/1 hag D menstons mm<n. Standard type Retainer mountable 2 XAP-Q2Y-1 XARP-02V 3 XAP-Q3Y-1 XARP-03V 5.0 .197] 4 XAP-04V-1 X ARP-04V 7.5{ .295] 5 XAP-05V-1 XARP-05V 6 XAP-06V-1 XARP-06V 7 XAP-07V-1 XARP-07V F=sr=r S'j'd ir: