12GH2 Search Results

MWT-A970

Abstract: AVC 703
Contextual Info: MwT-A9 18 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y r +24.5 dBm OUTPUT POWER AT 12 GHz 9 dB SMALL SIGNAL GAIN AT 12 GHz 1.6 dB NOISE FIGURE AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE

0g18

Abstract: 0G66
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET D E S C R IP T IO N The M G F 1 4 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band am pli­ fiers. The hermetically sealed metal-ceram ic package as­

Contextual Info: MwT-S7 18 GHz High Gain, Low Noise GaAs FET MICROWAVE TECHNOLOGY n • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 250 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO

2388

Abstract: 1S80
Contextual Info: S M F -0 6 0 2 0 e itC T A O N « Sam sung M icrow ave Sem iconductor P O W O r O p t im iz e d GaAs FET 2-14 GHz Description Features The SMF-06020 Is a packaged version of the SMF-06000. The chip Is a 600 urn n-channel M ES FET with 0.5 jim gate length, utilizing Samsung Microwave’s power optimized P5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1 902 B is a low noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and