Q017 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 Q017b32 32fi I SHGK PRELIMINARY KM616V513 CMOS SRAM 32,768 W O RD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast A cc e s s Tim e: 17, 20, 25n s (M ax.) • Low Pow er D issipation

2N4859

Abstract: 2N4858
Contextual Info: / II N AMER PHILIPS/DISCRETE 25E » • ‘ \ ~ fafc53131 Q0174TS 1 ■ 11 2N4856 to 4861 _ Jv N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes with the gate connected to the case. The transistors are intended fo r low power, chopper

M67710H

Abstract: M67710
Contextual Info: H 11Ô B S Q0173S4 b27 • M IT S U I. RF POWE« MOOOLE M67710H 150-175MHz, 9.6V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm 45+1 42 + 1 2 -R Î.5 ± 0 .3 Z . € ¥ ir> o +f _ ? «0.4 ± 0.2 5+ 1 9±1 9±1 PIN : 5 + 1 8.5 + 1 P in : RF INPUT

BFG51

Contextual Info: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.

Contextual Info: ^ TOSHIBA -CDISCRETE/0PT03- 9097250 TOSHIBA «DISCRETE/OPTO DE I ^0^7550 Q0171bS 4 | 99D 17165 TLY260 GaAsP YELLOW LIGHT EMISSION Unit in tnm FEATURES! . All Plastic Mold Type : Light Yellow Transparent Lens . Wide Radiation Pattern-Suitable for Backlighting

M57797SL

Contextual Info: bEHTÖB'i Q0173Ü2 55e! • MITSUBISHI RF POWER MODULE M57797SL 350-380MHZ, 12.5V, 7W, FM PORTABLE RADIO ABSOLUTE MAXIMUM RATINGS Te —25*0 unless otherwise noted Symbol Vcc V bb Icc PinCmax) Po(max) Tc(OP) Tstg Parameter Supply voltage Base bias Total current

HCT1213

Abstract: 74HCT257
Contextual Info: T - L o n - i- 1 - 5 I Technical Data. CD54/74HC257 CD54/74HCT257 File Number HARRIS S E MICOND SECTOR 27E D 1650 43G2271 Q017733 1 BiHAS High-Speed CMOS Logic Ilo — Ï - - - 2 I0 - 3 l n - Ü 5 T ± _ 1 V 2Y — 3Y a it— 5 ! ^ 4 Y O 1— H i - 1 311 — 1 ^

Contextual Info: BSP 50. BSP 52 NPN Silicon Darlington Transistors 32E D • ISIP 0231=320 Q017Q73 Q SIEMENS/ SPCL ■, SEMICONDS T '3 3 - 3 - 7 • High collector current • Low collector -emitter saturation voltage • Complementary types: BSP 60.BSP 62 PNP Type Marking

Contextual Info: BEE D • Ö23b320 Q017124 2 ■ SIP SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS • • • • • BSP 315 T ~ 2 * 1 'O S ' SIPMOS - enhancement mode Drain-source voltage = -50V Continuous drain current l 0 - -1.0A Draln-souros on-reslstance Ros<on> = .9 5 0

Contextual Info: 3SE D • Ö53b320 Q017QÛ3 3 Hi SIP SIPMOS N Channel MOSFET T - 2 1 ' -O S ' SIEMENS/ SPCLi SEMICONDS BSP 88 Preliminary Data • • • • • SIPMOS - enhancement mode Drain-source voltage Vos = 240V Continuous drain current l B = 0.29A Drain-source on-resistance

53d sot

Abstract: ELLS 110 TC35083P
Contextual Info: blE D • q0172M6 Q024S2Ô b3S MTQS2 CMOS A/D CONVERTER TOSHIBA L06IC/HEH0RY (10-BIT A -D CONVERTER) 1. GENERAL DESCRIPTION TC35083P The TC35083P/F is a high precision.and high speed m o n o lith ic CM OS 1 0 -b it su c c e ssiv e approximation A-D converter with a 10-bit parallel

RCA-CA3059

Abstract: rca t4706d RCA T2806D rca ca3079 T2806C IC GA-08 TO-213AA Package T2806M T6416D T4706D
Contextual Info: 387 5081 G È SOLID STATE "qi DE I 3Ö7S0Ö1 Q017ñEñ 3 i ~ T - • ■ Triaca T -tP S -z S ' File Num ber 406 Zero-Voltage-Switched Types 6-40 A, 200-600 V Silicon Triacs For Use With IC Zero-Voltage Switches For Power-Control and Switching Applications at 50-60 Hz

Contextual Info: b5M1621 Q0171SÛ 773 • MITSUBISHI RF POWER MODULE M57714M 430-450MHZ, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm PIN : Rn : RF INPUT V C C I : 1st. DC SUPPLY ® V C C 2 : 2nd. DC SUPPLY ® V C C 3 : 3rd. DC SUPPLY ®PO

Contextual Info: 32E D • 023b3SQ Q017027 H H S I P NPN Silicon RF Transistor —» 0 1 . 1 7 BFR93P SIEMENS/ SPCLn SEMICONDS ' ' _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: • MITSUBISHI RF POWER MODULE bE^^äB^ Q017E7L 307 ■ M57788M 430-450MHZ, 12.5V, 40W, FM MOBILE RADIO BLOCK DIAGRAM PIN : ©Pin : RF INPUT V c c i : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY @VCC3 : 3rd. DC SUPPLY ® P0 : RF OUTPUT ®GND : FIN ABSOLUTE MAXIMUM RATINGS To = 2 5 ^ unless otherwise noted

TA2765

Abstract: RCA-2N5239 2N5239 2N5240 TA2765A 17165 RCA Solid State Power Transistor gi clare rca cmc rca+2n5240
Contextual Info: 01 DE J 3075001 Q0171b4 1 3 8 7 5 Ö 8 T ~ g T E SOLID STATE High-Voltage Power Transistors 0 IE 17164 D , _ _ 2N5239, 2N5240 File Number 321 High-Voltage, Silicon N-P-N Transistors For Hicih-Soeed Switching and Linear-Amplifier Applications in

TA7688P

Abstract: 2CA1015GR VQC10 CAPACITOR 75 680 4J TA7688F 2ca10 circuit diagram of 4 channel long range IR based ta7688 CAPACITOR 60 680 4J
Contextual Info: i>ËJ ^ 7 2 4 7 Q017512 5 | ~ TOSHIBA-, ELECTRONIC GE Unit in mm DUAL HEADPHONE'DRIVER 3V USE The TA7688F/P are dual headphone driver ICS designed for portable cassette player applications. . Flat Package 16 pin (TA7688F), DIP 16 pin (TA7688P) . Small Installed Area and Few External Parts

Contextual Info: FCN-234D/235D*-g/* FCN-237R*-g/* FCN-238P040-G/* STRADDLE MOUNT PLUG MII/100 base T DIMENSIONS CD i H □ a > □ 3 i g “LI 'h .j J . Lf CD FCN-238P040-G/F A=1.1±0-3) Unit: mm (in.) 2-38 • 374^751, Q017L3D A4b August 1995

Contextual Info: ^ 2 4 ^ 2 ^ Q017323 TS3 • MITSUBISHI RFPOWER MODULE M67703H 450-470MHZ, 12.5V, 50W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : Rn VCC1 ®VCC2 ® PO ®GND : RF INPUT : 1st. DC SU P P L Y : 2nd. DC SU P P L Y : RF O U TPU T : FIN

TLM8202

Contextual Info: TO S H I B A O I S C R E T E / O P T O } 9097250 T O S H IB A TT D IS C R E T E /O P T O D E « ^0^7250 Q017303 99D 17303 D T - M l - ‘h l ’ TLM8202 2 0 -P 0 IN T 2-CHANNEL BAR PO INT DISPLAY • State of Displays 20-Point (Green : 12-Point, Yellow : 4-Point, Red : 4-Point), 2 Channel Display.

Contextual Info: BEE D • 023fc.32Q Q0171b7 = « S I P SIPMOS N Channel MOSFET _ S IE M E N S / SPCLi BSS 138 X ^ Z S ' ^ S T _ S EM IC O N D S • SIPMOS - enhancement mode • Draln-source voltage Vt» = 50V • Continuous drain current Io = 0.22A • Drain-source on-resistance

B80C

Contextual Info: B EE D • ô23b32Q Q017131 T « SIP PNP Silicon Switching Transistors _ S IE M E N S / SPCLi BSS 80 BSS 82 T ' SEM ICO N D S _ High D C current gain Low collector-emitter saturation voltage Complementary types: B S S 79, B S S 81 NPN Type BSS

Contextual Info: N AMER PHILIPS/DISCRETE n r •' btS3T31 Q017257•1 ■ * 2SE D BSJ174 TO 177 T - 3 7 -3 5 " J P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction FETs in a plastic TO-92 envelope and intended for application with anarog switches, choppers, commutators etc.

Contextual Info: bbSBTSl Q0175S3 4 N AMER PHILIPS/DISCRETE 55E D BSJ111 BSJ112 BSJ113 JV N-CHANNEL SILICO N FIELD -EFFECT T R A N SIST O R S Symmetrical silicon n-channel junction FET s in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.