F 630 TRANSISTOR Search Results

BF 414

Abstract: to92d bc 640 ce bc 630
Contextual Info: Transistoren Transistors GaAs MMICs Breitbandverstärker Type GaAs MMICs Broadband Amplifiers Maximum Ratings Characteristics {TA = 25 °C lap mA G dB 2 160 2 160 Vs V Ptot • CGY 21 6.0 ■ CGY 31 6.0 W F ' dB 21.0 1.5 3.9 19 100 . 900 TO-12 48 18.0 2.0

PCOT

Abstract: BCW67f BCW66 bss65 BSV62 BCW65A BCW65B BCW65C BCW66F BCW66G
Contextual Info: SOT-23 TABLE 2 -S IL IC O N PLANAR MEDIUM POWER TRANSISTORS Devices in this table are suitable for medium current, medium power sw itching and general purpose applications. Ratings and Characteristics at 25 °C ambient temperature. _ _ _ _ _ V /lavimnm □

SOA05

Abstract: BCV72 BCW32 BCX19 BCX70 BCX71 ti21E 101002H
Contextual Info: S G S-THOMSON 71C D | 7^=1537 □ □ G 4 CH S 1 | D / w2 ùf THOMSON SEMICONDUCTORS general purpose transistors Characteristic» at 2 5 °C Maximum Typ« ratings NPN PNP Pilot VCEO ti21E@ min mW) (V) 200 200 200 200 2(S) 32 32 32 32 32 110 200 420 120 215

BC338N

Abstract: BC328 BC338 2BC328
Contextual Info: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC338. N E K

BC328

Abstract: BC338 2BC338
Contextual Info: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC328. N E K G

BC327

Abstract: BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note
Contextual Info: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25

BCX79-9

Abstract: BF493 BCX78-10 BCX78-7 BCX78-8 BCX78-9 BCX79 BCX79-10 BCX79-7 BCX79-8
Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25*C, Unless Otherwise Specified) Maximum Ratings Type No. BCX78-10 ^ceo ^CEO ^EBO Icao Po (V) Min (V) Min (V) Min (W) (A) 0Tc=25°c 32 32 5 0.625 0.1 (MA) Max hFE @ ' ces ^C8 (V) (ma ) (V)

BC557P

Abstract: 945 MOTHERBOARD CIRCUIT diagram BFS60 mpsa05 ZTX107 ztx304 ZTX337 ZTX338 BC546P BC556P
Contextual Info: PNP GENERAL PURPOSE T A B LE 2 - PN P SILIC O N P LA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

100az

Abstract: BCW65A BCW66F BCW66G BCW66H BCW68F BCW68G BCW68H FMMTA05 FMMTA06
Contextual Info: SOT 23 TRANSISTORS NPN MEDIUM POWER RATINGS AND CHARACTERISTICS at 25°C ambient temperature. Type FM M TA06 V c es Volts VcEO Volts 80 80 lc mA 500 Ptot* mW 350 h FE VcE {sat min/max at Ic /V c e max at Ic /Ib m A/Volts Volts mA 5 0 /- 10/1 Noise Figure at

2N2270

Abstract: 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86
Contextual Info: NPN SWITCHING TABLE 3 NPN SILICON PLANAR M E D IU M AND HIGH SPEED SW ITCHING TRANSISTORS The devices shown in this table are characterised for general medium voltage, medium and high speed switching applications in Commercial, Industrial and Military equipments.

2N3904

Abstract: BC557P BFS98 ZTX452 BFS60 ZTX304 BFS59 MPS6566 ZTX3904 ZTX453
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - NPN SILICON PLANAR GENERAL PURPOSE: TRANSISTORS The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

BC338C

Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

2TX650

Abstract: BFS97 BFS98 ZTX337 ZTX338 ZTX452 MPSA06 MPSA56 ZTX451 ZTX454
Contextual Info: 5bE D m In ? Q S ? ñ 00DbT3T S03 • Z E T B TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1000mW at 25 °C ambient temperature.

bc177

Abstract: BFS98 BFS59 ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and OUTPUT ST A G ES, O SC ILLA TO RS, AND GEN ERAL PURPO SE

marking k4

Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TR A N SISTO R S TR A N SISTO R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW60C BCW60D BCW 61A BCW61B BCW61C BCW61D BCW 65A

BU 808 DX

Abstract: ei50 bu 808 df 3AR 3ER 3FR BB 4130 BC860 BCV26 T3 BCV26 BCV46 BCW29
Contextual Info: /T T SGS-THOMSON SURFACE MOUNT DEVICES Ä 7# U D M iyiC TM Ö tgS GENERAL PURPOSE & INDUSTRIAL PNP GENERAL PURPOSE TRANSISTORS Vc e O 'c ptot hFE 'C LU VcBO O > Type / Iß max VCES* BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 BC 856 A BC 856 B

BF199

Contextual Info: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BCX58-9 Electrical Chatacteristics (Ta=25”C, Unless Otherwise Specified) V C BO ^CEO ^EBO (V) Min (V) Min (V) Min Pd k (W) (A) @Tc=25°( 32 32 7 0.625 0.1 *CBO ^CB ^CES ^C E (PA) 8(V) (|iA) @ (V)

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET — General Purpose Transistor MMBF5457LT1 N—Channel 2 s o u rc e MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating Vd S 25 Vdc Drain-Gate Voltage Vd G 25 Vdc v GS r 25 Vdc Ig 10 mAdc Symbol Max Unit

BFS98

Abstract: ZTX313 ZTX109 ZTX302 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE

BCY65E

Abstract: ZT189 ZT211 ZT86 ZT88 ZT89 ZT90 ZT91 ZT92 ZT93
Contextual Info: NOISE N SILICON PLANAR LOW NOISE TRANSISTORS lown in this table are characterised for low noise, low level amplification and litable for audio pre-amplifiers as well as universal applications. ; are I sted in orderof decreasing Breakdown Voltage I, Pov /er Dissipation P tot r etc.

Contextual Info: ' , > CL146 I ; NPN A F LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR G E N E R A L D E S C R IP T IO N T 0 -9 2 B The CL146 is a NPNsilicon planar epitaxial transistor in plastic package designed for hearing aids, watches, paging systems and other equipment

Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5457LT1 N–Channel 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc VGS r 25 Vdc IG 10 mAdc Reverse Gate–Source Voltage Gate Current

2N2405

Abstract: 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
Contextual Info: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,

GBC327

Abstract: GBC337
Contextual Info: ISSUED DATE :2005/10/21 REVISED DATE : GBC337 NPN SILICON TRANSISTOR Description The GBC337 is designed for drive and output-stages of audio amplifiers. Features High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC327 Package Dimensions D TO-92