BF422 EQUIVALENT
Abstract: equivalent bf422
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN Silicon BF420 BF422 COLLECTOR 2 3 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol BF420 BF422 Unit Collector – Emitter Voltage VCEO 300 250 Vdc Collector – Base Voltage VCBO 300 250 Vdc
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bf420bf422226aabf422 equivalent+1equivalent bf422
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MMBF4856
Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to
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automat218amsc1621t1msc2404msd1819a+15mv1620mv1624mv1636mv1640mv1642mv1644mmbf4856transistor equivalent 2n5551bf245 application notemsc162174ls04 fan out2n3819 equivalent transistormmbf5486lbf245 equivalentmps8093
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transistor equivalent 2n5551
Abstract: bf245 equivalent EQUIVALENT TRANSISTOR bc109c transistor equivalent CT 2n5551 BC237 bc238 equivalent tr bc547 BF422 EQUIVALENT Motorola FETS 3000 series part numbers MPS2369 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5446ARL 1N5448ARL 1N5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges, providing solid–state reliability to replace mechanical tuning methods.
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1n5446arl1n5448arl1n5456amsc1621t1+16msc2404msd1819amv1620mv1624mv1636mv1640transistor equivalent 2n5551bf245 equivalentequivalent transistor bc109ctransistor equivalent ct 2n5551bc237bc238 equivalenttr bc547bf422 equivalentmotorola fets 3000 series part numbersmps2369 equivalent
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MPSa06 equivalent
Abstract: MPSA42 equivalent bf245 equivalent 2N5087 equivalent BC237 bf245a equivalent equivalent components of transistor bc107 2N2222A motorola MPSa56 equivalent EQUIVALENT TRANSISTOR bc109c
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Switching Diode BAS16WT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA
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bas16wt170/sotrj218amsc1621t1+16msc2404msd1819amv1620mv1624mv1636mv1640mpsa06 equivalentmpsa42 equivalentbf245 equivalent2n5087 equivalentbc237bf245a equivalentequivalent components of transistor bc1072n2222a motorolampsa56 equivalentequivalent transistor bc109c
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transistor equivalent 2n5551
Abstract: bf245 equivalent transistor equivalent book 2N5401 J-FET 2N3819 MMBF4856LT1 MIL-STD-750 method 1037 BC237 2N5551 equivalent MPS3640 equivalent MOTOROLA 2n2222 TRANSISTOR
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P–Channel MMBF5460LT1 2 SOURCE 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1 TA = 25°C
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mmbf5460lt1236abcharacteris218amsc1621t1+15msc2404msd1819amv1620mv1624mv1636transistor equivalent 2n5551bf245 equivalenttransistor equivalent book 2n5401j-fet 2n3819mmbf4856lt1mil-std-750 method 1037bc2372n5551 equivalentmps3640 equivalentmotorola 2n2222 transistor
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2n1613 equivalent
Abstract: BC237 diode l 0607
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection
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sc-70/sot-323bav99wt1bav99lt1bav99rwt1+8msc1621t1msc2404msd1819amv1620mv16242n1613 equivalentbc237diode l 0607
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transistor equivalent CT 2n5551
Abstract: EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter 1N5148
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5148 1N5148A Designed for electronic tuning and harmonic–generation applications, and provide solid–state reliability to replace mechanical tuning methods. • Guaranteed High–Frequency Q
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1n51481n5148amsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642transistor equivalent ct 2n5551equivalent transistor bc109cbc237bc238 h parameter
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2n3819 replacement
Abstract: transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical
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mmbv2101lt1mmbv2103lt1mmbv2105lt1mmbv2107lt1+16mmbv2108lt1mmbv2109lt1mv2101mv2104mv2105mv21082n3819 replacementtransistor equivalent book 2n5401bc237mps918 equivalentmps2907 replacement2n3819 equivalent transistorbf245 replacement2n5551 sot-23transistor equivalent ct 2n5551j305 replacement
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MMBF4856
Abstract: BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3906 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage
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mpq3906therm218amsc1621t1msc2404+12msd1819amv1620mv1624mv1636mv1640mv1642mmbf4856bc237bf244bc177 pnp transistorbf245 motorolammbt8599l
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2n5462 replacement
Abstract: motorola JFET 2N3819 bf245 equivalent transistor equivalent 2n5551 2N5461 replacement transistor equivalent book 2N5401 BC237 EQUIVALENT TRANSISTOR bc109c 2N2222, 2N2222A J-FET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers P–Channel — Depletion 2N5460 2N5461 2N5462 2 DRAIN 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IG f 10 mAdc Total Device Dissipation @ TA = 25°C
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2n54602n54612n5462226aa+16v218amsc1621t1msc2404msd1819amv1620mv16242n5462 replacementmotorola jfet 2n3819bf245 equivalenttransistor equivalent 2n55512n5461 replacementtransistor equivalent book 2n5401bc237equivalent transistor bc109c2n2222, 2n2222aj-fet 2n3819
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bf244
Abstract: MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion J304 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 30 Vdc Gate–Source Voltage
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226aamsc1621t1msc2404msd1819a+16mv1620mv1624mv1636mv1640mv1642mv1644bf244mv211bf256bc2372n2222a to-92mps6568bc547 equivalentbc308bf246motorola jfet 2n3819
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WT transistor
Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc
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mmbf5484lt1236abc218amsc1621t1+15msc2404msd1819amv1620mv1624mv1636mv1640wt transistorbc237s11s2n441bf244b2n3799jfet bf245c4 sot-3232n3819 motorola
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BC237
Abstract: BC109C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3904 NPN Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 NPN 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage
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mpq3904r218amsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv1642bc237bc109c
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Switching N–Channel — Depletion 2N5555 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS 25 Vdc
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2n5555226aamsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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MPF102 equivalent transistor
Abstract: mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N–Channel — Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS – 25
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mpf102226aamsc1621t1msc2404+16msd1819amv1620mv1624mv1636mv1640mv1642mpf102 equivalent transistormpf102 replacementbc237mpf102 modelmpf102 transistor2n1893 equivalentreplacement of mpf102 jfet2n3019 and applicationsbss89 applicationmpf102 application note
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2N3906 MOTOROLA
Abstract: 2n3906 REPLACEMENT 2n3906 TRANSISTOR REPLACEMENT BC237 equivalent transistor 2N1711 2N3905 Equivalent 2N1893 equivalent applications of Transistor BC108 BC141 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage
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2n39052n3906226aaresist218a+15msc1621t1msc2404msd1819amv1620mv1624mv16362n3906 motorola2n3906 replacement2n3906 transistor replacementbc237equivalent transistor 2n17112n3905 equivalent2n1893 equivalentapplications of transistor bc108bc141 equivalent
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BC237
Abstract: S11S C4 SOT-323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc
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mmbf4416lt1236abcha218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636bc237s11sc4 sot-323
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BC237
Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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mmbd1000lt1mmbd2000t1mmbd3000t1mmsd1000t1+7ot-23o-236abv218amsc1621t1msc2404bc237mpsa06 346
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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mmbd1010lt1mmbd2010t1mmbd3010t1s218a+9msc1621t1msc2404msd1819amv1620mv16242n643bc237marking dp sot-363do204aa
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BC237
Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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mmbd1005lt1mmbd2005t1mmbd3005t1msc1621t1+6msc2404msd1819amv1620mv1624mv1636bc237
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BF245 application note
Abstract: transistor BF245 2n4036 equivalent BC237 H.P. Part Numbers to JEDEC Numbers 2N4036 2N3819 Application Note BF245 TRANSISTOR SOT-363 X3 SOT 363 marking CODE m4 6 21 X2 marking code sot 363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBD110DWT1 MBD330DWT1 MBD770DWT1 Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies
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mbd110dwt1mbd330dwt1mbd770dwt1so218a+16msc1621t1msc2404msd1819amv1620mv1624mv1636bf245 application notetransistor bf2452n4036 equivalentbc237h.p. part numbers to jedec numbers 2n40362n3819 application notebf245 transistorsot-363 x3sot 363 marking code m46 21 x2 marking code sot 363
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2N301
Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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mmbd1005lt1mmbd2005t1mmbd3005t1msc1621t1+10msc2404msd1819amv1620mv1624mv16362n301bc2375111 sot-23bc547 sot package sot-232n5670 equivalent
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BC237
Abstract: TRANSISTOR bc177b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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baw156lt1baw156lt3inch/10236ab+7junc218amsc1621t1msc2404msd1819amv1620bc237transistor bc177b
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motorola 5118 user manual
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2837LT1 MMBD2838LT1 ANODE 1 3 CATHODE 2 ANODE 3 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit VRM 75 Vdc VR 30 50 Vdc IFM 450 300 mAdc IO 150 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)
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mmbd2837lt1mmbd2838lt1236abmsc1621t1+6msc2404msd1819amv1620mv1624motorola 5118 user manualbc237
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