ELPIDA GDDR3 Search Results

EDE2116ACBG

Abstract: EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F
Contextual Info: SELECTION GUIDE DRAM Selection Guide Document No. E1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM Selection Guide CONTENTS 1. DDR3

GDDR5

Abstract: Elpida GDDR5 GDDR5 pcb layout BGA-78 gddr5 controller E1600E10 GDDR5 layout Elpida GDDR3 GDDR5 application note POD-15
Contextual Info: USER’S MANUAL Introduction To GDDR5 SGRAM Document No. E1600E10 Ver. 1.0 Date Published March 2010 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 INTRODUCTION Intended Audience This manual is intended for users who design application systems using Graphics Double Data Rate 5 (GDDR5) Synchronous

EDJ2116DASE

Abstract: EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG
Contextual Info: セレクションガイド DRAM セレクションガイド Document No. J1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM セレクションガイド 目 次 1. DDR3

Rambus XDR

Abstract: DDR3-1333 XDR Rambus DDR2 x32 ELPIDA DDR3 XDR DRAM DDR2-667 DDR2-800 DDR333 DDR400
Contextual Info: XDR DRAM Industry demand for memory bandwidth in next-generation digital consumer electronics, such as high-definition digital television, home servers and high-end 3-D graphics applications, is growing rapidly as more content becomes available and as processor performance becomes more robust.

RFU20

Abstract: G72M sc413 BLM18PG181SN1D nvidia g72m 7SH02 nvidia MXM MXM CONNECTOR G72M-V quanta computer
Contextual Info: 5 4 D 3 2 CH-A NVIDIA PCI-E x16 CH-B FCBGA 820pin MXM CONNECTOR D VRAM GDDR3 8Mx32 16Mx32 Page8 Channel C is available on G73M only CRT C VRAM GDDR3 8Mx32 16Mx32 Page7 G72M G73M TV 1 C LVDS Page3 ~ 6 2.5V B B 3.3V Page2 VIN VCORE VRM VCORE 1.8V VRM 1.8V Page9

DDR3-1333

Abstract: DDR2-1066 ASIC XDR Rambus 104-FBGA DDR2-667 DDR2-800 DDR333 DDR400 ddr3 1333
Contextual Info: XDR DRAM 最新の高性能グラフィックスや高画質HDTV対応のホームサーバなど、先端の3D画像や高精細なデジタル 画像を扱うデジタル家電市場で、膨大なデータを瞬時に処理できるメモリの需要が高まっています。

Qualcomm MSM7225

Abstract: GTM382 LTN121AT01-1 TS-L633 MSM7225 samsung dl6 TCC3110 NVIDIA geforce 5200 WD3200BEVT LTN121W1-L03
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 2. Introduction and Specification 2-1. Instroduction High Performance Note PC     High Performance with Intel Core 2 Duo Processor and DDR II Memory

DDR2 x32

Abstract: GC14 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.0 January 2004 Samsung Electronics reserves the right to change products or specification without notice.

DDR2 x32

Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.

K4J55323QF-GC20

Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 gddr3 Gl WL02 A/SAMSUNG GDDR3
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM Revision 1.8 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4J55323QF-GC20

Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 DDR2 x32 ELPIDA ddr2 RAM
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.3 June 2004 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.2 February 2004 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4 / Apr. 2004

ELPIDA DDR User

Contextual Info: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004

HY5RS573225AFP-14

Abstract: 11mmx14mm HY5RS573225AFP-16 136ball HY5RS573225AFP HY5RS573225AFP-12 hynix gddr3 hy5rs573225afp-11
Contextual Info: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

136ball

Abstract: HY5RS573225AFP2 HY5RS573225AFP samsung k9 derating HY5RS573225AFP-11
Contextual Info: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5RS573225F

Abstract: HY5RS573225F-12 HY5RS573225F-13 HY5RS573225F-14 HY5RS573225F-15 HY5RS573225F-16 HY5RS573225F-18 HY5RS573225F-20 ELPIDA DDR User
Contextual Info: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004

HY5RS123235

Abstract: ELPIDA DDR User BA2-H10
Contextual Info: HY5RS123235F 512M 16Mx32 GDDR3 SDRAM HY5RS123235F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5RS573225FP-2

Contextual Info: HY5RS573225F P 256M (8Mx32) GDDR3 SDRAM HY5RS573225F(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5RS573225F

Abstract: HY5RS573225F-12 HY5RS573225F-13 HY5RS573225F-14 HY5RS573225F-15 HY5RS573225F-16 1600-Mbps
Contextual Info: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5RS573225FP-2

Abstract: winbond HY5RS573225F DQ243 HY5RS573225FP POD18
Contextual Info: HY5RS573225F P 256M (8Mx32) GDDR3 SDRAM HY5RS573225F(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.